A simple method for the Kramers-Kronig analysis of reflectance spectra measured with diamond anvil cell

When the optical reflectance spectrum of a sample under high pressure is studied with a diamond anvil cell, it is measured at a sample/diamond interface. Due to the large refractive index of diamond, the resulting reflectance Rd(w) may substantially differ from that measured in vacuum. To obtain optical constants from Rd(w), therefore, the usual Kramers-Kronig (KK) transform cannot be straightforwardly applied, and either a spectral fitting or a modified KK transform has been used. Here we describe an alternative method to perform KK analysis on Rd(w). This method relies on the usual KK transform with an appropriate cutoff and extrapolation to Rd(w), and may offer a simpler approach to obtain infrared conductivity from measured Rd(w).Comment: 6 pages, 2 figures, to appear in the Proceedings of 6th WIRMS Conference (J. Phys. Conf. Ser.

Multiorbital analysis of the effects of uniaxial and hydrostatic pressure on TcT_c in the single-layered cuprate superconductors

The origin of uniaxial and hydrostatic pressure effects on $T_c$ in the single-layered cuprate superconductors is theoretically explored. A two-orbital model, derived from first principles and analyzed with the fluctuation exchange approximation gives axial-dependent pressure coefficients, $\partial T_c/\partial P_a>0$, $\partial T_c/\partial P_c<0$, with a hydrostatic response $\partial T_c/\partial P>0$ for both La214 and Hg1201 cuprates, in qualitative agreement with experiments. Physically, this is shown to come from a unified picture in which higher $T_c$ is achieved with an "orbital distillation", namely, the less the $d_{x^2-y^2}$ main band is hybridized with the $d_{z^2}$ and $4s$ orbitals higher the $T_c$. Some implications for obtaining higher $T_c$ materials are discussed.Comment: 6pages, 4 figure

Interplay among critical temperature, hole content, and pressure in the cuprate superconductors

Within a BCS-type mean-field approach to the extended Hubbard model, a nontrivial dependence of T_c on the hole content per unit CuO_2 is recovered, in good agreement with the celebrated non-monotonic universal behaviour at normal pressure. Evaluation of T_c at higher pressures is then made possible by the introduction of an explicit dependence of the tight-binding band and of the carrier concentration on pressure P. Comparison with the known experimental data for underdoped Bi2212 allows to single out an `intrinsic' contribution to d T_c / d P from that due to the carrier concentration, and provides a remarkable estimate of the dependence of the inter-site coupling strength on the lattice scale.Comment: REVTeX 8 pages, including 5 embedded PostScript figures; other required macros included; to be published in Phys. Rev. B (vol. 54

Relaxation Effects in the Transition Temperature of Superconducting HgBa2CuO4+delta

In previous studies on a number of under- and overdoped high temperature superconductors, including YBa_{2}Cu_{3}O_{7-y} and Tl_{2}Ba_{2}CuO_{6+\delta}, the transition temperature T_c has been found to change with time in a manner which depends on the sample's detailed temperature and pressure history. This relaxation behavior in T_c is believed to originate from rearrangements within the oxygen sublattice. In the present high-pressure studies on HgBa_{2}CuO_{4+\delta} to 0.8 GPa we find clear evidence for weak relaxation effects in strongly under- and overdoped samples ($T_c\simeq 40 - 50 K$) with an activation energy $E_{A}(1 bar) \simeq 0.8 - 0.9 eV$. For overdoped HgBa_{2}CuO_{4+\delta} E_{A} increases under pressure more rapidly than previously observed for YBa_{2}Cu_{3}O_{6.41}, yielding an activation volume of +11 \pm 5 cm^{3}; the dependence of T_c on pressure is markedly nonlinear, an anomalous result for high-T_c superconductors in the present pressure range, giving evidence for a change in the electronic and/or structural properties near 0.4 GPa

A Microscopic View on the Mott transition in Chromium-doped V2O3

V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a paramagnetic insulator (PI). This or related MITs have a high technological potential, among others for intelligent windows and field effect transistors. However the spatial scale on which such transitions develop is not known in spite of their importance for research and applications. Here we unveil for the first time the MIT in Cr-doped V2O3 with submicron lateral resolution: with decreasing temperature, microscopic domains become metallic and coexist with an insulating background. This explains why the associated PM phase is actually a poor metal. The phase separation can be associated with a thermodynamic instability near the transition. This instability is reduced by pressure which drives a genuine Mott transition to an eventually homogeneous metallic state.Comment: Paper plus supplementary materia

Mott transition and transport crossovers in the organic compound κ−(BEDT−TTF)2Cu[N(CN)2]Cl\kappa-(BEDT-TTF)_2 Cu[N(CN)_2] Cl

We have performed in-plane transport measurements on the two-dimensional organic salt $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl. A variable (gas) pressure technique allows for a detailed study of the changes in conductivity through the insulator-to-metal transition. We identify four different transport regimes as a function of pressure and temperature (corresponding to insulating, semi-conducting, ''bad metal'', and strongly correlated Fermi liquid behaviours). Marked hysteresis is found in the transition region, which displays complex physics that we attribute to strong spatial inhomogeneities. Away from the critical region, good agreement is found with a dynamical mean-field calculation of transport properties using the numerical renormalization group technique.Comment: 4 pages, 6 figure