880 research outputs found

    Testing Spatial Noncommutativity via Magnetic Hyperfine Structure Induced by Fractional Angular Momentum of Rydberg System

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    An approach to solve the critical problem of testing quantum effects of spatial noncommutativity is proposed. Magnetic hyperfine structures in a Rydberg system induced by fractional angular momentum originated from spatial noncommutativity are discussed. The orders of the corresponding magnetic hyperfine splitting of spectrum ∼10−7−10−8eV\sim 10^{-7} - 10^{-8} eV lie within the limits of accuracy of current experimental measurements. Experimental tests of physics beyond the standard model are the focus of broad interest. We note that the present approach is reasonable achievable with current technology. The proof is based on very general arguments involving only the deformed Heisenberg-Weyl algebra and the fundamental property of angular momentum. Its experimental verification would constitute an advance in understanding of fundamental significance, and would be a key step towards a decisive test of spatial noncommutativity.Comment: 11 pages, no figure

    Crossover between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films

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    We report transport studies on the 5 nm thick Bi2Se3 topological insulator films which are grown via molecular beam epitaxy technique. The angle-resolved photoemission spectroscopy data show that the Fermi level of the system lies in the bulk conduction band above the Dirac point, suggesting important contribution of bulk states to the transport results. In particular, the crossover from weak antilocalization to weak localization in the bulk states is observed in the parallel magnetic field measurements up to 50 Tesla. The measured magneto-resistance exhibits interesting anisotropy with respect to the orientation of B// and I, signifying intrinsic spin-orbit coupling in the Bi2Se3 films. Our work directly shows the crossover of quantum interference effect in the bulk states from weak antilocalization to weak localization. It presents an important step toward a better understanding of the existing three-dimensional topological insulators and the potential applications of nano-scale topological insulator devices

    Test of Quantum Effects of Spatial Noncommutativity using Modified Electron Momentum Spectroscopy

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    The possibility of testing spatial noncommutativity by current experiments on normal quantum scales is investigated. For the case of both position-position and momentum-momentum noncommuting spectra of ions in crossed electric and magnetic fields are studied in the formalism of noncommutative quantum mechanics. In a limit of the kinetic energy approaching its lowest eigenvalue this system possesses non-trivial dynamics. Signals of spatial noncommutativity in the angular momentum are revealed. They are within limits of the measurable accuracy of current experiments. An experimental test of the predictions using a modified electron momentum spectrum is suggested. The related experimental sensitivity and subtle points are discussed. The results are the first step on a realizable way towards a conclusive test of spatial noncommutativity.Comment: 17 pages, no figur

    Epileptiform discharge upregulates p-ERK1/2, growth-associated protein 43 and synaptophysin in cultured rat hippocampal neurons

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    AbstractExtracellular signal-regulated protein kinase, ERK1/2 is activated by phosphorylation (p-ERK1/2) during environmental stress such as epileptiform discharge. We investigated the role of ERK1/2 in abnormal axon growth and synapse reorganization in cultured neurons displaying epileptiform activity.The cultured neurons displaying epileptiform activity were treated with magnesium-free extracellular fluid for 3h and monitored epileptiform discharges using whole-cell patch clamp. Two study groups, neurons displaying epileptiform activity and the same neurons treated with ERK1/2 inhibitor U0126, were studied at six time points, 0min, 30min, 2h, 6h, 12h, and 24h following discharge. The expressions of p-ERK1/2, C-fos, growth-associated protein 43 (GAP-43) and synaptophysin (SYP), as markers of axon growth and synapse reorganization, were investigated by double-label immunofluorescence and western blotting.In the neurons displaying epileptiform activity, p-ERK1/2 was detected immediately following discharge, and expression peaked at 30min. The expression of C-fos, GAP-43 and SYP followed the same pattern as p-ERK1/2. In the treated group, p-ERK1/2 was inhibited completely, and C-fos, GAP-43 and SYP were reduced.These findings indicate that epileptiform discharge activates ERK1/2 which regulates C-fos in cultured neurons displaying epileptiform activity, and this cascade may upregulate GAP-43 and SYP to contribute to axon growth and synapse reorganization to potentiate epileptic activities

    Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators

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    It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dual-gate structures on them. The films could be tuned between n-type and p-type by each gate alone. Combined application of two gates can reduce the carrier density of a TI film to a much lower level than with only one of them and enhance the film resistance by 10000 %, implying that Fermi level is tuned very close to the Dirac points of both top and bottom surface states without crossing any bulk band. The result promises applications of 3D TIs in field effect devices.Comment: 19 pages, 4 figures, accepted by Nano Letters, forthcomin

    Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two dimensional limit

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    We report a transport study of ultrathin Bi2Se3 topological insulators with thickness from one quintuple layer to six quintuple layers grown by molecular beam epitaxy. At low temperatures, the film resistance increases logarithmically with decreasing temperature, revealing an insulating ground state. The sharp increase of resistance with magnetic field, however, indicates the existence of weak antilocalization, which should reduce the resistance as temperature decreases. We show that these apparently contradictory behaviors can be understood by considering the electron interaction effect, which plays a crucial role in determining the electronic ground state of topological insulators in the two dimensional limit.Comment: 4 figure
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