C3TM: CEI CCD charge transfer model for radiation damage analysis and testing

Radiation induced defects in the silicon lattice of Charge Couple Devices (CCDs) are able to trap electrons during read out and thus create a smearing effect that is detrimental to the scientific data. To further our understanding of the positions and properties of individual radiation-induced traps and how they affect space- borne CCD performance, we have created the Centre for Electronic Imaging (CEI) CCD Charge Transfer Model (C3TM). This model simulates the physical processes taking place when transferring signal through a radiation damaged CCD. C3TM is a Monte Carlo model based on Shockley-Read-Hall theory, and it mimics the physical properties in the CCD as closely as possible. It runs on a sub-electrode level taking device specific charge density simulations made with professional TCAD software as direct input. Each trap can be specified with 3D positional information, emission time constant and other physical properties. The model is therefore also able to simulate multi-level clocking and other complex clocking schemes, such as trap pumping

Importance of charge capture in interphase regions during readout of charge-coupled devices

The current understanding of charge transfer dynamics in charge-coupled devices (CCDs) is that charge is moved so quickly from one phase to the next in a clocking sequence and with a density so low that trapping of charge in the interphase regions is negligible. However, simulation capabilities developed at the Centre for Electronic Imaging, which includes direct input of electron density simulations, have made it possible to investigate this assumption further. As part of the radiation testing campaign of the Euclid CCD273 devices, data have been obtained using the trap pumping method, a method that can be used to identify and characterize single defects within CCDs. Combining these data with simulations, we find that trapping during the transfer of charge among phases is indeed necessary to explain the results of the data analysis. This result could influence not only trap pumping theory and how trap pumping should be performed but also how a radiation-damaged CCD is readout in the most optimal way

Evolution and impact of defects in a p-channel CCD after cryogenic proton-irradiation

P-channel CCDs have been shown to display improved tolerance to radiation-induced charge transfer inefficiency (CTI) when compared to n-channel CCDs. However, the defect distribution formed during irradiation is expected to be temperature dependent due to the differences in lattice energy caused by a temperature change. This has been tested through defect analysis of two p-channel e2v CCD204 devices, one irradiated at room temperature and one at a cryogenic temperature (153K). Analysis is performed using the method of single trap pumping. The dominant charge trapping defects at these conditions have been identified as the donor level of the silicon divacancy and the carbon interstitial defect. The defect parameters are analysed both immediately post irradiation and following several subsequent room-temperature anneal phases up until a cumulative anneal time of approximately 10 months. We have also simulated charge transfer in an irradiated CCD pixel using the defect distribution from both the room-temperature and cryogenic case, to study how the changes affect imaging performance. The results demonstrate the importance of cryogenic irradiation and annealing studies, with large variations seen in the defect distribution when compared to a device irradiated at room-temperature, which is the current standard procedure for radiation-tolerance testing

Towards high-resolution astronomical imaging

This paper is a report from a recent meeting on "the Future of high-resolution imaging in the visible and infrared", reviewing the astronomical drivers for development and the technological advances that might boost performance. Each of the authors listed contributed a section themselves.Comment: 6 pages, 7 figures, 11 contributors, Accepted for publication in Astronomy & Geophysics of the RAS, June 2019 issu

Mapping radiation-induced defects in CCDs through space and time

The Charge Coupled Device (CCD) has long been the detector of choice for many space-based applications. The CCD converts the signal X-rays or visible light into electrons (n-channel devices) or holes (p-channel devices) which are stored in the pixel structure during integration until the subsequent transfer of the charge packets through the device to be read out. The transfer of this signal charge is, however, not a perfect process. Throughout the lifetime of a space-based mission the detector will be bombarded by high-energy particles and gamma rays. As time progresses, the radiation will damage the detectors, causing the Charge Transfer Efficiency (CTE) to decrease due to the creation of defects or “traps” in the silicon lattice of the detector. The defects create additional energy levels between the valence and conduction band in the silicon of the detector. Electrons or holes (for n-channel or p-channel devices respectively) that pass over the defect sites may be trapped. The trapped electrons or holes will later be emitted from the traps, subject to an emission-time constant related to the energy level of the associated defect. The capture and emission of charge from the signal leads to a characteristic trailing or “smearing” of images that must be corrected to enable the science goals of a mission to be met. Over the past few years, great strides have been taken in the development of the pocket-pumping (or strictly-speaking “trap pumping”) technique. This technique not only allows individual defects (or traps) within the device to be located to the sub-pixel level, but it enables the investigation of the trap parameters such as the emission time constant to new levels of accuracy. Recent publications have shown the power of this technique in characterising a variety of different defects in both n- and p-channel devices and the potential for use in correction techniques, however, we are now exploring not only the trap locations and properties but the life cycle of these traps through time after irradiation. In orbit, most devices will be operating cold to suppress dark current and the devices are therefore cold whilst undergoing damage from the radiation environment. The mobility of defects varies as a function of temperature such that the mix of defects present following a cryogenic irradiation may vary significantly from that found following a room temperature irradiation or after annealing. It is therefore essential to study the trap formation and migration in orbit-like conditions and over longer timescales. In this paper we present a selection of the latest methods and results in the trap pumping of n- and p-channel devices and demonstrate how this technique now allows us to map radiation-induced defects in CCDs through both space and time. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only

Comparing simulations and test data of a radiation damaged CCD for the Euclid mission

The radiation damage effects from the harsh radiative environment outside the Earth's atmosphere can be a cause for concern for most space missions. With the science goals becoming ever more demanding, the requirements on the precision of the instruments on board these missions also increases, and it is therefore important to investigate how the radiation induced damage affects the Charge-Coupled Devices (CCDs) that most of these instruments rely on. The primary goal of the Euclid mission is to study the nature of dark matter and dark energy using weak lensing and baryonic acoustic oscillation techniques. The weak lensing technique depends on very precise shape measurements of distant galaxies obtained by a large CCD array. It is anticipated that over the 6 year nominal lifetime of mission, the CCDs will be degraded to an extent that these measurements will not be possible unless the radiation damage effects are corrected. We have therefore created a Monte Carlo model that simulates the physical processes taking place when transferring signal through a radiation damaged CCD. The software is based on Shockley-Read-Hall theory, and is made to mimic the physical properties in the CCD as close as possible. The code runs on a single electrode level and takes charge cloud size and density, three dimensional trap position, and multi-level clocking into account. A key element of the model is that it takes device specific simulations of electron density as a direct input, thereby avoiding to make any analytical assumptions about the size and density of the charge cloud. This paper illustrates how test data and simulated data can be compared in order to further our understanding of the positions and properties of the individual radiation-induced traps

Modelling charge transfer inefficiency in Gaia CCDs with in-flight and on-ground data

The European Space Agency’s Gaia spacecraft was launched in 2013 with the aim of making the largest and most precise map of the Milky Way by taking measurements of almost one billion astronomical objects. It has a focal plane that consists of 106 Charge-Coupled Devices (CCDs), custom designed by Teledyne e2v to help fulfil its objectives. These detectors make measurements of positions, velocities, parallaxes, and other physical properties of any objects, with a sufficiently bright enough magnitude, that pass through their field of view. Operating in space means that the Gaia CCDs have been subjected to radiation damage, both ionizing and non-ionizing in nature, in orbit from predominantly solar radiation. This radiation-induced damage leads to the formation of trap defects in the CCD silicon lattice which can trap electrons during readout leading to the increase of charge transfer inefficiency (CTI) and a reduction in the quality of the returned science data. From previous analysis of in-flight data, the degradation of the CCDs, measured from an increase in CTI, has been calculated to be less that that predicted from pre-flight models and on-ground tests. In this study, in-flight and on-ground data is modelled so that the trap landscapes can be further investigated. This was achieved using a charge transfer model, the Charge Distortion Model (CDM), integrated in the Pyxel detector simulation toolkit. Other simulations, namely C3TM, are used in conjunction with the results from Pyxel to obtain a more thorough understanding of the trap landscape causing the observed CTI effects

Gaia CCDs: charge transfer inefficiency measurements between five years of flight

The European Space Agency's Gaia spacecraft was launched in December 2013 and has been in orbit at the Earth-Sun Lagrange point 2 (L2) for over 6 years. The spacecraft measures the positions, distances, space motions and many other physical characteristics of around one billion stars in the Milky Way and beyond. It has a focal plane of 106 Charge-Coupled Devices (CCDs) which have all been performing well but have been measuring a small but quantifiable degradation in performance in time due to Non-Ionizing Energy Loss (NIEL) damage from interstellar radiation. This NIEL damage produces trap defects which can capture charge from signals and reduces the quality of the data. Gaia's original mission lifetime was planned to be around 5 years and the pre-flight testing and radiation damage analysis was tailored around those timescales as well as with the projected solar activity before launch. Closer to the time of launch and during Gaia's years of orbit, it has been noted that the solar activity was lower than what was initially predicted. From the previous analysis of in-flight data in 2016, it was calculated that Gaia was experiencing an order of magnitude less radiation damage than was predicted. This paper describes the analysis of charge calibration data and corresponding Charge Transfer Inefficiency (CTI) measurements from the in-flight CCDs, both near the beginning of the mission and after more than 5 years in orbit to quantify the radiation damage impact. These sets of results can be compared with those from the pre-flight tests which can be used to evaluate and understand the differences between the on-ground and in-flight results

Understanding the evolution of radiation damage on the Gaia CCDs after 72 months at L2

The European Space Agency’s Gaia spacecraft has been operating in L2 ever since its launch in December 2013 with a payload that includes 106 scientific charge-coupled devices (CCDs). Due to the predicted radiation environment at the pre-flight testing stage in addition to the high level of accuracy demanded by the science objectives, the non-ionizing energy loss (NIEL) damage on the detectors was identified as a major factor that could affect the science goals of the mission. Here, we present the analysis of an extended set of charge calibration data, taken up to almost six years after launch. It is found that the rate of radiation damage accumulation by the CCDs has not differed significantly from previous results. While the parallel and serial CTI measure an increase in time, the trap defect landscape is still dominated by the preflight defects rather than the radiation-induced traps. CCD devices that were predicted to have a lower NIEL dose measure comparatively larger rates of CTI increase. In addition to this, thicker devices have been measured to have lower serial CTI values compared to thinner devices. The initial parallel CTI values have also been found to be dependent on manufacture year

Evaluating UV detector enhancement technologies for the next generation of space telescopes: the path to CASTOR

As space agencies consider the next generation of large space telescopes, it is becoming clear that high performance Ultraviolet (UV) imaging will be a key requirement. High-performing CMOS image sensors that are optimised for UV detection performance will therefore be essential for these missions to be able to fulfil their science requirements. The CASTOR mission, a 1m UV space telescope project, will be utilising the large format CIS303 and CIS120 detectors from Teledyne e2v for three large focal planes covering the UV , u ′ and g ′ bands, respectively. Typically, silicon sensors have a very low quantum efficiency (QE) in the UV band between 150- 300 nm, and the 2d-doping technology from NASA/JPL will therefore be utilised to improve the quantum efficiency. The Open University will perform electro-optical testing and space qualification of the CIS303 and CIS120 detectors, including a comparison of different UV coating and enhancement technologies. This paper covers the specification of radiation testing of the CIS303 and CIS120 detectors at the Open University, and characterisation of the QE-enhancing surface treatments