Preimplantation genetic testing for neurobehavioral traits

Differences in behavioral and mental health traits result from unique interactions of genetic and environmental factors. Genetic information has improved along with technological advancements allowing for more data points to be established and increased data resolution. Because of this, there is a greater ability to identify embryos that carry genetic risk. The approach of Preimplantation Genetic Testing (PGT) is routine for certain genetic diseases but has not been widely used for psychiatric or behavioral traits. This paper critically examines the potential application of PGT-P by focusing on one main example, Alzheimer’s disease (AD). AD is the most prevalent form of dementia and is a well-studied example of pleiotropic genes that influences observable behaviors such as short term memory, judgment, and problem-solving. This disorder is relatively untreatable and genetically heritable which makes it a desirable candidate for PGT-P. This paper will describe specific risk genes involved in AD, the nature and availability of genetic risk estimates, and the ethical considerations in PGT for behavioral traits. I conclude progress in genetics research will make PGT an effective way to reduce suffering from mental health outcomes and will increase in prevalence along with government regulation and accessibility of genetic counselors. Significant obstacles include making decisions based on complex and probabilistic genetic risk estimates and ethical objections to artificial selection

Development of High-Performance Detector Technology for UV and IR Applications

Sensing and imaging for ultraviolet (UV) and infrared (IR) bands has many applications for NASA, defense, and commercial systems. Recent work has involved developing UV avalanche photodiode (UVAPD) arrays with high gain for high resolution imaging. Various GaN/AlGaN p-i-n UV-APDs have been fabricated from epitaxial structures grown by metalorganic chemical vapor deposition (MOCVD) on GaN substrates with avalanche gains greater than 5105, and high responsivities. Similarly, the IR spectral band is useful for measuring ocean temperatures, atmospheric aerosols, forest fires, etc. We are also developing room temperature operating graphene-enhanced PbSe midwave infrared (MWIR) detectors and focal plane arrays (FPAs). These compact and low-cost MWIR sensors can benefit various NASA remote sensing applications. Here we present recent results from these high performance UV- and IR-band detector and FPA technologies

Single Pion production from Nuclei

We have studied charged current one pion production induced by $\nu_\mu(\bar\nu_\mu)$ from some nuclei. The calculations have been done for the incoherent pion production processes from these nuclear targets in the $\Delta$ dominance model and take into account the effect of Pauli blocking, Fermi motion and renormalization of $\Delta$ properties in the nuclear medium. The effect of final state interactions of pions has also been taken into account. The numerical results have been compared with the recent results from the MiniBooNE experiment for the charged current 1$\pi$ production, and also with some of the older experiments in Freon and Freon-Propane from CERN.Comment: 5 pages, 5 figures, 5th International Workshop on Neutrino-Nucleus Interactions in the few GeV region(NuInt07), Batavia, Illinois, 30May-3June, 200

Cd-vacancy and Cd-interstitial complexes in Si and Ge

The electrical field gradient (EFG), measured e.g. in perturbed angular correlation (PAC) experiments, gives particularly useful information about the interaction of probe atoms like 111In / 111Cd with other defects. The interpretation of the EFG is, however, a difficult task. This paper aims at understanding the interaction of Cd impurities with vacancies and interstitials in Si and Ge, which represents a controversial issue. We apply two complementary ab initio methods in the framework of density functional theory (DFT), (i) the all electron Korringa-Kohn-Rostoker (KKR) Greenfunction method and (ii) the Pseudopotential-Plane-Wave (PPW) method, to search for the correct local geometry. Surprisingly we find that both in Si and Ge the substitutional Cd-vacancy complex is unstable and relaxes to a split-vacancy complex with the Cd on the bond-center site. This complex has a very small EFG, allowing a unique assignment of the small measured EFGs of 54MHz in Ge and 28MHz in Si. Also, for the Cd-selfinterstitial complex we obtain a highly symmetrical split configuration with large EFGs, being in reasonable agreement with experiments

Real space first-principles derived semiempirical pseudopotentials applied to tunneling magnetoresistance

