Silicon-organic hybrid (SOH) devices and their use in comb-based communication systems

Advanced wavelength-division multiplex-ing (WDM) requires both efficient multi-wavelength light sources to generate optical carriers and highly scalable photonic-electronic interfaces to encode data on these carriers. In this paper, we give an overview on our recent progress regarding silicon-organic hy-brid (SOH) integration and comb-based WDM transmission

Terahertz radiation from heavy-ion-irradiated In0.53Ga0.47_{0.53}Ga_{0.47}As photoconductive antenna excited at 1.55 μ\mum

We investigate terahertz (THz) emission from heavy-ion-irradiated In0.53Ga0.47As photoconductive antennas excited at 1550 nm. The carrier lifetime in the highly irradiated In0.53Ga0.47As layer is less than 200 fs, the steady-state mobility is 490 cm2 V–1 s–1, and the dark resistivity is 3 Omega cm. The spectrum of the electric field radiating from the Br+-irradiated In0.53Ga0.47As antenna extends beyond 2 THz. The THz electric field magnitude is shown to saturate at high optical pump fluence, and the saturation fluence level increases with the irradiation dose, indicating that defect center scattering has a significant contribution to the transient mobility

Emission characteristics of ion-irradiated In0.53Ga0.47As based photoconductive antennas excited at 1.55 mu m

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Lon-irradiated In0.53Ga0.47As based photoconductive antennas excited at 1.55 mu m for time domain terahertz spectroscopy

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Emission characteristics of ion-irradiated In0.53Ga0.47As based photoconductive antennas excited at 1.55 µm

International audienceWe present a detailed study of the effect of the carrier lifetime on the terahertz signal characteristics emitted by Br+-irradiated In0.53Ga0.47As photoconductive antennas excited by 1550 nm wavelength femtosecond optical pulses. The temporal waveforms and the average radiated powers for various carrier lifetimes are experimentally analyzed and compared to predictions of analytical models of charge transport. Improvements in bandwidth and in average power of the emitted terahertz radiation are observed with the decrease of the carrier lifetime on the emitter. The power radiated by ion-irradiated In0.53Ga0.47As photoconductive antennas excited by 1550 nm wavelength optical pulses is measured to be 0.8 μW. This value is comparable with or greater than that emitted by similar low temperature grown GaAs photoconductive antennas excited by 780 nm wavelength optical pulses