Controlling Ambipolar Transport and Voltage Inversion in Solution-Processed Thin-Film Devices through Polymer Blending

Ambipolar semiconductors are attracting a great interest as building blocks for photovoltaics and logic applications. Field-effect transistors built on solution-processable ambipolar materials hold strong promise for the engineering of large-area low-cost logic circuits with a reduced number of devices components. Such devices still suffer from a number of obstacles including the challenging processing, the low Ion/Ioff, the unbalanced mobility, and the low gain in complementary metal–oxide–semiconductor (CMOS)-like circuits. Here, we demonstrate that the simple approach of blending commercially available n- and p-type polymers such as P(NDI2OD-T2), P3HT, PCD-TPT, PDVT-8, and IIDDT-C3 can yield high-performing ambipolar field-effect transistors with balanced mobilities and Ion/Ioff > 10^7. Each single component was studied separately and upon blending by means of electrical characterization, ambient ultraviolet photoelectron spectroscopy, atomic force microscopy, and grazing incidence wide angle X-ray scattering to unravel the correlation between the morphology/structure of the semiconducting films and their functions. Blends of n- and p-type semiconductors were used to fabricate CMOS-like inverter circuits with state-of-the-art gains over 160 in the case of P(NDI2OD-T2) blended with PDVT-8. Significantly, our blending approach was successful in producing semiconducting films with balanced mobilities for each of the four tested semiconductor blends, although the films displayed different structural and morphological features. Our strategy, which relies on establishing a correlation between ambipolar performances, film morphology, molecular structure, and blending ratio, is extremely efficient and versatile; thus it could be applied to a wide range of polymers or solution processable small molecules

Improving the electrical performance of solution processed oligothiophene thin-film transistors via structural similarity blending

Here we show that the blending of structurally similar oligothiophene molecules is an effective approach to improve the field-effect mobility and Ion/Ioff as compared to single component based transistors. The effect of addition of each component is studied extensively using a wide array of methods such as X-ray diffraction, ToF-SIMS, and ambient UPS correlated with the electrical characterization

Graphene exfoliation in the presence of semiconducting polymers for improved film homogeneity and electrical performances

We report on the production of hybrid graphene/semiconducting polymer films in one step procedure by making use of ultrasound-assisted liquid-phase exfoliation of graphite powder in the presence of π-conjugated polymers, i.e. poly(3-hexylthiophene) (P3HT) or poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-alt-[1,2,5]thiadiazolo-[3,4-c]pyridine] (PCDTPT). The polymers were chosen in view of their different propensity to form crystalline structures, their decoration with alkyl chains that are known to possess high affinity for the basal plane of graphene, the energy levels of their frontier orbitals which are extremely similar to the work function of graphene, and their high electrical performance when integrated in field-effect transistors (FETs). The polymers act as a dispersion-stabilizing agent and prevent the re-aggregation of the exfoliated graphene flakes, ultimately enabling the production of homogeneous bi-component dispersions. The electrical characterization of few-layer graphene/PCDTPT hybrids, when integrated as active layer in bottom-contact bottom-gate FETs, revealed an increase of the field-effect mobility compared to the π-conjugated-based pristine devices, a result which can be attributed to the joint effect of the few-layer graphene sheets and semiconducting polymers improving the charge-transport in the channel of the field-effect transistor. In particular, few-layer graphene/PCDTPT films displayed a 30-fold increase of PCDTPT's mobility if compared to pristine polymer samples. Such findings represent a step forward towards the optimization of graphene exfoliation and processing into electronic devices, as well as towards improved electrical performance in organic-based field-effect transistors

Morphology and Electronic Properties of Electrochemically Exfoliated Graphene

Electrochemically exfoliated graphene (EEG) possesses optical and electronic properties that are markedly different from those of the more explored graphene oxide in both its pristine and reduced forms. EEG also holds a unique advantage compared to other graphenes produced by exfoliation in liquid media: it can be obtained in large quantities in a short time. However, an in-depth understanding of the structure–properties relationship of this material is still lacking. In this work, we report physicochemical characterization of EEG combined with an investigation of the electronic properties of this material carried out both at the single flake level and on the films. Additionally, we use for the first time microwave irradiation to reduce the EEG and demonstrate that the oxygen functionalities are not the bottleneck for charge transport in EEG, which is rather hindered by the presence of structural defects within the basal plane

A two-component hydrograph separation for three high-elevation catchments in the Sierra Nevada, California

Two-component hydrograph separations were performed for three, nested, snowmelt-dominated catchments in Sequoia National Park. The purpose of the hydrograph separations was to: (i) differentiate between the old and new water contributions to discharge during snowmelt using δ18O signatures; (ii) identify the fraction of snowmelt that travelled through the subsurface (reactive) compartment during the snowmelt period using silica or sodium; and (iii) investigate the impact of changing end-member signatures on the separations. 'Old' water refers to water that was stored in the watershed during the previous year, whereas 'new' water is current snowmelt. Hydrograph separations were performed for both a high-accumulation (1998, annual precipitation 2·4 m) and an average year (1999, 1·3 m). The proportion of old water contribution to discharge during the rising limb of the hydrograph was 10-20%, with 80-100% of snowmelt being reactive, i.e. passing through soil and talus. Estimates of old and new soil water and direct snowmelt entering the stream varied among the catchments in 1999. Differences between these components were minimal in 1998, regardless of varying topography and differing proportions of soil, rock and talus. Using time-dependent rather than constant δ18O meltwater and silica soil-water signatures made a meaningful impact on both new and old water, and reactive and unreactive, estimates. © 2004 John Wiley and Sons, Ltd

