Measurements of the Composite Fermion masses from the spin polarization of 2-D electrons in the region 1<ν<21<\nu<2

Measurements of the reflectivity of a 2-D electron gas are used to deduce the polarization of the Composite Fermion hole system formed for Landau level occupancies in the regime 1<\nu<2. The measurements are consistent with the formation of a mixed spin CF system and allow the density of states or `polarization' effective mass of the CF holes to be determined. The mass values at \nu=3/2 are found to be ~1.9m_{e} for electron densities of 4.4 x 10^{11} cm^{-2}, which is significantly larger than those found from measurements of the energy gaps at finite values of effective magnetic field.Comment: 4 pages, 3 fig

High-frequency performance of Schottky source/drain silicon pMOS devices

A radio-frequency performance of 85-nm gate-length p-type Schottky barrier (SB) with PtSi source/drain materials is investigated. The impact of silicidation annealing temperature on the high-frequency behavior of SB MOSFETs is analyzed using an extrinsic small-signal equivalent circuit. It is demonstrated that the current drive and the gate transconductance strongly depend on the silicidation anneal temperature, whereas the unity-gain cutoff frequency of the measured devices remains nearly unchanged

Ohmic contacts to n-type germanium with low specific contact resistivity

A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.3 &#177; 1.8) x10&lt;sup&gt;-7&lt;/sup&gt; &#937;-cm&lt;sup&gt;2&lt;/sup&gt; for anneal temperatures of 340 degC. The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope. Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge.&lt;p&gt;&lt;/p&gt

Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates

Strain relaxation has been studied in tensile strained silicon layers grown on Si0.5Ge0.5 virtual substrates, for layers many times the critical thickness, using high resolution x-ray diffraction. Layers up to 30 nm thick were found to relax less than 2% by the glide of preexisting 60° dislocations. Relaxation is limited because many of these dislocations dissociate into extended stacking faults that impede the dislocation glide. For thicker layers, nucleated microtwins were observed, which significantly increased relaxation to 14%. All these tensile strained layers are found to be much more stable than layers with comparable compressive strain

Experimental evidence of a metal-insulator transition in a half-filled Landau level

We have measured the low-temperature transport properties of a high-mobility front-gated GaAs/Al_{0.33}Ga_{0.67}As heterostructure. By changing the applied gate voltage, we can vary the amount of disorder within the system. At a Landau level filling factor $\nu =1/2$, where the system can be described by the composite fermion picture, we observe a crossover from metallic to insulating behaviour as the disorder is increased. Experimental results and theoretical prediction are compared.Comment: To be published in Solid State Communications. 4 figure

Composite fermions in the Fractional Quantum Hall Effect: Transport at finite wavevector

We consider the conductivity tensor for composite fermions in a close to half-filled Landau band in the temperature regime where the scattering off the potential and the trapped gauge field of random impurities dominates. The Boltzmann equation approach is employed to calculate the quasiclassical transport properties at finite effective magnetic field, wavevector and frequency. We present an exact solution of the kinetic equation for all parameter regimes. Our results allow a consistent description of recently observed surface acoustic wave resonances and other findings.Comment: REVTEX, 4 pages, 1 figur

Composite fermions in a long-range random magnetic field: Quantum Hall effect versus Shubnikov-de Haas oscillations

We study transport in a smooth random magnetic field, with emphasis on composite fermions (CF) near half-filling of the Landau level. When either the amplitude of the magnetic field fluctuations or its mean value $\bar B$ is large enough, the transport is of percolating nature. While at $\bar{B}=0$ the percolation effects enhance the conductivity $\sigma_{xx}$, increasing $\bar B$ (which corresponds to moving away from half-filling for the CF problem) leads to a sharp falloff of $\sigma_{xx}$ and, consequently, to the quantum localization of CFs. We demonstrate that the localization is a crucial factor in the interplay between the Shubnikov-de Haas and quantum Hall oscillations, and point out that the latter are dominant in the CF metal.Comment: 4 pages, RevTe