Possibilities of using the ultrasonic wave transmission method to estimate initial setting time of cement paste

In this paper, the applicability of the ultrasonic wave transmission method to estimate the initial setting time of an arbitrary cement paste is discussed. Ultrasonic pulse velocity measurements were fully automated and measured continuously. The Vicar Needle Test was used in order to determine the initial setting time of cement pastes. Different cement pastes were prepared in order to check the influence of the water/cement ratio, type of cement, curing temperature, cement fineness, and some clinker compositions, on the relationship between the initial setting time and ultrasonic pulse velocity. It was found that the initial setting time of an arbitrary cement paste can be estimated very accurately by the time the first inflection point appears on the ultrasonic pulse velocity curve. Moreover, it can be estimated quite accurately by the time the ultrasonic pulse velocity reaches a fixed value, close to the value of the ultrasonic pulse velocity in water

High-resolution x-ray-emission study of 1s4p and 1s3d two-electron photoexcitations in Kr

High-energy-resolution photoexcited KN2,3 x-ray-emission measurements were carried out on krypton with the excitation energy tuned around the 1s4p and 1s3d double-excitation thresholds. Comprehensive two-dimensional resonant inelastic x-ray-scattering maps were recorded for the range of excitation and emission energies corresponding to both types of double excitations. The double-excitation signal could be clearly resolved from the dominant 1s ionization signal. The latter was subtracted from the measured maps, yielding isolated 1s4p and 1s3d photoexcitation spectra. Both two-electron excitation spectra are well described by a model spectrum built of consecutive bound-bound discrete transitions and shake-up and shake-off channels giving precise energies and intensities of the corresponding contributions. The obtained results are compared with other existing experimental values based on x-ray-absorption measurements and theoretical predictions

Double K-shell photoionization of low-Z atoms and He-like ions

We report on the investigation of the photon energy dependence of double 1s photoionization of light atoms and compare the cross sections for hollow atom and He-like ion production. Measurements of the Kα hypersatellite x-ray spectra of Mg, Al, and Si were carried out using the Fribourg high-resolution x-ray spectrometer installed at the ID21 and ID26 beam lines at the ESRF. The double-to-single photoionization cross section ratios were derived as a function of the incident photon beam energy and compared to convergent close-coupling (CCC) calculations for He-like ions. The dynamical electron-electron scattering contribution to the DPI cross-sections was found to be more important for neutral atoms than for the He isoelectronic serie

Two-to-one Auger decay of a double L vacancy in argon

We have observed L223−M3 Auger decay in argon where a double vacancy is filled by two valence electrons and a single electron is ejected from the atom. A well-resolved spectrum of these two-to-one electron transitions is compared to the result of the second-order perturbation theory and its decay branching ratio is determined

Potential Energy Surface Reconstruction and Lifetime Determination of Molecular Double-Core-Hole States in the Hard X-Ray Regime

A combination of resonant inelastic x-ray scattering and resonant Auger spectroscopy provides complementary information on the dynamic response of resonantly excited molecules. This is exemplified for CH3I, for which we reconstruct the potential energy surface of the dissociative I 3d−2 double- core-hole state and determine its lifetime. The proposed method holds a strong potential for monitoring the hard x-ray induced electron and nuclear dynamic response of core-excited molecules containing heavy elements, where ab initio calculations of potential energy surfaces and lifetimes remain challenging

Організаційно-економічне забезпечення розвитку електронної промисловості

Розкрито питання організаційно-економічного забезпечення електронної промисловості в рамках організаційно-економічного механізму розвитку електронної промисловості на інноваційній основі, який регламентує діяльність державних, галузевих і підприємницьких структур, що забезпечують розвиток електронної промисловості. Ключові слова: електронна промисловість, організаційне забезпечення розвитку електронної промисловості, організаційно-економічний механізм, інноваційний розвиток.  Раскрываются вопросы организационно-экономического обеспечения электронной промышленности в рамках организационно-экономического механизма развития электронной промышленности на инновационной основе, который регламентирует деятельность государственных, отраслевых и предпринимательских структур, обеспечивающих развитие электронной промышленности. Ключевые слова: электронная промышленность, организационное обеспечение развития электронной промышленности, организационно-экономический механизм, инновационное развитие.  The paper deals with the issues of organizational and economic support of electronic industry in the framework of the organizational and economic mechanism of the above industry development on the basis of innovation. It regulates the activities of the government, sectoral and business organizations, which provide the development of the electronic industry. The proposalsare as follows: to work out a State Program of Development of the Electronic Industry, andto create a sectoral information system, a cluster “development of the electronic industry”, holding the electronic industry, a sectoral technology transfer system, training educational and scientific centres for the engineering staff. It is shown that at a corporate level the development of electronic industry is promoted by establishment of production facilities with the use of well-known brands and foreign electronic productions, technologies transfer with consideration of supply channels, introduction of business market mechanisms, IPC standards, and production information systems PDM/PLM. A specific feature of these measures is that to develop the issues of financial and economic, technical and technological, innovation and market support of the electronic industry development the methods of grouping, generalization of economic indicators received from the enterprises of this industry, and economic mathematical modelling using a correlation regression and structural logical analysis have been used. The application of these methods suggests that the use of the organizational and economic support contributes to promising development of the electronic industry in Ukraine which consists in formation of the core of the electronic industry and its integration in the world electronic space in the future. Keywords: electronic industry, organizational support of electronic industry development, organizational and economic mechanism, innovation-based development

Application of the high-resolution grazing-emission x-ray fluorescence method for impurities control in semiconductor nanotechnology

We report on the application of synchrotron radiation based high-resolution grazing-emission x-ray fluorescence (GEXRF) method to measure low-level impurities on silicon wafers. The presented high-resolution GEXRF technique leads to direct detection limits of about 10¹²  atoms/cm². The latter can be presumably further improved down to 10⁷  atoms/cm² by combining the synchrotron radiation-based GEXRF method with the vapor phase decomposition preconcentration technique. The capability of the high-resolution GEXRF method to perform surface-sensitive elemental mappings with a lateral resolution of several tens of micrometers was probed