A Meta-Analytic Review of Achievement Goal Orientation Correlates in Competitive Sport: A Follow-Up to Lochbaum et al. (2016)

Recent quantitative research in competitive sport with the Task and Ego Orientations in Sport Questionnaire (TEOSQ) and Perceptions of Success Questionnaire (POSQ) pointed to a potential critical issue that the two questionnaires did not agree across a number tested hypotheses (Lochbaum, Kazak Çetinkalp, Graham, Wright, & Zazo, 2016). Thus, the present quantitative review examined whether correlates of the two achievement goal orientations were moderated by the two measures. To achieve this purpose, 772 unique correlates (489 TEOSQ, 283 POSQ; 402 task orientation, 370 ego orientation) from 93 studies spanning 1989-2016 from 32 countries with 26,387 participants were placed into 15 different categories and meta-analyzed. The task goal orientation was significantly and small to moderate in meaningfulness related to adaptive success factors (rw=.29), maladaptive success factors (rw=-.12), desirable behaviors (rw=.28), positive emotions (rw=.35), amotivation (rw=-.13), extrinsic motivation (rw=.20), external regulations (rw=.12), internal regulations (rw=.34), intrinsic motivation (rw=.47), the mastery/task climate (rw=.38), perceived competence (rw=.26), and trait selfesteem (rw=.35). The ego goal orientation was significantly and small in meaningfulness related to adaptive success factors (rw=.10), maladaptive success factors (rw=.12), negative emotions (rw=.11), undesirable behaviors (rw=.23), amotivation (rw=.16), extrinsic motivation (rw=.28), external regulation (rw=.21), intrinsic motivation (rw=.14), performance/ego climate (rw=.28), and perceived competence (rw=.17). The questionnaire measure was a significant moderator for the task goal orientation relationship with desirable behaviors (POSQ rw=.24; TEOSQ rw=.37), internal regulations (POSQ rw=.26; TEOSQ rw=.39), and trait self-esteem (POSQ rw=.45; TEOSQ rw=.32) and for the ego goal orientation relationship with performance/ego climate (POSQ rw=.34; TEOSQ rw=.24). Overall, the extent of the questionnaire type being a concern when examining correlates was fortunately minimal. Yet, differences in the two dominant measures exit. Recommendations for future research examining both the TEOSQ and POSQ were proposed

Identifying technical, physiological, tactical and psychological characteristics that contribute to career progression in soccer

This study sought to examine which technical, physiological, tactical and psychological characteristics at age 15 years contribute to successful soccer performance at age 19 years. Participants were male soccer players (n = 114; mean age 15.4±0.3 years), divided into elite and sub-elite groups based on their performance level at age 19 years. Technical, physiological, tactical and psychological characteristics were recorded when players were 15-year olds. Binary logistic regression analysis showed that performance level at age 19 was clearly associated with technical skills of passing and centering as well as agility and motivation levels recorded at age 15 years. These results extend our understanding of career progression in youth soccer and highlight the multidimensional nature of talent development processes in soccer. Moreover, it seems crucial that coaching support should be devoted to the development of passing and centering skills, agility and motivation in the development of youth players

Role of nitric oxide in Sjogren's syndrome

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Inducible nitric oxide synthase increases secretion from inflamed salivary glands

Objective. Salivary gland secretion is dependent on cholinergic stimulation via autonomic nerves and calcium signalling in acinar cells. Secretory dysfunction associated with SS may be partly caused by the damaging effects of increased glandular concentrations of nitric oxide (NO) derived from up-regulation of inducible NO synthase (iNOS) that accompanies glandular inflammation. The present study examines the effects of increased iNOS expression on salivary gland secretory function

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and also quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells to suppress the temperature dependence of the threshold current in vertical-external-cavity surface-emitting lasers (VECSELs). In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electrodynamics (QED), a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. A difference of this review from the other existing works on semiconductor VECSEL devices is that we will cover both the fundamental aspects and technological approaches of QD VECSEL devices. And lastly, the presented review here has provided a deep insight into useful guideline for the development of QD VECSEL technology and future quantum functional nanophotonic devices and monolithic photonic integrated circuits (MPhICs).Comment: 21 pages, 4 figures. arXiv admin note: text overlap with arXiv:0904.369

Ni+-irradiated InGaAs/GaAs quantum wells: picosecond carrier dynamics

Room-temperature carrier dynamics as functions of heavy-ion implantation and subsequent thermal annealing were investigated for technologically important InGaAs/GaAs quantum wells (QWs) by means of a time-resolved up-conversion method. Sub-picosecond lifetimes were achieved at 10 MeV Ni+ doses of (20-50) x 1010 ions cm-2. The decay rates reached a maximum at the highest irradiation dose, yielding the shortest lifetime of the confined QW states of 600 fs. A simple theoretical model is proposed for the photodynamics of the carriers. The relaxation rate depended on the irradiation dose according to a power law of 1.2, while the irradiated and subsequently annealed samples exhibited a power law of 0.35. The results are qualitatively interpreted.Room-temperature carrier dynamics as functions of heavy-ion implantation and subsequent thermal annealing were investigated for technologically important InGaAs/GaAs quantum wells (QWs) by means of a time-resolved up-conversion method. Sub-picosecond lifetimes were achieved at 10 MeV Ni+ doses of (20-50) x 1010 ions cm-2. The decay rates reached a maximum at the highest irradiation dose, yielding the shortest lifetime of the confined QW states of 600 fs. A simple theoretical model is proposed for the photodynamics of the carriers. The relaxation rate depended on the irradiation dose according to a power law of 1.2, while the irradiated and subsequently annealed samples exhibited a power law of 0.35. The results are qualitatively interpreted.Room-temperature carrier dynamics as functions of heavy-ion implantation and subsequent thermal annealing were investigated for technologically important InGaAs/GaAs quantum wells (QWs) by means of a time-resolved up-conversion method. Sub-picosecond lifetimes were achieved at 10 MeV Ni+ doses of (20-50) x 1010 ions cm-2. The decay rates reached a maximum at the highest irradiation dose, yielding the shortest lifetime of the confined QW states of 600 fs. A simple theoretical model is proposed for the photodynamics of the carriers. The relaxation rate depended on the irradiation dose according to a power law of 1.2, while the irradiated and subsequently annealed samples exhibited a power law of 0.35. The results are qualitatively interpreted.Peer reviewe