Electronic noise in charge sensitive preamplifiers for X-ray spectroscopy and the benefits of a SiC input JFET

A comprehensive summary and analysis of the electronic noise affecting the resolution of X-ray, γ-ray and particle counting spectroscopic systems which employ semiconductor detectors and charge sensitive preamplifiers is presented. The noise arising from the input transistor of the preamplifier and its contribution to the total noise is examined. A model for computing the noise arising from the front-end transistor is also presented and theoretical calculations comparing the noise contribution of transistors made of different materials are discussed, emphasizing the advantages of wide bandgap transistor technology

Characterization of room temperature AlGaAs soft X-ray mesa photodiodes

Results characterising a set of nine prototype Al0.8Ga0.2As p+–i–n+ mesa photodiodes (400 µm diameter, 1.7 µm i layer) are presented. The results show the performance of the devices as room temperature spectroscopic photon counting soft X-ray detectors. The responses of the photodiodes to illumination with an 55Fe radioisotope X-ray source were measured using a low noise charge sensitive preamplifier; the energy resolutions measured with the devices were consistent with each other and had a mean FWHM at 5.9 keV of 1.27 keV. The devices are the thickest (highest detection efficiency) AlGaAs X-ray spectroscopic mesa photodiodes reported in the literature to date. They also have better energy resolution than all previously reported non-avalanche AlGaAs X-ray detectors of the same area

X-ray spectrometer with a low-cost SiC photodiode

A low-cost Commercial-Off-The-Shelf (COTS) 4H-SiC 0.06 mm2 UV p-n photodiode was coupled to a low-noise charge-sensitive preamplifier and used as photon counting X-ray spectrometer. The photodiode/spectrometer was investigated at X-ray energies from 4.95 keV to 21.17 keV: a Mo cathode X-ray tube was used to fluoresce eight high-purity metal foils to produce characteristic X-ray emission lines which were used to characterise the instrument. The energy resolution (full width at half maximum, FWHM ) of the spectrometer was found to be 1.6 keV to 1.8 keV, across the energy range. The energy linearity of the detector/spectrometer (i.e. the detector’s charge output per photon as a function of incident photon energy across the 4.95 keV to 21.17 keV energy range), as well as the count rate linearity of the detector/spectrometer (i.e. number of detected photons as a function of photon fluence at a specific energy) were investigated. The energy linearity of the detector/spectrometer was linear with an error <± 0.7 %; the count rate linearity of the detector/spectrometer was linear with an error <± 2 %. The use of COTS SiC photodiodes as detectors for X-ray spectrometers is attractive for nanosatellite/CubeSat applications (including solar flare monitoring), and for cost sensitive industrial uses

Temperature dependence of commercial 4H-SiC UV Schottky photodiodes for X-ray detection and spectroscopy

Two commercial-off-the-shelf (COTS) 4H-SiC UV photodiodes have been investigated for their suitability as low-cost high temperature tolerant X-ray detectors. Electrical characterisation of the photodiodes which had different active areas (0.06 mm² and 0.5 mm²) is reported over the temperature range 0 °C to 140 °C together with measurements of the X-ray photocurrents generated when the detectors were illuminated with an 55Fe radioisotope X-ray source. The 0.06 mm² photodiode was also investigated as a photon counting spectroscopic X-ray detector across the temperature range 0 °C to 100 °C. The depletion widths (at 120 V reverse bias) of the two diodes were found to be 2.3 µm and 4.5 µm, for the 0.06 mm² and 0.5 mm² detectors respectively, at 140 °C. Both devices had low leakage currents (<10 pA) at temperatures ≤40 °C even at high electric field strengths (500 kV/cm for 0.06 mm² diode; 267 kV/cm for 0.5 mm² diode). At 140 °C and similar field strengths (514 kV/cm for 0.06 mm² diode; 269 kV/cm for 0.5 mm2 diode), the leakage currents of both diodes were <2 nA (corresponding to leakage current densities of 2.4 µA/cm² and 0.3 µA/cm² for each diode respectively). The results demonstrated that both devices could function as current mode detectors of soft X-rays at the temperatures <80 °C and that when coupled to a low noise charge sensitive preamplifier, the smaller diode functioned as a photon counting spectroscopic X-ray detector at temperatures ≤100 °C with modest energy resolution (1.6 keV FWHM at 5.9 keV at 0 °C; 2.6 keV FWHM at 5.9 keV at 100 °C). Due to their temperature tolerance, wide commercial availability, and the radiation hardness of SiC, such detectors are expected to find utility in future low-cost nanosatellite (cubesat) missions and cost-sensitive industrial applications

Temperature effects on gallium arsenide 63Ni betavoltaic cell

A GaAs 63Ni radioisotope betavoltaic cell is reported over the temperature range 70 °C to −20 °C. The temperature effects on the key cell parameters were investigated. The saturation current decreased with decreased temperature; whilst the open circuit voltage, the short circuit current, the maximum power and the internal conversion efficiency values decreased with increased temperature. A maximum output power and an internal conversion efficiency of 1.8 pW (corresponding to 0.3 μW/Ci) and 7% were observed at −20 °C, respectively

