4,890 research outputs found

    Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1–x alloys

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    The nitrogen bonding configurations in GaNxAs1–x alloys grown by molecular beam epitaxy with 0.07=0.03, the nitrogen is found to exist in a single bonding configuration – the Ga–N bond; no interstitial nitrogen complexes are present. The amount of nitrogen in the alloys is estimated from the XPS using the N 1s photoelectron and Ga LMM Auger lines and is found to be in agreement with the composition determined by x-ray diffraction

    Origin of the n-type conductivity of InN: the role of positively charged dislocations

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    As-grown InN is known to exhibit high unintentional n-type conductivity. Hall measurements from a range of high-quality single-crystalline epitaxially grown InN films reveal a dramatic reduction in the electron density (from low 1019 to low 1017 cm–3) with increasing film thickness (from 50 to 12 000 nm). The combination of background donors from impurities and the extreme electron accumulation at InN surfaces is shown to be insufficient to reproduce the measured film thickness dependence of the free-electron density. When positively charged nitrogen vacancies (VN+) along dislocations are also included, agreement is obtained between the calculated and experimental thickness dependence of the free-electron concentration

    Ion-Beam Induced Current in High-Resistance Materials

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    The peculiarities of electric current in high-resistance materials, such as semiconductors or semimetals, irradiated by ion beams are considered. It is shown that after ion--beam irradiation an unusual electric current may arise directed against the applied voltage. Such a negative current is a transient effect appearing at the initial stage of the process. The possibility of using this effect for studying the characteristics of irradiated materials is discussed. A new method for defining the mean projected range of ions is suggested.Comment: 1 file, 7 pages, RevTex, no figure

    Modelling the hepatitis B vaccination programme in prisons

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    A vaccination programme offering hepatitis B (HBV) vaccine at reception into prison has been introduced into selected prisons in England and Wales. Over the coming years it is anticipated this vaccination programme will be extended. A model has been developed to assess the potential impact of the programme on the vaccination coverage of prisoners, ex-prisoners, and injecting drug users (IDUs). Under a range of coverage scenarios, the model predicts the change over time in the vaccination status of new entrants to prison, current prisoners and IDUs in the community. The model predicts that at baseline in 2012 57% of the IDU population will be vaccinated with up to 72% being vaccinated depending on the vaccination scenario implemented. These results are sensitive to the size of the IDU population in England and Wales and the average time served by an IDU during each prison visit. IDUs that do not receive HBV vaccine in the community are at increased risk from HBV infection. The HBV vaccination programme in prisons is an effective way of vaccinating this hard-to-reach population although vaccination coverage on prison reception must be increased to achieve this
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