3,299 research outputs found

    Gate Coupling to Nanoscale Electronics

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    The realization of single-molecule electronic devices, in which a nanometer-scale molecule is connected to macroscopic leads, requires the reproducible production of highly ordered nanoscale gaps in which a molecule of interest is electrostatically coupled to nearby gate electrodes. Understanding how the molecule-gate coupling depends on key parameters is crucial for the development of high-performance devices. Here we directly address this, presenting two- and three-dimensional finite-element electrostatic simulations of the electrode geometries formed using emerging fabrication techniques. We quantify the gate coupling intrinsic to these devices, exploring the roles of parameters believed to be relevant to such devices. These include the thickness and nature of the dielectric used, and the gate screening due to different device geometries. On the single-molecule (~1nm) scale, we find that device geometry plays a greater role in the gate coupling than the dielectric constant or the thickness of the insulator. Compared to the typical uniform nanogap electrode geometry envisioned, we find that non-uniform tapered electrodes yield a significant three orders of magnitude improvement in gate coupling. We also find that in the tapered geometry the polarizability of a molecular channel works to enhance the gate coupling

    Effects of magnetic field and disorder on electronic properties of Carbon Nanotubes

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    Electronic properties of metallic and semiconducting carbon nanotubes are investigated in presence of magnetic field perpendicular to the CN-axis, and disorder introduced through energy site randomness. The magnetic field field is shown to induce a metal-insulator transition (MIT) in absence of disorder, and surprisingly disorder does not affect significantly the MIT. These results may find confirmation through tunneling experimentsComment: 4 pages, 6 figures. Phys. Rev. B (in press

    Self-directed growth of AlGaAs core-shell nanowires for visible light applications

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    Al(0.37)Ga(0.63)As nanowires (NWs) were grown in a molecular beam epitaxy system on GaAs(111)B substrates. Micro-photoluminescence measurements and energy dispersive X-ray spectroscopy indicated a core-shell structure and Al composition gradient along the NW axis, producing a potential minimum for carrier confinement. The core-shell structure formed during the growth as a consequence of the different Al and Ga adatom diffusion lengths.Comment: 20 pages, 7 figure

    Coulomb Gap and Correlated Vortex Pinning in Superconductors

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    The positions of columnar pins and magnetic flux lines determined from a decoration experiment on BSCCO were used to calculate the single--particle density of states at low temperatures in the Bose glass phase. A wide Coulomb gap is found, with gap exponent s≈1.2s \approx 1.2, as a result of the long--range interaction between the vortices. As a consequence, the variable--range hopping transport of flux lines is considerably reduced with respect to the non--interacting case, the effective Mott exponent being enhanced from p0=1/3p_0 = 1/3 to peff≈0.5p_{\rm eff} \approx 0.5 for this specific experiment.Comment: 10 pages, Revtex, 4 figures appended as uu-encoded postscript files, also available as hardcopies from [email protected]

    Electrically Driven Light Emission from Individual CdSe Nanowires

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    We report electroluminescence (EL) measurements carried out on three-terminal devices incorporating individual n-type CdSe nanowires. Simultaneous optical and electrical measurements reveal that EL occurs near the contact between the nanowire and a positively biased electrode or drain. The surface potential profile, obtained by using Kelvin probe microscopy, shows an abrupt potential drop near the position of the EL spot, while the band profile obtained from scanning photocurrent microscopy indicates the existence of an n-type Schottky barrier at the interface. These observations indicate that light emission occurs through a hole leakage or an inelastic scattering induced by the rapid potential drop at the nanowire-electrode interface.Comment: 12 pages, 4 figure

    Giga-Hertz quantized charge pumping in bottom gate defined InAs nanowire quantum dots

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    Semiconducting nanowires (NWs) are a versatile, highly tunable material platform at the heart of many new developments in nanoscale and quantum physics. Here, we demonstrate charge pumping, i.e., the controlled transport of individual electrons through an InAs NW quantum dot (QD) device at frequencies up to 1.3 1.3\,GHz. The QD is induced electrostatically in the NW by a series of local bottom gates in a state of the art device geometry. A periodic modulation of a single gate is enough to obtain a dc current proportional to the frequency of the modulation. The dc bias, the modulation amplitude and the gate voltages on the local gates can be used to control the number of charges conveyed per cycle. Charge pumping in InAs NWs is relevant not only in metrology as a current standard, but also opens up the opportunity to investigate a variety of exotic states of matter, e.g. Majorana modes, by single electron spectroscopy and correlation experiments.Comment: 21 page
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