Characterization of heavy metal concentrations in the sediments of three freshwater rivers in Huludao City, Northeast China

Wuli River, Cishan River, and Lianshan River are three freshwater rivers flowing through Huludao City, in a region of northeast China strongly affected by industrialization. Contamination assessment has never been conducted in a comprehensive way. For the first time, the contamination of three rivers impacted by different sources in the same city was compared. This work investigated the distribution and sources of Hg, Ph, Cd, Zn and Cu in the surface sediments of Wuli River, Cishan River, and Lianshan River, and assessed heavy metal toxicity risk with the application of two different sets of Sediment Quality Guideline (SQG) indices (effect range low/effect range median values, ERL/ERM; and threshold effect level/probable effect level, TEL/PEL). Furthermore, this study used a toxic unit approach to compare and gauge the individual and combined metal contamination for Hg, Pb, Cd, Zn and Cu. Results showed that Hg contamination in the sediments of Wuli River originated from previous sediment contamination of the chlor-alkali producing industry, and Ph, Cd, Zn and Cu contamination was mainly derived from atmospheric deposition and unknown small pollution sources. Heavy metal contamination to Cishan River sediments was mainly derived from Huludao Zinc Plant, while atmospheric deposition, sewage wastewater and unknown small pollution were the primary sources for Lianshan River. The potential acute toxicity in sediment of Wuli River may be primarily due to Hg contamination. Hg is the major toxicity contributor, accounting for 53.3-93.2%, 7.9-54.9% to total toxicity in Wuli River and Lianshan River, respectively, followed by Cd. In Cishan River, Cd is the major sediment toxicity contributor, however, accounting for 63.2-66.9% of total toxicity. (C) 2008 Elsevier Ltd. All rights reserved

Theoretical and experimental analysis of AlGaInP micro-LED array with square-circle anode

An array of 320 × 240 micro-light-emitting diodes (micro-LEDs) based on an AlGaInP epitaxial wafer and with a unit size of 100 µm×100 µm was designed and fabricated. The optimum width of the isolation groove between adjacent light-emitting units was determined based on a compromise between full isolation of each LED and maximization of the light emitting area, and was found to be 20 µm. The grooves were filled with a mixed Si granule-polyurethane composite medium, because this type of insulating material can reflect part of the emitted light from the sidewall to the window layer in each light-emitting unit, and could thus improve lighting output efficiency. The 10-µm-wide square-circle anode was designed to increase the light emitting area while simultaneously being simple to fabricate. The device current used was in the 0.42–1.06 mA range to guarantee internal quantum efficiency of more than 85%, with a corresponding voltage range of 2–2.3 V. The layered temperature distribution in a single unit was simulated under a drive voltage of 2.2 V, and the maximum device temperature was 341 K. The micro-opto-electro-mechanical systems (MOEMS) technology-based fabrication process, experimental images of the device and device test results are presented here

Overview of 3D-Printed Silica Glass

Not satisfied with the current stage of the extensive research on 3D printing technology for polymers and metals, researchers are searching for more innovative 3D printing technologies for glass fabrication in what has become the latest trend of interest. The traditional glass manufacturing process requires complex high-temperature melting and casting processes, which presents a great challenge to the fabrication of arbitrarily complex glass devices. The emergence of 3D printing technology provides a good solution. This paper reviews the recent advances in glass 3D printing, describes the history and development of related technologies, and lists popular applications of 3D printing for glass preparation. This review compares the advantages and disadvantages of various processing methods, summarizes the problems encountered in the process of technology application, and proposes the corresponding solutions to select the most appropriate preparation method in practical applications. The application of additive manufacturing in glass fabrication is in its infancy but has great potential. Based on this view, the methods for glass preparation with 3D printing technology are expected to achieve both high-speed and high-precision fabrication

Dual functionality metamaterial enables ultra-compact, highly sensitive uncooled infrared sensor

Cointegration and coupling a perfect metamaterial absorber (PMA) together with a film bulk acoustic wave resonator (FBAR) in a monolithic fashion is introduced for the purpose of producing ultracompact uncooled infrared sensors of high sensitivity. An optimized ultrathin multilayer stack was implemented to realize the proposed device. It is experimentally demonstrated that the resonance frequency of the FBAR can be used efficiently as a sensor output as it downshifts linearly with the intensity of the incident infrared irradiation. The resulting sensor also achieves a high absorption of 88% for an infrared spectrum centered at a wavelength of 8.2 μm. The structure is compact and can be easily integrated on a CMOS-compatible chip since both the FBAR and PMA utilize and share the same stack of metal and dielectric layers

Ultra-broadband metamaterial absorber in long wavelength Infrared band based on resonant cavity modes

International audienc

Dual functionality metamaterial enables ultra-compact, highly sensitive uncooled infrared sensor

International audienceCointegration and coupling a perfect metamaterial absorber (PMA) together with a film bulk acoustic wave resonator (FBAR) in a monolithic fashion is introduced for the purpose of producing ultracompact uncooled infrared sensors of high sensitivity. An optimized ultrathin multilayer stack was implemented to realize the proposed device. It is experimentally demonstrated that the resonance frequency of the FBAR can be used efficiently as a sensor output as it downshifts linearly with the intensity of the incident infrared irradiation. The resulting sensor also achieves a high absorption of 88% for an infrared spectrum centered at a wavelength of 8.2 μm. The structure is compact and can be easily integrated on a CMOS-compatible chip since both the FBAR and PMA utilize and share the same stack of metal and dielectric layers