Presence of antibody to A- and B-transferases in minor incompatible bone marrow transplants

The contribution of the bone marrow to plasma A- or B-transferase activities has been studied in patients who underwent incompatible bone marrow transplantation (BMT). As deduced from major incompatibility (group O recipient/A donor), the contribution of the marrow to these plasma activities was c. 5–10% of the total activity. In cases of minor incompatible transplants (A recipient/O donor), normal plasma activity was present in two patients, while no activity was found in a further two in whom a potent anti-transferase was detected. The antibody inhibited both A- and B-transferase activities to a high titre. The patients in whom this antibody arose exhibited severe graft-versus-host disease.Peer Reviewe

Tecnologias energeticas e impacto ambiental. JEN-CIEMAT 1951-2001

Centro de Informacion y Documentacion Cientifica (CINDOC). C/Joaquin Costa, 22. 28002 Madrid. SPAIN / CINDOC - Centro de Informaciòn y Documentaciòn CientìficaSIGLEESSpai

Contrôle de l'élaboration des thyristors par thermocapacitance : caractérisation de centres recombinants induits

Nous appliquons la thermocapacitance et la méthode des transitoires de capacité dans l'obscurité aux dispositifs de puissance au silicium. Nous utilisons ces méthodes pour caractériser les niveaux d'énergie profonds induits à chaque étape de la fabrication de thyristors. Nous trouvons trois niveaux à Ec — (160 ± 5) meV, Ec — (257 ± 4) meV et Ec — (542 ± 4) meV. Le second et le troisième niveau sont associés à des centres recombinants induits par la trempe (Quenched-in centers)

Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures

Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transients varies with the frequency at which they are obtained. This behavior is explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model. (C) 1997 American Institute of Physics