Macroscopic and microscopic studies of electrical properties of very thin silicon dioxide subject to electrical stress

The electrical characteristics of various size tunnel switch diode devices, composed of Al/SiO2/n-Si/p+-Si layers, which operate with a range of parameters (such as current densities in excess of 104 A/cm2) that stress the oxide layer far beyond the levels used in typical thin oxide metal-oxide semiconductor research have been examined. It is found that the first time a large current and electric field are applied to the device, a "forming" process enhances transport through the oxide in the vicinity of the edges of the gate electrode, but the oxide still retains its integrity as a tunnel barrier. The device operation is relatively stable to stresses of greater than 107 C/cm2 areally averaged, time-integrated charge injection. Duplication and characterization of these modified oxide tunneling properties was attempted using scanning tunneling microscopy (STM) to stress and probe the oxide. Electrical stressing with the STM tip creates regions of reduced conductivity, possibly resulting from trapped charge in the oxide. Lateral variations in the conductivity of the unstressed oxide over regions roughly 20–50 nm across were also found

Virtual audio reproduced in a headrest

When virtual audio reproduction is simultaneously required in many seats, such as in aircraft or cinemas, it may be convenient to use loudspeakers mounted inside each seat's headrest. In this preliminary study, the feasibility of virtual audio reproduction in the headrest of a single seat is explored using an inversion technique to compensate for crosstalk and the synthesis of head related transfer functions. Although large changes in the magnitude of the signals reproduced at the listener's ears are observed as the listener moves their head within the headrest, informal listening tests indicate that the reproduced acoustic images are surprisingly stable in about an eighth of an arc either side of the loudspeaker positions. Not surprisingly, frontal images are more difficult to reproduce with headrest loudspeakers

Rapid Thermal Processing (RTP) of semiconductors in space

The progress achieved on the project entitled 'Rapid Thermal Processing of Semiconductors in Space' for a 12 month period of activity ending March 31, 1993 is summarized. The activity of this group is being performed under the direct auspices of the ROMPS program. The main objective of this program is to develop and demonstrate the use of advanced robotics in space with rapid thermal process (RTP) of semiconductors providing the test technology. Rapid thermal processing is an ideal processing step for demonstration purposes since it encompasses many of the characteristics of other processes used in solid state device manufacturing. Furthermore, a low thermal budget is becoming more important in existing manufacturing practice, while a low thermal budget is critical to successful processing in space. A secondary objective of this project is to determine the influence of microgravity on the rapid thermal process for a variety of operating modes. In many instances, this involves one or more fluid phases. The advancement of microgravity processing science is an important ancillary objective

Six-loop divergences in the supersymmetric Kahler sigma model

The two-dimensional supersymmetric \s-model on a K\"ahler manifold has a non-vanishing \b-function at four loops, but the \b-function at five loops can be made to vanish by a specific choice of renormalisation scheme. We investigate whether this phenomenon persists at six loops, and conclude that it does not; there is a non-vanishing six-loop \b-function irrespective of renormalisation scheme ambiguities.Comment: 13pp, uses phyzzx, LTH 287 (published in Int. J. Mod. Phys. A

Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy

Using electron beam evaporation, a Si/CeO2/Si(111) structure has been grown in a molecular beam epitaxy machine. In situ low energy electron diffraction, cross sectional transmission electron microscopy, selected area diffraction, and atomic force microscopy have been used to structurally characterize the overlying silicon layer and show it to be single crystalline and epitaxially oriented. Rutherford backscattering and energy dispersive x-ray analysis have been used to confirm the presence of a continuous 23 Å CeO2 layer at the interface. Rutherford backscattering and x-ray photoemission spectroscopy show an additional presence of cerium both at the exposed silicon surface and incorporated in low levels (~ 1%) within the silicon film, suggesting a growth mechanism with cerium riding atop the silicon growth front leaving behind small amounts of cerium incorporated in the growing silicon crystal

Quantum Non-abelian Toda Field Theories

We derive an explicit, exactly conformally invariant form for the action for the non-abelian Toda field theory. We demonstrate that the conformal invariance conditions, expressed in terms of the $\beta$-functions of the theory, are satisfied to all orders, and we use our results to obtain a value for the central charge agreeing with previous calculations.Comment: 28pp, harvmac (choose "b" option

Cosmic ray diffusion: Report of the Workshop in Cosmic Ray Diffusion Theory

A workshop in cosmic ray diffusion theory was held at Goddard Space Flight Center on May 16-17, 1974. Topics discussed and summarized are: (1) cosmic ray measurements as related to diffusion theory; (2) quasi-linear theory, nonlinear theory, and computer simulation of cosmic ray pitch-angle diffusion; and (3) magnetic field fluctuation measurements as related to diffusion theory

Quasi-linear theory via the cumulant expansion approach

The cumulant expansion technique of Kubo was used to derive an intergro-differential equation for f , the average one particle distribution function for particles being accelerated by electric and magnetic fluctuations of a general nature. For a very restricted class of fluctuations, the f equation degenerates exactly to a differential equation of Fokker-Planck type. Quasi-linear theory, including the adiabatic assumption, is an exact theory for this limited class of fluctuations. For more physically realistic fluctuations, however, quasi-linear theory is at best approximate

Precessing Jets and Molecular Outflows: A 3-D Numerical Study

We present 3-D numerical hydrodynamical simulations of precessing supersonic heavy jets to explore how well they serve as a model for generating molecular outflows from Young Stellar Objects. The dynamics are studied with a number of high resolution simulations on a Cartesian grid (128x128x128 zones) using a high order finite difference method. A range of cone angles and precession rates were included in the study. Two higher resolution runs (256x256x256 zones) were made for comparison in order to confirm numerical convergence of global flow characteristics. Morphological, kinematical and dynamical characteristics of precessing jets are described and compared to important properties of straight jets and also to observations of YSOs. In order to examine the robustness of precessing jets as a mean to produce molecular outflows around Young Stellar Objects, ``synthetic observations'' of the momentum distributions of the simulated precessing jets are compared to observations of molecular outflows. It is found that precessing jets match better the morphology, highly forward driven momentum and momentum distributions along the long axis of molecular outflows than do wind-driven or straight jet-driven flow models.Comment: Accepted by ApJ, 31 pages, using aasms.sty, Also available in postscript with figures via a gzipped tar file at ftp://s1.msi.umn.edu/pub/afrank/3DJet/3DJet.tar.gz . For information contact [email protected]