18,552 research outputs found

    Simultaneous space charge and conduction current measurements in solid dielectrics under high dc electric field

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    The importance of space charge in solid dielectrics has been recognized for many years and various attempts have been made to map the distribution and assess its influence on the electrical performance of solid dielectrics. Significant development in non-destructive measurement techniques emerged two decades ago. Crosslinked polyethylene (XLPE) has been used for ac power cable insulation up to 500 kV for many years. There is a tendency to use XLPE for dc power cable. However, the easy formation of space charge under dc electric field within XLPE is a major concern for such an application. Space charge in insulation can distort electric field distribution, causing electric field increase in one region and reduction in another. The electric field enhancement could lead to degradation and result in premature failure. Electrical treeing in solid dielectrics is a typical example of local field enhancement due to space charge accumulation. In this report several popular non-destructive techniques are briefly reviewed. This is followed by detailed description of a modified pulsed electroacoustic (PEA) technique that allows simultaneous measurement of space charge and conduction current in a solid dielectric subjected to high dc electric fields. Finally, we report the relationship between space charge dynamics and electrical conduction current in XLPE using the modified PEA system. The effect of electrode material on both charge dynamics and current has been investigated using semiconducting material and aluminium. It has been found charge dynamics in the material depend on electrode configuration. More importantly, it has been noticed that the so called space charge limited transient current peaks are closely related to the meetings of negative and positive charge front in the bulk of the sample

    Action and Energy of the Gravitational Field

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    We present a detailed examination of the variational principle for metric general relativity as applied to a ``quasilocal'' spacetime region \M (that is, a region that is both spatially and temporally bounded). Our analysis relies on the Hamiltonian formulation of general relativity, and thereby assumes a foliation of \M into spacelike hypersurfaces Σ\Sigma. We allow for near complete generality in the choice of foliation. Using a field--theoretic generalization of Hamilton--Jacobi theory, we define the quasilocal stress-energy-momentum of the gravitational field by varying the action with respect to the metric on the boundary \partial\M. The gravitational stress-energy-momentum is defined for a two--surface BB spanned by a spacelike hypersurface in spacetime. We examine the behavior of the gravitational stress-energy-momentum under boosts of the spanning hypersurface. The boost relations are derived from the geometrical and invariance properties of the gravitational action and Hamiltonian. Finally, we present several new examples of quasilocal energy--momentum, including a novel discussion of quasilocal energy--momentum in the large-sphere limit towards spatial infinity.Comment: To be published in Annals of Physics. This final version includes two new sections, one giving examples of quasilocal energy and the other containing a discussion of energy at spatial infinity. References have been added to papers by Bose and Dadhich, Anco and Tun

    Canonical Quasilocal Energy and Small Spheres

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    Consider the definition E of quasilocal energy stemming from the Hamilton-Jacobi method as applied to the canonical form of the gravitational action. We examine E in the standard "small-sphere limit," first considered by Horowitz and Schmidt in their examination of Hawking's quasilocal mass. By the term "small sphere" we mean a cut S(r), level in an affine radius r, of the lightcone belonging to a generic spacetime point. As a power series in r, we compute the energy E of the gravitational and matter fields on a spacelike hypersurface spanning S(r). Much of our analysis concerns conceptual and technical issues associated with assigning the zero-point of the energy. For the small-sphere limit, we argue that the correct zero-point is obtained via a "lightcone reference," which stems from a certain isometric embedding of S(r) into a genuine lightcone of Minkowski spacetime. Choosing this zero-point, we find agreement with Hawking's quasilocal mass expression, up to and including the first non-trivial order in the affine radius. The vacuum limit relates the quasilocal energy directly to the Bel-Robinson tensor.Comment: revtex, 22 p, uses amssymb option (can be removed

    Ti and V layers retard interaction between Al films and polycrystalline Si

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    Fine-grained polycrystalline Si (poly Si) in contact with Al films recrystallizes at temperatures well below the Si-Al eutectic (577 °C). We show that this interaction can be deferred or suppressed by placing a buffer layer of Ti or V between the Al film and the poly Si. During annealing, Ti or V form TiAl3 or Val3 at the buffer-layer–Al-film interface, but do not react with the poly Si so that the integrity of the poly Si is preserved as long as some unreacted Ti or V remains. The reaction between the Ti or V layer and the Al film is transport limited ([proportional]t^1/2) and characterized by the diffusion constants 1.5×10^15 exp(–1.8eV/kT) Å^2/sec or 8.4×10^12 exp(–1.7eV/kT) Å^2/sec, respectively

