Phase stability, ordering tendencies, and magnetism in single-phase fcc Au-Fe nanoalloys

Bulk Au-Fe alloys separate into Au-based fcc and Fe-based bcc phases, but L1$_0$ and L1$_2$ orderings were reported in single-phase Au-Fe nanoparticles. Motivated by these observations, we study the structural and ordering energetics in this alloy by combining density functional theory (DFT) calculations with effective Hamiltonian techniques: a cluster expansion with structural filters, and the configuration-dependent lattice deformation model. The phase separation tendency in Au-Fe persists even if the fcc-bcc decomposition is suppressed. The relative stability of disordered bcc and fcc phases observed in nanoparticles is reproduced, but the fully ordered L1$_0$ AuFe, L1$_2$ Au$_3$Fe, and L1$_2$ AuFe$_3$ structures are unstable in DFT. However, a tendency to form concentration waves at the corresponding [001] ordering vector is revealed in nearly-random alloys in a certain range of concentrations. This incipient ordering requires enrichment by Fe relative to the equiatomic composition, which may occur in the core of a nanoparticle due to the segregation of Au to the surface. Effects of magnetism on the chemical ordering are also discussed.Comment: 23 pages, 11 figure

Influence of the heterointerface sharpness on exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap

The dynamics of exciton recombination in an ensemble of indirect band-gap (In,Al)As/AlAs quantum dots with type-I band alignment is studied. The lifetime of confined excitons which are indirect in momentum-space is mainly influenced by the sharpness of the heterointerface between the (In,Al)As quantum dot and the AlAs barrier matrix. Time-resolved photoluminescence experiments and theoretical model calculations reveal a strong dependence of the exciton lifetime on the thickness of the interface diffusion layer. The lifetime of excitons with a particular optical transition energy varies because this energy is obtained for quantum dots differing in size, shape and composition. The different exciton lifetimes, which result in photoluminescence with non-exponential decay obeying a power-law function, can be described by a phenomenological distribution function, which allows one to explain the photoluminescence decay with one fitting parameter only.Comment: 10 pages, 7 figure

Extra Spin-Wave mode in Quantum Hall systems. Beyond the Skyrmion Limit

We report on the observation of a new spin mode in a quantum Hall system in the vicinity of odd electron filling factors under experimental conditions excluding the possibility of Skyrmion excitations. The new mode having presumably zero energy at odd filling factors emerges at small deviations from odd filling factors and couples to the spin-exciton. The existence of an extra spin mode assumes a nontrivial magnetic order at partial fillings of Landau levels surrounding quantum Hall ferromagnets other then the Skyrmion crystal.Comment: 9 pages, 4 figure

Interplay of the exciton and electron-hole plasma recombination on the photoluminescence dynamics in bulk GaAs

We present a systematic study of the exciton/electron-hole plasma photoluminescence dynamics in bulk GaAs for various lattice temperatures and excitation densities. The competition between the exciton and electron-hole pair recombination dominates the onset of the luminescence. We show that the metal-to-insulator transition, induced by temperature and/or excitation density, can be directly monitored by the carrier dynamics and the time-resolved spectral characteristics of the light emission. The dependence on carrier density of the photoluminescence rise time is strongly modified around a lattice temperature of 49 K, corresponding to the exciton binding energy (4.2 meV). In a similar way, the rise-time dependence on lattice temperature undergoes a relatively abrupt change at an excitation density of 120-180x10^15 cm^-3, which is about five times greater than the calculated Mott density in GaAs taking into account many body corrections.Comment: 15 pages, 7 figures, submitted to Phys. Rev.

Diffusion and Deformations in Heterosystems with GaN/AlN Superlattices, According to Data from EXAFS Spectroscopy

Multilayered samples with extremely narrow GaN quantum wells in an AlN host are synthesized via ammonia MBE. The parameters of the microstructu re are determined by means of EXAFS spectroscopy, high-resolution electron microscopy, and low-angle sc attering. Their relationship to the morphology of GaN/AlN superlattices is established. The influence of growth conditions and the thickness of superlattices on their optical properties and mixing in the near-boundary layers is established

Ferroelectric Dead Layer Driven by a Polar Interface

Based on first-principles and model calculations we investigate the effect of polar interfaces on the ferroelectric stability of thin-film ferroelectrics. As a representative model, we consider a TiO2-terminated BaTiO3 film with LaO monolayers at the two interfaces that serve as doping layers. We find that the polar interfaces create an intrinsic electric field that is screened by the electron charge leaking into the BaTiO3 layer. The amount of the leaking charge is controlled by the boundary conditions which are different for three heterostructures considered, namely Vacuum/LaO/BaTiO3/LaO, LaO/BaTiO3, and SrRuO3/LaO/BaTiO3/LaO. The intrinsic electric field forces ionic displacements in BaTiO3 to produce the electric polarization directed into the interior of the BaTiO3 layer. This creates a ferroelectric dead layer near the interfaces that is non-switchable and thus detrimental to ferroelectricity. Our first-principles and model calculations demonstrate that the effect is stronger for a larger effective ionic charge at the interface and longer screening length due to a stronger intrinsic electric field that penetrates deeper into the ferroelectric. The predicted mechanism for a ferroelectric dead layer at the interface controls the critical thickness for ferroelectricity in systems with polar interfaces.Comment: 33 Pages, 5 figure

Nonperturbative Scaling Theory of Free Magnetic Moment Phases in Disordered Metals

The crossover between a free magnetic moment phase and a Kondo phase in low dimensional disordered metals with dilute magnetic impurities is studied. We perform a finite size scaling analysis of the distribution of the Kondo temperature as obtained from a numerical renormalization group calculation of the local magnetic susceptibility and from the solution of the self-consistent Nagaoka-Suhl equation. We find a sizable fraction of free (unscreened) magnetic moments when the exchange coupling falls below a disorder-dependent critical value $J_{\rm c}$. Our numerical results show that between the free moment phase due to Anderson localization and the Kondo screened phase there is a phase where free moments occur due to the appearance of random local pseudogaps at the Fermi energy whose width and power scale with the elastic scattering rate $1/\tau$.Comment: 4 pages, 6 figure

Anomalous behaviors of the charge and spin degrees of freedom in the CuO double chains of PrBa2_2Cu4_4O8_8

The density-matrix renormalization-group method is used to study the electronic states of a two-chain Hubbard model for CuO double chains of PrBa$_2$Cu$_4$O$_8$. We show that the model at quarter filling has the charge ordered phases with stripe-type and in-line--type patterns in the parameter space, and in-between, there appears a wide region of vanishing charge gap; the latter phase is characteristic of either Tomonaga-Luttinger liquid or a metallic state with a spin gap. We argue that the low-energy electronic state of the CuO double chains of PrBa$_2$Cu$_4$O$_8$ should be in the metallic state with a possibly small spin gap.Comment: REVTEX 4, 10 pages, 9 figures; submitted to PR

Influence of Trapping on the Exciton Dynamics of Al_xGa_1-xAs Films

We present a systematic study on the exciton relaxation in high purity AlGaAs epilayers. The time for the excitonic photoluminescence to reach its maximum intensity (t_max) shows a non-monotonic dependence on excitation density which is attributed to a competition between exciton localization and carrier-carrier scattering. A phenomenological four level model fully describes the influence of exciton localization on t_max. This localization effect is enhanced by the increase of the Al content in the alloy and disappears when localization is hindered by rising the lattice temperature above the exciton trapping energy.Comment: 4 pages, 3 figures, 16 ref