In this letter we present a real space density functional theory (DFT) localized basis set semi-empirical pseudopotential (SEP) approach. The method is applied to iron and magnesium oxide, where bulk SEP and local spin density approximation (LSDA) band structure calculations are shown to agree within approximately 0.1 eV. Subsequently we investigate the qualitative transferability of bulk derived SEPs to Fe/MgO/Fe tunnel junctions. We find that the SEP method is particularly well suited to address the tight binding transferability problem because the transferability error at the interface can be characterized not only in orbital space (via the interface local density of states) but also in real space (via the system potential). To achieve a quantitative parameterization, we introduce the notion of ghost semi-empirical pseudopotentials extracted from the first-principles calculated Fe/MgO bonding interface. Such interface corrections are shown to be particularly necessary for barrier widths in the range of 1 nm, where interface states on opposite sides of the barrier couple effectively and play a important role in the transmission characteristics. In general the results underscore the need for separate tight binding interface and bulk parameter sets when modeling conduction through thin heterojunctions on the nanoscale.Comment: Submitted to Journal of Applied Physic

SLoMo: automated site localization of modifications from ETD/ECD mass spectra

Recently, software has become available to automate localization of phosphorylation sites from CID data and to assign associated confidence scores. We present an algorithm, SLoMo (Site Localization of Modifications), which extends this capability to ETD/ECD mass spectra. Furthermore, SLoMo caters for both high and low resolution data and allows for site-localization of any UniMod post-translational modification. SLoMo accepts input data from a variety of formats (e.g., Sequest, OMSSA). We validate SLoMo with high and low resolution ETD, ECD, and CID data

GaN/AlGaN Avalanche Photodiode Detectors for High Performance Ultraviolet Sensing Applications

The shorter wavelengths of the ultraviolet (UV) band enable detectors to operate with increased spatial resolution, variable pixel sizes, and large format arrays, benefitting a variety of NASA, defense, and commercial applications. AlxGa1-xN semiconductor alloys, which have attracted much interest for detection in the UV spectral region, have been shown to enable high optical gains, high sensitivities with the potential for single photon detection, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs with large pixel sizes that demonstrate consistent and uniform device performance and operation. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized material growth and doping parameters. The use of these low defect density substrates is a critical element to realizing highly sensitive UV-APDs and arrays with suppressed dark current under high electric fields.Optical gains greater than 5X10 (exp 6) with enhanced quantum efficiencies over the 350-400 nm spectral range have been demonstrated, enabled by a strong avalanche multiplication process. Furthermore, we are developing 6X6 arrays of devices to test high gain UV-APD array performance at ~355 nm. These variable-area GaN/AlGaN UV-APD detectors and arrays enable advanced sensing performance over UV bands of interest with high resolution detection for NASA Earth Science applications

Development of High-Performance Graphene-HgCdTe Detector Technology for Mid-Wave Infrared Applications

A high-performance graphene-based HgCdTe detector technology is being developed for sensing over the mid-wave infrared (MWIR) band for NASA Earth Science, defense, and commercial applications. This technology involves the integration of graphene into HgCdTe photodetectors that combines the best of both materials and allows for higher MWIR(2-5 m) detection performance compared to photodetectors using only HgCdTe material. The interfacial barrier between the HgCdTe-based absorber and the graphene layer reduces recombination of photogenerated carriers in the detector. The graphene layer also acts as high mobility channel that whisks away carriers before they recombine, further enhancing the detector performance. Likewise, HgCdTe has shown promise for the development of MWIR detectors with improvements in carrier mobility and lifetime. The room temperature operational capability of HgCdTe-based detectors and arrays can help minimize size, weight, power and cost for MWIR sensing applications such as remote sensing and earth observation, e.g., in smaller satellite platforms. The objective of this work is to demonstrate graphene-based HgCdTe room temperature MWIR detectors and arrays through modeling, material development, and device optimization. The primary driver for this technology development is the enablement of a scalable, low cost, low power, and small footprint infrared technology component that offers high performance, while opening doors for new earth observation measurement capabilities