    Sequence of phase formation in planar metal-Si reaction couples

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    A correlation is found between the sequence of phase formation in thin-film metal-Si interactions and the bulk equilibrium phase diagram. After formation of the first silicide phase, which generally follows the rule proposed by Walser and Bené, the next phase formed at the interface between the first phase and the remaining element (Si or metal) is the nearest congruently melting compound richer in the unreacted element. If the compounds between the first phase and the remaining element are all noncongruently melting compounds (such as peritectic or peritectoid phases), the next phase formed is that with the smallest temperature difference between the liquidus curve and the peritectic (or peritectoid) point

    Structural difference rule for amorphous alloy formation by ion mixing

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    We formulate a rule which establishes a sufficient condition that an amorphous binary alloy will be formed by ion mixing of multilayered samples when the two constituent metals are of different crystalline structure, regardless of their atomic sizes and electronegativities. The rule is supported by the experimental results we have obtained on six selected binary metal systems, as well as by the previous data reported in the literature. The amorphization mechanism is discussed in terms of the competition between two different structures resulting in frustration of the crystallization process

    Heterostructure by solid‐phase epitaxy in the Si〈111〉/Pd/Si (amorphous) system

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    When a thin film of Pd reacts with a 〈111〉 Si substrate, a layer of epitaxial Pd_2Si is formed. It is shown that Si can grow epitaxially on such a layer by solid‐phase reaction

    New variables, the gravitational action, and boosted quasilocal stress-energy-momentum

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    This paper presents a complete set of quasilocal densities which describe the stress-energy-momentum content of the gravitational field and which are built with Ashtekar variables. The densities are defined on a two-surface BB which bounds a generic spacelike hypersurface Σ\Sigma of spacetime. The method used to derive the set of quasilocal densities is a Hamilton-Jacobi analysis of a suitable covariant action principle for the Ashtekar variables. As such, the theory presented here is an Ashtekar-variable reformulation of the metric theory of quasilocal stress-energy-momentum originally due to Brown and York. This work also investigates how the quasilocal densities behave under generalized boosts, i. e. switches of the Σ\Sigma slice spanning BB. It is shown that under such boosts the densities behave in a manner which is similar to the simple boost law for energy-momentum four-vectors in special relativity. The developed formalism is used to obtain a collection of two-surface or boost invariants. With these invariants, one may ``build" several different mass definitions in general relativity, such as the Hawking expression. Also discussed in detail in this paper is the canonical action principle as applied to bounded spacetime regions with ``sharp corners."Comment: Revtex, 41 Pages, 4 figures added. Final version has been revised and improved quite a bit. To appear in Classical and Quantum Gravit

    Structural evaluation of concrete expanded polystyrene sandwich panels for slab applications

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    Sandwich panels are being extensively and increasingly used in building construction because they are light in weight, energy efficient, aesthetically attractive and can be easily handled and erected. This paper presents a structural evaluation of Concrete-Expanded Polystyrene (CEPS) sandwich panels for slab applications using finite element modeling approach. CEPS panels are made of expanded polystyrene foam sandwiched between concrete skins. The use of foam in the middle of sandwich panel reduces the weight of the structure and also acts as insulation against thermal, acoustics and vibration. Applying reinforced concrete skin to both sides of panel takes the advantages of the sandwich concept where the reinforced concrete skins take compressive and tensile loads resulting in higher stiffness and strength and the core transfers shear loads between the faces. This research uses structural software Strand7, which is based on finite element method, to predict the load deformation behaviour of the CEPS sandwich slab panels. Non linear static analysis was used in the numerical investigations. Predicted results were compared with the existing experimental results to validate the numerical approach used

    Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiation

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    We demonstrate that a single short pulse of electron irradiation of appropriate energy is capable of recrystallizing epitaxially an amorphous Ge layer deposited on either or Si single-crystal substrate. The primary defects observed in the case were dislocations, whereas stacking faults were observed in samples
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