Electron spectroscopy with a diamond detector

An electronic grade single crystal chemical vapour deposition diamond was investigated as a prototype high temperature spectroscopic electron (β− particle) detector for future space science instruments. The diamond detector was coupled to a custom-built charge-sensitive preamplifier of low noise. A63Ni radioisotope source (endpoint energy 66 keV) was used to provide a spectrum of β− particles incident on the detector. The operating temperature of the detector/preamplifier assembly was controlled to allow its performance to be investigated between +100 °C and −20 °C, in 20 °C steps. Monte Carlo modelling was used to: a) calculate the β− particle spectrum incident on the detector; b) calculate the fraction of β− particle energy deposited into the detector; and c) predict the β− particle spectrum accumulated by the instrument. Comparison between the model and experimental data suggested that there was a 4.5 μm thick recombination region at the front of the detector. The spectrometer was demonstrated to be fully operable at temperatures, T, −20 °C ≤ T ≤ 80 °C; the results suggested that some form of polarisation phenomenon occurred in the detector at > 80 °C. This article presents the first report of an energy calibrated (≲ 50 keV) spectroscopic β− particle diamond detector

Energy response characterization of InGaP X-ray detectors

Two custom-made In0.5Ga0.5P p+-i-n+ circular mesa spectroscopic X-ray photodiodes with different diameters (200 μm and 400 μm) and a 5 μm i layer have been characterized for their response to X-ray photons within the energy range 4.95 keV to 21.17 keV. The photodiodes, operating uncooled at 30 °C, were coupled, in turn, to the same custom-made charge-sensitive preamplifier. X-ray fluorescence spectra of high-purity calibration foils excited by a Mo target X-ray tube were accumulated. The energy resolution (Full Width at Half Maximum) increased from 0.79 keV ± 0.02 keV at 4.95 keV to 0.83 keV ± 0.02 keV at 21.17 keV, and from 1.12 keV ± 0.02 keV at 4.95 keV to 1.15 keV ± 0.02 keV at 21.17 keV, when using the 200 μm and 400 μm diameter devices, respectively. Energy resolution broadening with increasing energy was attributed to increasing Fano noise (negligible incomplete charge collection noise was suggested); for the first time the Fano factor for In0.5Ga0.5P was experimentally determined to be 0.13, suggesting a Fano limited energy resolution of 145 eV at 5.9 keV. The charge output of each system had a linear relationship with photon energy, across the investigated energy range. The count rate of both spectroscopic systems increased linearly with varying X-ray tube current up to ~105 photons s-1 cm-2 incident photon fluences. The development of In0.5Ga0.5P based spectrometers is particularly important for hard X-/γ-ray astronomy, due to the material’s large linear X-ray and γ-ray absorption coefficients and ability to operate uncooled at high temperatures

Gallium arsenide 55Fe X-ray-photovoltaic battery

The effects of temperature on the key parameters of a prototype GaAs 55Fe radioisotope X-ray microbattery were studied over the temperature range -20 °C to 70 °C. A p-i-n GaAs structure was used to collect the photons from a 254 Bq 55Fe radioisotope X-ray source. Experimental results showed that the open circuit voltage and the short circuit current decreased with increased temperature. The maximum output power and the conversion efficiency of the device decreased at higher temperatures. For the reported microbattery, the highest maximum output power (1 pW, corresponding to 0.4 μW/Ci) was observed at -20 °C. A conversion efficiency of 9% was measured at -20 °C

The response of thick (10 μm) AlInP x-ray and γ-ray detectors at up to 88 keV

The development of new x-ray and γ-ray spectrometers based on AlInP photodiodes with increased quantum detection efficiency and improved energy resolution is reported. The spectroscopic responses of two AlInP p+-i-n+ mesa photodiodes (10 μm i layer, the thickest so far reported) were investigated at photon energies from 4.95 to 88.03 keV; the detectors and preamplifier were operated at 30 °C. Energy resolutions (full width at half maximum) of 750 ± 40 eV and 850 ± 30 eV at 4.95 keV were achieved with the two detectors. The energy resolution deteriorated with increasing photon energy; this was in accordance with the increasing Fano noise with energy and suggested negligible incomplete charge collection noise across the photon energy range investigated. The measured voltage output of each spectrometer was found to be linear as a function of incident x-ray photon energy. The count rate (measured at 8.63 keV) was also found to linearly increase with incoming x-ray photon flux for the investigated spectrometers. These results, which were obtained using the thickest AlInP photodiodes produced so far, suggest that AlInP detectors are highly promising candidates for future uncooled x-ray and γ-ray spectrometers

Al0.2Ga0.8As 2 × 2 square pixel X-ray photodiode array

A monolithic 2 × 2 square pixel Al0.2Ga0.8As p+-i-n+ mesa X-ray photodiode array (each photodiode area 200 µm by 200 µm, 3 µm i layer) has been fabricated from material grown by MOVPE. The array was electrically characterised across the temperature range 100 °C to -20 °C. Each pixel’s response to illumination with soft X rays from an 55Fe radioisotope X-ray source (Mn Kα = 5.9 keV; Mn Kβ = 6.49 keV) was investigated across the temperature range 30 °C to -20 °C. The best energy resolution (FWHM at 5.9 keV) achieved at 20 °C was 0.76 keV ± 0.06 keV (with 30 V reverse bias applied to the detector). The measured energy resolution is the best so far reported for AlGaAs X-ray photodiodes at 20 °C. It is also the first time a small AlGaAs X-ray photodiode array has been demonstrated. Due to the temperature tolerance and the radiation hardness of AlGaAs, such detectors are expected to find utility in future space science missions exposed to intense radiation environments, for example missions to study the Jovian or Saturnian aurorae and high temperature planetary surfaces