19,867 research outputs found

    Dynamics of oppositely charged emulsion droplets

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    Retaining Expression on De-identified Faces

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    © Springer International Publishing AG 2017The extensive use of video surveillance along with advances in face recognition has ignited concerns about the privacy of the people identifiable in the recorded documents. A face de-identification algorithm, named k-Same, has been proposed by prior research and guarantees to thwart face recognition software. However, like many previous attempts in face de-identification, kSame fails to preserve the utility such as gender and expression of the original data. To overcome this, a new algorithm is proposed here to preserve data utility as well as protect privacy. In terms of utility preservation, this new algorithm is capable of preserving not only the category of the facial expression (e.g., happy or sad) but also the intensity of the expression. This new algorithm for face de-identification possesses a great potential especially with real-world images and videos as each facial expression in real life is a continuous motion consisting of images of the same expression with various degrees of intensity.Peer reviewe

    Electron transport and band structure in phosphorus-doped polycrystalline silicon films

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    We study transport mechanisms, effective mass, and band structure by measuring the resistivity, Hall, and Seebeck and Nernst coefficients in heavily phosphorus-doped polycrystalline silicon films made by thermal crystallization of amorphous silicon. We observe a change in transport mechanism which results in an increase in electron mobility from 10% to 80% of the single-crystal silicon mobility as the carrier concentration increases from 1019 to 1020 cm-3. Our measurements of effective mass at the Fermi level indicate that as the carrier concentration increases, there is a shift from impurity-band transport to conduction-band transport, and that the electron effective mass is lower in the impurity band than in the conduction band of Si. The shift to conduction-band transport improves electron mobility with carrier density by improving intragrain carrier mean free path lengths and relaxation times. © 2009 American Institute of Physics.published_or_final_versio

    Logarithmic rate dependence in deforming granular materials

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    Rate-independence for stresses within a granular material is a basic tenet of many models for slow dense granular flows. By contrast, logarithmic rate dependence of stresses is found in solid-on-solid friction, in geological settings, and elsewhere. In this work, we show that logarithmic rate-dependence occurs in granular materials for plastic (irreversible) deformations that occur during shearing but not for elastic (reversible) deformations, such as those that occur under moderate repetitive compression. Increasing the shearing rate, \Omega, leads to an increase in the stress and the stress fluctuations that at least qualitatively resemble what occurs due to an increase in the density. Increases in \Omega also lead to qualitative changes in the distributions of stress build-up and relaxation events. If shearing is stopped at t=0, stress relaxations occur with \sigma(t)/ \sigma(t=0) \simeq A \log(t/t_0). This collective relaxation of the stress network over logarithmically long times provides a mechanism for rate-dependent strengthening.Comment: 4 pages, 5 figures. RevTeX
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