Generalized strain-based finite element for non-linear stability analysis of beams with thin-walled open cross-section

Based on the generalized strain theory a shear-deformable finite element is developed for nonlinear stability analysis of thin-walled open-section beams in multibody systems. In this formulation a finite number of deformations, characterized as generalized strains, is defined which are related to dual stress resultants in a co-rotational frame. The stiffness formulation is based on a second-order approximation of the local elastic displacement field. Timoshenko's beam theory and Vlasov's modified thin-walled beam theory are used to include the shear strain effects due to non-uniform bending and restrained warping torsion and their mutual coupling effects. Axial shortening associated with the Wagner Hypothesis is taken into account such that the nonlinear behaviour of the beam is predicted accurately, especially under large torsion. Coupling between bending and torsional deformation due to non-coincident centroid and shear centre is modelled using a second-order cross-section transformation matrix. Cubic Hermitian polynomials are used as shape functions for the lateral displacements and twist rotation to derive the elastic and geometric stiffness matrices. Geometric nonlinearities associated with axial elongation and bending curvatures are described by additional torsion, bending and warping-related quadratic deformation terms yielding a set of modified deformations. The inertia properties of the beam are described using both consistent and lumped mass formulations. The latter is used to model rotary and warping inertias of the beam cross-section. The accuracy and the computational efficiency of the new beam element is demonstrated in several static and dynamic examples.</p

Epitaxial Growth of an n-type Ferromagnetic Semiconductor CdCr2Se4 on GaAs(001) and GaP(001)

We report the epitaxial growth of CdCr2Se4, an n-type ferromagnetic semiconductor, on both GaAs and GaP(001) substrates, and describe the structural, magnetic and electronic properties. Magnetometry data confirm ferromagnetic order with a Curie temperature of 130 K, as in the bulk material. The magnetization exhibits hysteretic behavior with significant remanence, and an in-plane easy axis with a coercive field of ~125 Oe. Temperature dependent transport data show that the films are semiconducting in character and n-type as grown, with room temperature carrier concentrations of n ~ 1 x 10^18 cm-3.Comment: 12 pages, 3 figure

Temperature dependent asymmetry of the nonlocal spin-injection resistance: evidence for spin non-conserving interface scattering

We report nonlocal spin injection and detection experiments on mesoscopic Co-Al2O3-Cu spin valves. We have observed a temperature dependent asymmetry in the nonlocal resistance between parallel and antiparallel configurations of the magnetic injector and detector. This strongly supports the existence of a nonequilibrium resistance that depends on the relative orientation of the detector magnetization and the nonequilibrium magnetization in the normal metal providing evidence for increasing interface spin scattering with temperature.Comment: 5 pages, 4 figures, accepted for publication in PRL, minor corrections (affiliation, acknowledgements, typo