Monte-Carlo simulation of the coherent backscattering of electrons in a ballistic system

We study weak localization effects in the ballistic regime as induced by man-made scatterers. Specular reflection of the electrons off these scatterers results into backscattered trajectories which interfere with their time-reversed path resulting in weak localization corrections to the resistance. Using a semi-classical theory, we calculate the change in resistance due to these backscattered trajectories. We found that the inclusion of the exact shape of the scatterers is very important in order to explain the experimental results of Katine et al. [Superlattices and Microstructures 20, 337 (1996)].Comment: 3 pages, 7 ps figures, accepted for publication in Superlattices and Microstructure

Current-induced Pinwheel Oscillations in Perpendicular Magnetic Anisotropy Spin Valve Nanopillars

Nanopillar spin valve devices are typically comprised of two ferromagnetic layers: a reference layer and a free layer whose magnetic orientation can be changed by both an external magnetic field and through the introduction of spin-polarized electric current. Here we report the continuous repeated switching behavior of both the reference and free layers of a perpendicular spin valve made of Co/Pd and Co/Ni multilayers that arises for sufficiently large DC currents. This periodic switching of the two layers produces an oscillating signal in the MHz regime but is only observed for one sign of the applied current. The observed behavior agrees well with micromagnetic simulations

Detection of spin torque magnetization dynamics through low frequency noise

We present a comparative study of high frequency dynamics and low frequency noise in elliptical magnetic tunnel junctions with lateral dimensions under 100 nm presenting current-switching phenomena. The analysis of the high frequency oscillation modes with respect to the current reveals the onset of a steady-state precession regime for negative bias currents above $J=10^7 A/cm^2$, when the magnetic field is applied along the easy axis of magnetization. By the study of low frequency noise for the same samples, we demonstrate the direct link between changes in the oscillation modes with the applied current and the normalised low frequency (1/f) noise as a function of the bias current. These findings prove that low frequency noise studies could be a simple and powerful technique to investigate spin-torque based magnetization dynamics

Thermal Effects on the Magnetic Field Dependence of Spin Transfer Induced Magnetization Reversal

We have developed a self-aligned, high-yield process to fabricate CPP (current perpendicular to the plane) magnetic sensors of sub 100 nm dimensions. A pinned synthetic antiferromagnet (SAF) is used as the reference layer which minimizes dipole coupling to the free layer and field induced rotation of the reference layer. We find that the critical currents for spin transfer induced magnetization reversal of the free layer vary dramatically with relatively small changes the in-plane magnetic field, in contrast to theoretical predictions based on stability analysis of the Gilbert equations of magnetization dynamics including Slonczewski-type spin-torque terms. The discrepancy is believed due to thermal fluctuations over the time scale of the measurements. Once thermal fluctuations are taken into account, we find good quantitative agreement between our experimental results and numerical simulations.Comment: 14 pages, 4 figures, Submitted to Appl. Phys. Lett., Comparison of some of these results with a model described by N. Smith in cond-mat/040648

Time Domain Mapping of Spin Torque Oscillator Effective Energy

Stochastic dynamics of spin torque oscillators (STOs) can be described in terms of magnetization drift and diffusion over a current-dependent effective energy surface given by the Fokker-Planck equation. Here we present a method that directly probes this effective energy surface via time-resolved measurements of the microwave voltage generated by a STO. We show that the effective energy approach provides a simple recipe for predicting spectral line widths and line shapes near the generation threshold. Our time domain technique also accurately measures the field-like component of spin torque in a wide range of the voltage bias values.Comment: 5 pages, 3 figures. Supplement included: 7 pages, 6 figure

Spin transfer switching of spin valve nanopillars using nanosecond pulsed currents

Spin valve nanopillars are reversed via the mechanism of spin momentum transfer using current pulses applied perpendicular to the film plane of the device. The applied pulses were varied in amplitude from 1.8 mA to 7.8 mA, and varied in duration within the range of 100 ps to 200 ns. The probability of device reversal is measured as a function of the pulse duration for each pulse amplitude. The reciprocal pulse duration required for 95% reversal probability is linearly related to the pulse current amplitude for currents exceeding 1.9 mA. For this device, 1.9 mA marks the crossover between dynamic reversal at larger currents and reversal by thermal activation for smaller currents

Spin torque ferromagnetic resonance with magnetic field modulation

We demonstrate a technique of broadband spin torque ferromagnetic resonance (ST-FMR) with magnetic field modulation for measurements of spin wave properties in magnetic nanostructures. This technique gives great improvement in sensitivity over the conventional ST-FMR measurements, and application of this technique to nanoscale magnetic tunnel junctions (MTJs) reveals a rich spectrum of standing spin wave eigenmodes. Comparison of the ST-FMR measurements with micromagnetic simulations of the spin wave spectrum allows us to explain the character of low-frequency magnetic excitations in nanoscale MTJs.Comment: Also see: http://faculty.sites.uci.edu/krivorotovgroup

Bimodal switching field distributions in all-perpendicular spin-valve nanopillars

Switching field measurements of the free layer element of 75 nm diameter spin-valve nanopillars reveal a bimodal distribution of switching fields at low temperatures (below 100 K). This result is inconsistent with a model of thermal activation over a single perpendicular anisotropy barrier. The correlation between antiparallel to parallel and parallel to antiparallel switching fields increases to nearly 50% at low temperatures. This reflects random fluctuation of the shift of the free layer hysteresis loop between two different magnitudes, which may originate from changes in the dipole field from the polarizing layer. The magnitude of the loop shift changes by 25% and is correlated to transitions of the spin-valve into an antiparallel configuration.Comment: 3 pages, 4 figures. Submitted to JAP for 58th MMM Proceeding