Singular robust room-temperature spin response from topological Dirac fermions

Topological insulators are a class of solids in which the nontrivial inverted bulk band structure gives rise to metallic surface states that are robust against impurity scattering. In three-dimensional (3D) topological insulators, however, the surface Dirac fermions intermix with the conducting bulk, thereby complicating access to the low energy (Dirac point) charge transport or magnetic response. Here we use differential magnetometry to probe spin rotation in the 3D topological material family (Bi$_2$Se$_3$, Bi$_2$Te$_3$, and Sb$_2$Te$_3$). We report a paramagnetic singularity in the magnetic susceptibility at low magnetic fields which persists up to room temperature, and which we demonstrate to arise from the surfaces of the samples. The singularity is universal to the entire family, largely independent of the bulk carrier density, and consistent with the existence of electronic states near the spin-degenerate Dirac point of the 2D helical metal. The exceptional thermal stability of the signal points to an intrinsic surface cooling process, likely of thermoelectric origin, and establishes a sustainable platform for the singular field-tunable Dirac spin response.Comment: 20 pages, 14 figure

Повышение эффективности взаимодействия проектировщиков бортовой радиоэлектронной аппаратуры космических аппаратов на базе интеграции информационных систем

Предложен подход реализации информационного взаимодействия проектировщиков бортовой радиоэлектронной аппаратуры, повышающий эффективность использования ресурсов и управление производственными процессами. Представлена концепция практической реализации предложенного подхода в среде PLM-системы Enovia SmarTeam. Разработан алгоритм сохранения данных проектов EDA-системы Altium Designer в хранилище данных PLM-системы Enovia SmarTeam. Сформирован механизм генерации конструкторских документов на базе формата хранения данных JSON

Stable topological insulators achieved using high energy electron beams

Topological insulators are transformative quantum solids with immune-to-disorder metallic surface states having Dirac band structure. Ubiquitous charged bulk defects, however, pull the Fermi energy into the bulk bands, denying access to surface charge transport. Here we demonstrate that irradiation with swift ($\sim 2.5$ MeV energy) electron beams allows to compensate these defects, bring the Fermi level back into the bulk gap, and reach the charge neutrality point (CNP). Controlling the beam fluence we tune bulk conductivity from \textit{p}- (hole-like) to \textit{n}-type (electron-like), crossing the Dirac point and back, while preserving the Dirac energy dispersion. The CNP conductance has a two-dimensional (2D) character on the order of ten conductance quanta $G_0 =e^2/h$, and reveals, both in Bi$_2$Te$_3$ and Bi$_2$Se$_3$, the presence of only two quantum channels corresponding to two topological surfaces. The intrinsic quantum transport of the topological states is accessible disregarding the bulk size.Comment: Main manuscript - 12 pages, 4 figures; Supplementary file - 15 pages, 11 figures, 1 Table, 4 Note

Tunable magnetic domains in ferrimagnetic MnSb2_2Te4_4

Highly tunable properties make Mn(Bi,Sb)$_2$Te$_4$ a rich playground for exploring the interplay between band topology and magnetism: On one end, MnBi$_2$Te$_4$ is an antiferromagnetic topological insulator, while the magnetic structure of MnSb$_2$Te$_4$ (MST) can be tuned between antiferromagnetic and ferrimagnetic. Motivated to control electronic properties through real-space magnetic textures, we use magnetic force microscopy (MFM) to image the domains of ferrimagnetic MST. We find that magnetic field tunes between stripe and bubble domain morphologies, raising the possibility of topological spin textures. Moreover, we combine in situ transport with domain manipulation and imaging to both write MST device properties and directly measure the scaling of the Hall response with domain area. This work demonstrates measurement of the local anomalous Hall response using MFM, and opens the door to reconfigurable domain-based devices in the M(B,S)T family

Hydrogen induces chiral conduction channels in the topological magnet

Chirality, a characteristic handedness that distinguishes 'left' from 'right', cuts widely across all of nature$^1$, from the structure of DNA$^2$ to opposite chirality of particles and antiparticles$^3$. In condensed matter chiral fermions have been identified in Weyl semimetals$^4$ through their unconventional electrodynamics arising from 'axial' charge imbalance between chiral Weyl nodes of topologically nontrivial electronic bands. Up to now it has been challenging or impossible to create transport channels of Weyl fermions in a single material that could be easily configured for advancing chiral logic or spintronics$^{5,6}$. Here we generate chirality-directed conduction channels in inversion-symmetric Weyl ferromagnet (FM) $MnSb_2Te_4$, emergent from a deep connection between chirality in reciprocal and real space. We alter the bandstructure on-demand with an intake and a subsequent release of ionic hydrogen ($H^+$) $-$ a process we show to induce the tilt and rotation of Weyl bands. The transformed Weyl FM states feature a doubled Curie temperature $\geq50K$ and an enhanced angular transport chirality synchronous with a rare field-antisymmetric longitudinal resistance $-$ a low-field tunable 'chiral switch' that roots in the interplay of Berry curvature$^7$, chiral anomaly$^8$ and hydrogen-engendered mutation of Weyl nodes

Structural and magnetic properties of molecular beam epitaxy (MnSb2Te4)x(Sb2Te3)1-x topological materials with exceedingly high Curie temperature

Tuning magnetic properties of magnetic topological materials is of interest to realize elusive physical phenomena such as quantum anomalous hall effect (QAHE) at higher temperatures and design topological spintronic devices. However, current topological materials exhibit Curie temperature (TC) values far below room temperature. In recent years, significant progress has been made to control and optimize TC, particularly through defect engineering of these structures. Most recently we showed evidence of TC values up to 80K for (MnSb2Te4)x(Sb2Te3)1-x, where x is greater than or equal to 0.7 and less than or equal to 0.85, by controlling the compositions and Mn content in these structures. Here we show further enhancement of the TC, as high as 100K, by maintaining high Mn content and reducing the growth rate from 0.9 nm/min to 0.5 nm/min. Derivative curves reveal the presence of two TC components contributing to the overall value and propose TC1 and TC2 have distinct origins: excess Mn in SLs and Mn in Sb2-yMnyTe3QLs alloys, respectively. In pursuit of elucidating the mechanisms promoting higher Curie temperature values in this system, we show evidence of structural disorder where Mn is occupying not only Sb sites but also Te sites, providing evidence of significant excess Mn and a new crystal structure:(Mn1+ySb2-yTe4)x(Sb2-yMnyTe3)1-x. Our work shows progress in understanding how to control magnetic defects to enhance desired magnetic properties and the mechanism promoting these high TC in magnetic topological materials such as (Mn1+ySb2-yTe4)x(Sb2-yMnyTe3)1-x