Chemical etching and organometallic chemical vapor deposition on varied geometries of GaAs

Results of micron-spaced geometries produced by wet chemical etching and subsequent OMCVD growth on various GaAs surfaces are presented. The polar lattice increases the complexity of the process. The slow-etch planes defined by anisotropic etching are not always the same as the growth facets produced during MOCVD deposition, especially for deposition on higher-order planes produced by the hex groove etching

Recent Decisions

Comments on recent decisions by David S. Landis, Theodore M. Ryan, Francis J. Paulson, Thomas F. Bremer, and Robert A. Oberfell

Current Law Review Digest Series

Series by David S. Landis, John D. O\u27Neill, Arthur A. May, Arthur M. Diamond, Norbert S. Wleklinski, and Francis J. Paulson

Current Law Review Digest Series

Series by David S. Landis, John D. O\u27Neill, Arthur A. May, Arthur M. Diamond, Norbert S. Wleklinski, and Francis J. Paulson

InGaAs PV Device Development for TPV Power Systems

Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested