Electron supersurface scattering on polycrystalline Au

Supersurface electron scattering, i.e., electron energy losses and associated deflections in vacuum above the surface of a medium, is shown to contribute significantly to electron spectra. We have obtained experimental verification (in absolute units) of theoretical predictions that the angular distribution of the supersurface backscattering probability exhibits strong oscillations which are anticorrelated with the generalized Ramsauer-Townsend minima in the backscattering probability. We have investigated 500-eV electron backscattering from an Au surface for an incidence angle of 70° and scattering angles between 37° and 165°. After removing the contribution of supersurface scattering from the experimental data, the resulting angular and energy distribution agrees with the Landau-Goudsmit-Saunderson (LGS) theory, which was proposed about 60 years ago, while the raw data are anticorrelated with LGS theory. This result implies that supersurface scattering is an essential phenomenon for quantitative understanding of electron spectra

Attenuated total reflectance Fourier-transform infrared spectroscopic investigation of silicon heterojunction solar cells

Silicon heterojunction solar cells critically depend on the detailed properties of their amorphous/crystalline silicon interfaces. We report here on the use of attenuated total reflectance Fourier-transform infrared (ATR-FTIR) spectroscopy to gain precise insight into the vibrational properties of the surfaces and ultrathin layers present in such solar cells. We fabricate ATR prisms from standard silicon wafers similar to those used for device fabrication. In this fashion, we acquire very-high sensitivity FTIR information on device-relevant structures. Our method has no requirement for minimum layer thickness, enabling the study of the impact of the different fabrication process steps on the film microstructure. We discuss the necessary requirements for the method implementation and give a comprehensive overview of all observed vibration modes. In particular, we study vibrational signatures of Si-H-X, Si-H-X(SiYOZ), B-H, hydroxyl groups, and hydrocarbons on the Si(111) surface. We observe subtle effects in the evolution of the chemical state of the surface during sample storage and process-related wafer handling and discuss their effect on the electronic properties of the involved interfaces. (C) 2015 AIP Publishing LLC

On the Origin of Reduced Cytotoxicity of Germanium-Doped Diamond-Like Carbon: Role of Top Surface Composition and Bonding

This work attempts to understand the behaviour of Ge-induced cytotoxicity of germanium-doped hydrogen-free diamond-like carbon (DLC) films recently thoroughly studied and published by Jelinek et al. At a low doping level, the films showed no cytotoxicity, while at a higher doping level, the films were found to exhibit medium to high cytotoxicity. We demonstrate, using surface-sensitive methods—two-angle X-ray-induced core-level photoelectron spectroscopy (ARXPS) and Low Energy Ion Scattering (LEIS) spectroscopy, that at a low doping level, the layers are capped by a carbon film which impedes the contact of Ge species with tissue. For higher Ge content in the DLC films, oxidized Ge species are located at the top surface of the layers, provoking cytotoxicity. The present results indicate no threshold for Ge concentration in cell culture substrate to avoid a severe toxic reaction