52,238 research outputs found

    Asymptotic freedom in a scalar field theory on the lattice

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    An alternative model to the trivial Ï•4\phi^4-theory of the standard model of weak interactions is suggested, which embodies the Higgs-mechanism, but is free of the conceptual problems of standard Ï•4\phi ^4-theory. We propose a N-component, O(N)-symmetric scalar field theory, which is originally defined on the lattice. The model can be motivated from SU(2) gauge theory. Thereby the scalar field arises as a gauge invariant degree of freedom. The scalar lattice model is analytically solved in the large N limit. The continuum limit is approached via an asymptotically free scaling. The renormalized theory evades triviality, and furthermore gives rise to a dynamically formed mass of the scalar particle.Comment: 10 pages, LaTeX, one figure and a motivation for the particular type of action adde

    Low-lying ud anti-s anti-s configurations in a non-relativistic constituent quark model

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    The energies of the low-lying isoscalar and isovector ud anti-s anti-s configurations with spin-parity J^P=0^+, 1^+, and 2^+ are calculated in a non-relativistic constituent quark model by use of the variational method. The contributions of various parts of the quark-quark interacting potentials including the s-channel interaction are investigated, and the effect of different forms of confinement potential is examined. The model parameters are determined by the same method as in our previous work, and they still can satisfactorily describe the nucleon-nucleon scattering phase shifts and the hyperon-nucleon cross sections. The parameters of the s-channel interaction are fixed by the masses of K and K^* mesons, for which the size parameter is taken to be two possible values. When it is chosen as the same as baryons', the numerical results show that the masses of all the ud anti-s anti-s configurations are higher than the corresponding meson-meson thresholds. But when the size parameter for the K and K^* mesons is adjusted to be smaller than that for the baryons, the ud anti-s anti-s configuration with I=0 and J^P=1^+ is found to lie lower than the K^*K^* threshold, furthermore, this state has a very small KK^* component and the interaction matrix elements between this state and KK^* is comparatively small, thus its coupling to the KK^* channel will consequently be weak and it might be regarded as a possible tetraquark candidate.Comment: 17 pages, 1 figur

    Quantum Manifestations of Graphene Edge Stress and Edge Instability: A First-Principles Study

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    We have performed first-principles calculations of graphene edge stresses, which display two interesting quantum manifestations absent from the classical interpretation: the armchair edge stress oscillates with a nanoribbon width, and the zigzag edge stress is noticeably reduced by spin polarization. Such quantum stress effects in turn manifest in mechanical edge twisting and warping instability, showing features not captured by empirical potentials or continuum theory. Edge adsorption of H and Stone-Wales reconstruction are shown to provide alternative mechanisms in relieving the edge compression and hence to stabilize the planar edge structure.Comment: 5figure

    In Situ Structure Characterization in Slot-Die-Printed All-Polymer Solar Cells with Efficiency Over 9%

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    Herein, high-performance printed all-polymer solar cells (all-PSCs) based on a bulk-heterojunction (BHJ) blend film are demonstrated using PTzBI as the donor and N2200 as the acceptor. A slot-die process is used to prepare the BHJ blend, which is a cost-effective, high-throughput approach to achieve large-area photovoltaic devices. The real-time crystallization of polymers in the film drying process is investigated by in situ grazing incidence wide-angle X-ray scattering characterization. Printing is found to significantly improve the crystallinity of the polymer blend in comparison with spin coating. Moreover, printing with 1,8-diiodooctane as the solvent additive enhances the polymer aggregation and crystallization during solvent evaporation, eventually leading to multi-length-scale phase separation, with PTzBI-rich domains in-between the N2200 crystalline fibers. This unique morphology achieved by printing fabrication results in an impressively high power conversion efficiency of 9.10%, which is the highest efficiency reported for printed all-PSCs. These findings provide important guidelines for controlling film drying dynamics for processing all-PSCs

    Arbitrary-order Hilbert spectral analysis for time series possessing scaling statistics: a comparison study with detrended fluctuation analysis and wavelet leaders

