Transient Processes in a Binary System with a White Dwarf

Using the results of 3D gas dynamic numerical simulations we propose a mechanism that can explain the quiescent multihumped shape of light curves of WZ Sge short-period cataclysmic variable stars. Analysis of the obtained solutions shows that in the modeled system an accretion disk forms. In the outer regions of the disk four shock waves occur: two arms of the spiral tidal shock; “hot line”, a shock wave caused by the interaction of the circum-disk halo and the stream from the inner Lagrangian point; and the bow-shock forming due to the supersonic motion of the accretor and disk in the gas of the circum-binary envelope. In addition, in our solutions we observe a spiral precessional density wave in the disk. This wave propagates from inside the disk down to its outer regions and almost rests in the laboratory frame in one orbital period. As a results every next orbital period each shock wave passes through the outer part of the density wave. Supplying these shocks with extra-density the precessional density wave amplifies them, which leads to enhanced energy release at each shock and may be observed as a brightening (or hump) in the light curve. Since the velocity of the retrograde precession is a little lower that the orbital velocity of the system, the same shock wave at every next orbital cycle interacts with the density wave later than at the previous cycle. This causes the observed shift of the humps over binary phases. The number of the shock waves, interacting with the density wave determines the largest number of humps that may be observed in one orbital period of a WZ Sge type star

Diffusion doping route to plasmonic Si/SiOx nanoparticles

International audienceSemiconductor nanoparticles (SNPs) are a valuable building block for functional materials. Capabilities for engineering of electronic structure of SNPs can be further improved with development of techniques of doping by diffusion, as post-synthetic introduction of impurities does not affect the nucleation and growth of SNPs. Diffusion of dopants from an external source also potentially allows for temporal control of radial distribution of impurities. In this paper we report on the doping of Si/SiOx SNPs by annealing particles in gaseous phosphorus. The technique can provide efficient incorporation of impurities, controllable with precursor vapor pressure. HRTEM and X-ray diffraction studies confirmed that obtained particles retain their nanocrystallinity. Elemental analysis revealed doping levels up to 10%. Electrical activity of the impurity was confirmed through thermopower measurements and observation of localized surface plasmon resonance in IR spectra. The plasmonic behavior of etched particles and EDX elemental mapping suggest uniform distribution of phosphorus in the crystalline silicon cores. Impurity activation efficiencies up to 34% were achieved, which indicate high electrical activity of thermodynamically soluble phosphorus in oxide-terminated nanosilicon

Measurement of J/ψ→γηcJ/\psi\to\gamma\eta_{\rm c} decay rate and ηc\eta_{\rm c} parameters at KEDR

Using the inclusive photon spectrum based on a data sample collected at the $J/\psi$ peak with the KEDR detector at the VEPP-4M $e^+e^-$ collider, we measured the rate of the radiative decay $J/\psi\to\gamma\eta_{\rm c}$ as well as $\eta_{\rm c}$ mass and width. Taking into account an asymmetric photon lineshape we obtained $\Gamma^0_{\gamma\eta_{\rm c}}=2.98\pm0.18 \phantom{|}^{+0.15}_{-0.33}$ keV, $M_{\eta_{\rm c}} = 2983.5 \pm 1.4 \phantom{|}^{+1.6}_{-3.6}$ MeV/$c^2$, $\Gamma_{\eta_{\rm c}} = 27.2 \pm 3.1 \phantom{|}^{+5.4}_{-2.6}$ MeV.Comment: 6 pages, 3 figure

Precise measurement of RudsR_{\text{uds}} and RR between 1.84 and 3.72 GeV at the KEDR detector

The present work continues a series of the KEDR measurements of the $R$ value that started in 2010 at the VEPP-4M $e^+e^-$ collider. By combining new data with our previous results in this energy range we measured the values of $R_{\text{uds}}$ and $R$ at nine center-of-mass energies between 3.08 and 3.72 GeV. The total accuracy is about or better than $2.6\%$ at most of energy points with a systematic uncertainty of about $1.9\%$. Together with the previous precise $R$ measurement at KEDR in the energy range 1.84-3.05 GeV, it constitutes the most detailed high-precision $R$ measurement near the charmonium production threshold.Comment: arXiv admin note: text overlap with arXiv:1610.02827 and substantial text overlap with arXiv:1510.0266