A two-component hydrograph separation for three high-elevation catchments in the Sierra Nevada, California

Two-component hydrograph separations were performed for three, nested, snowmelt-dominated catchments in Sequoia National Park. The purpose of the hydrograph separations was to: (i) differentiate between the old and new water contributions to discharge during snowmelt using δ18O signatures; (ii) identify the fraction of snowmelt that travelled through the subsurface (reactive) compartment during the snowmelt period using silica or sodium; and (iii) investigate the impact of changing end-member signatures on the separations. 'Old' water refers to water that was stored in the watershed during the previous year, whereas 'new' water is current snowmelt. Hydrograph separations were performed for both a high-accumulation (1998, annual precipitation 2·4 m) and an average year (1999, 1·3 m). The proportion of old water contribution to discharge during the rising limb of the hydrograph was 10-20%, with 80-100% of snowmelt being reactive, i.e. passing through soil and talus. Estimates of old and new soil water and direct snowmelt entering the stream varied among the catchments in 1999. Differences between these components were minimal in 1998, regardless of varying topography and differing proportions of soil, rock and talus. Using time-dependent rather than constant δ18O meltwater and silica soil-water signatures made a meaningful impact on both new and old water, and reactive and unreactive, estimates. © 2004 John Wiley and Sons, Ltd

Controlling Ambipolar Transport and Voltage Inversion in Solution-Processed Thin-Film Devices through Polymer Blending

International audienceAmbipolar semiconductors are attracting a great interest as building blocks for photovoltaics and logic applications. Field-effect transistors built on solution-processable ambipolar materials hold strong promise for the engineering of large-area low-cost logic circuits with a reduced number of devices components. Such devices still suffer from a number of obstacles including the challenging processing, the low Ion/Ioff, the unbalanced mobility, and the low gain in complementary metal–oxide–semiconductor (CMOS)-like circuits. Here, we demonstrate that the simple approach of blending commercially available n- and p-type polymers such as P(NDI2OD-T2), P3HT, PCD-TPT, PDVT-8, and IIDDT-C3 can yield high-performing ambipolar field-effect transistors with balanced mobilities and Ion/Ioff > 10^7. Each single component was studied separately and upon blending by means of electrical characterization, ambient ultraviolet photoelectron spectroscopy, atomic force microscopy, and grazing incidence wide angle X-ray scattering to unravel the correlation between the morphology/structure of the semiconducting films and their functions. Blends of n- and p-type semiconductors were used to fabricate CMOS-like inverter circuits with state-of-the-art gains over 160 in the case of P(NDI2OD-T2) blended with PDVT-8. Significantly, our blending approach was successful in producing semiconducting films with balanced mobilities for each of the four tested semiconductor blends, although the films displayed different structural and morphological features. Our strategy, which relies on establishing a correlation between ambipolar performances, film morphology, molecular structure, and blending ratio, is extremely efficient and versatile; thus it could be applied to a wide range of polymers or solution processable small molecules

Bei der Beschaffung die richtigen Anreize setzen

Der Bundesrechnungshof und die Landesrechnungshöfe erkennen ÖPP als wertneutrale Beschaffungsvariante an. Die gerügten Defizite betreffen überwiegend die praktische Umsetzung, stellt der Bundesverband PPP in diesem Beitrag klar

Nitrate, a signal relieving seed dormancy in Arabidopsis.

Nitrate is an important nitrogen source for plants, but also a signal molecule that controls various aspects of plant development. In the present study the role of nitrate on seed dormancy in Arabidopsis was investigated. The effects of either mutations affecting the Arabidopsis nitrate reductase genes or of different nitrate regimes of mother plants on the dormancy of the seeds produced were analysed. Altogether, data show that conditions favouring nitrate accumulation in mother plants and in seeds lead to a lower dormancy of seeds with little other morphological or biochemical differences. Analysis of germination during seed development indicated that nitrate does not prevent the onset of dormancy but rather its maintenance. The effect of an exogenous supply of nitrate on seed germination was tested: nitrate in contrast to glutamine or potassium chloride clearly stimulated the germination of dormant seeds. Data show, moreover, that the Arabidopsis dual affinity nitrate transporter NRT1.1 (CHL1) may be involved in conveying the nitrate signal into seeds. Thus, nitrate provided exogenously or by mother plants to the produced seeds, acts as a signal molecule favouring germination in Arabidopsis. This signalling may involve interaction with the abscisic acid or gibberellin pathway