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    In this paper we present an extended version of Hilbert-Huang transform, namely arbitrary-order Hilbert spectral analysis, to characterize the scale-invariant properties of a time series directly in an amplitude-frequency space. We first show numerically that due to a nonlinear distortion, traditional methods require high-order harmonic components to represent nonlinear processes, except for the Hilbert-based method. This will lead to an artificial energy flux from the low-frequency (large scale) to the high-frequency (small scale) part. Thus the power law, if it exists, is contaminated. We then compare the Hilbert method with structure functions (SF), detrended fluctuation analysis (DFA), and wavelet leader (WL) by analyzing fractional Brownian motion and synthesized multifractal time series. For the former simulation, we find that all methods provide comparable results. For the latter simulation, we perform simulations with an intermittent parameter {\mu} = 0.15. We find that the SF underestimates scaling exponent when q > 3. The Hilbert method provides a slight underestimation when q > 5. However, both DFA and WL overestimate the scaling exponents when q > 5. It seems that Hilbert and DFA methods provide better singularity spectra than SF and WL. We finally apply all methods to a passive scalar (temperature) data obtained from a jet experiment with a Taylor's microscale Reynolds number Relambda \simeq 250. Due to the presence of strong ramp-cliff structures, the SF fails to detect the power law behavior. For the traditional method, the ramp-cliff structure causes a serious artificial energy flux from the low-frequency (large scale) to the high-frequency (small scale) part. Thus DFA and WL underestimate the scaling exponents. However, the Hilbert method provides scaling exponents {\xi}{\theta}(q) quite close to the one for longitudinal velocity.Comment: 13 pages, 10 figure

    A novel MONOS memory with high-κ HfLaON as charge-storage layer

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    MIS capacitors with a high-κ HfLaON or HfLaO gate dielectric are fabricated by using a reactive sputtering method to investigate the applicability of the films as a novel charge-storage layer in a metaloxidenitrideoxidesilicon nonvolatile memory device. Experimental results indicate that the MIS capacitor with a HfLaON gate dielectric exhibits a large memory window, high program/erase speed, excellent endurance property, and reasonable retention. The involved mechanisms for these promising characteristics with HfLaON are thought to be in part from nitrogen incorporation leading to higher density of traps with deeper levels and, thus, higher trapping efficiency, stronger HfN and LaN bonds, and more stable atomic structure and HfLaONSiO 2 interface, as compared to the HfLaO dielectric. © 2011 IEEE.published_or_final_versio

    High-temperature electrical and thermal transport properties of fully filled skutterudites RFe_(4)Sb_(12) (R = Ca, Sr, Ba, La, Ce, Pr, Nd, Eu, and Yb)

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    Fully filled skutterudites RFe_(4)Sb_(12) (R = Ca, Sr, Ba, La, Ce, Pr, Nd, Eu, and Yb) have been prepared and the high-temperature electrical and thermal transport properties are investigated systematically. Lattice constants of RFe_(4)Sb_(12) increase almost linearly with increasing the ionic radii of the fillers, while the lattice expansion in filled structure is weakly influenced by the filler valence charge states. Using simple charge counting, the hole concentration in RFe_(4)Sb_(12) with divalent fillers (R = Ca, Sr, Ba, Eu, and Yb) is much higher than that in RFe4Sb12 with trivalent fillers (R = La, Ce, Pr, and Nd), resulting in relatively high electrical conductivity and low Seebeck coefficient. It is also found that RFe_(4)Sb_(12) filled skutterudites having similar filler valence charge states exhibit comparable electrical conductivity and Seebeck coefficient, and the behavior of the temperature dependence, thereby leading to comparable power factor values in the temperature range from 300 to 800 K. All RFe_(4)Sb_(12) samples possess low lattice thermal conductivity. The correlation between the lattice thermal resistivity WL and ionic radii of the fillers is discussed and a good relationship of W_L ~ (r_(cage)−r_(ion))^3 is observed in lanthanide metal filled skutterudites. CeFe_(4)Sb_(12), PrFe_(4)Sb_(12), and NdFe_(4)Sb_(12) show the highest thermoelectric figure of merit around 0.87 at 750 K among all the filled skutterudites studied in this work
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