Tissue reaction to the "inert" plastics

Thesis (M.D.)--Boston Universit

Timing- and power-driven ALU design training using spreadsheet-based arithmetic exploration

We describe master-level design training that combines ALU design exercises based on commercial synthesis tools and arithmetic explorations based on spreadsheets. Despite its limited complexity, the ALU has a few important properties that make it suitable for our training; 1) the ALU subcircuits are diverse and contain both short and long timing paths, 2) timing-driven design is called for, since the ALU is a performance bottleneck, and 3) the ALU is continuously used, making power dissipation an important design parameter. After enforcing strict timing constraints during synthesis of the ALU, the students need to reconsider how to implement the arithmetic block, which initially is too slow. Here, performing arithmetic explorations inside an innovative spreadsheet environment helps to visualize circuit implementation tradeoffs. The final phase in the design training focuses on power analysis and demonstrates that the choice of timing constraint impacts power dissipation

An Interesting Lycoperdon affin to L. ericaeum

An interesting Lycoperdon affin to L. ericaeum. Lycoperdon collections recorded from acidic, dry, mossy habitats on rocks or on sand in Fennoscandia and the Northeastem of Spain are here described. These collections are close to L. ericaeum but differs in its protruding ostiole and its subelastic capillitium.Un interesante Lycoperdon afín a L. ericaeum. Se han recolectado basidiomas de Lycoperdon entre musgos en terrenos acidófilos or en zonas arenosas en Fennoscandia y en el noreste de España. Estas recolecciones presentan caracteres similares a los de L. ericaeum, pero difieren en su ostíolo prominente y el capilicio subelàstico

Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices

One of the most important degradation effects observed in MNOS memory transistors is a negative shift of the threshold window. This negative shift is caused by a strong increase of the density of Si‐SiO2 surface traps. This effect has been proposed to be caused by the same effect that is observed in MOS devices subjected to negative‐bias stress (NBS). In this paper, a detailed study of the increase of the number of surface traps in MOS structures after NBS at temperatures (25–125°C) and fields (400–700 MV/m) comparable to those used in MNOS devices is presented. Two different behaviors are observed. At low fields the surface‐trap density increases as t^1/4 and at high fields it increases linearly with the stress time t. The low‐field behavior is temperature and field dependent and the zero‐field activation energy is determined to be 0.3 eV. The high‐field behavior is strongly field dependent but independent of temperature. A physical model is proposed to explain the surface‐trap growth as being diffusion controlled at low fields and tunneling limited at high fields. A comparison with MNOS degradation is made and it was found to be related to the t^1/4 behavior mentioned above

An Interesting Lycoperdon affin to L. ericaeum

An interesting Lycoperdon affin to L. ericaeum. Lycoperdon collections recorded from acidic, dry, mossy habitats on rocks or on sand in Fennoscandia and the Northeastem of Spain are here described. These collections are close to L. ericaeum but differs in its protruding ostiole and its subelastic capillitium.Un interesante Lycoperdon afín a L. ericaeum. Se han recolectado basidiomas de Lycoperdon entre musgos en terrenos acidófilos or en zonas arenosas en Fennoscandia y en el noreste de España. Estas recolecciones presentan caracteres similares a los de L. ericaeum, pero difieren en su ostíolo prominente y el capilicio subelàstico

T Cell Receptor Immunotherapy Drives Human Immunodeficiency Virus Evolution in Humanized Mice

Effective CD8+ T cell responses targeted to the KK10 epitope of HIV presented by HLA-B*27:05, a protective HLA allele, correlate with the ability to control infection without antiretroviral therapy (ART). Here, we report an immunotherapy approach using two B*27:05-KK10-specific T Cell Receptors (TCRs) isolated from HIV controllers. Immunocompromised mice engrafted with human Hematopoietic Stem/Progenitor Cells (HSPCs) encoding for the TCRs showed differentiation into functionally active engineered T cells. Following infection with HIV, both TCRs showed sustained, albeit modest, viral suppression over 32 weeks, accompanied by a concomitant increase in CD4+ T cells. Sequencing of viral quasi-species from the plasma of infected mice demonstrated clear evidence for viral evolution under selection pressure from the TCRs. The most commonly observed mutation in the KK10 epitope was L6M, which preserved viral fitness but showed attenuated recognition by the TCRs. These studies show that TCR-immunotherapy was able to suppress HIV infection long-term while driving HIV evolution in humanized mice

Design and characterization of MIS devices

This work is a part of the research performed at the Research Laboratory of Electronics (Elektronfysik III), concerning [metal-insulator-semiconductor] MIS field-effect devices. It deals with the properties of different memory devices, such as the [metal-nitride-oxide-semiconductor] MNOS and the [floating-gate avalanche-injection metal-oxide-semiconductor] FAMOS memory transistors, where the [metal insulator semiconductor] MIS structure is utilized for information storage. Paper A describes a new associative memory cell in which MNOS transistors are used as storage elements. Paper B describes the Negative Bias Stress of MOS devices at high electric fields with respect to the degradation observed in MNOS memory devices repeatedly operated at high write/erase gate voltages. Paper C deals with the FAMOS memory device and how the information may be unintentionally changed after a large number of read cycles. Paper D is concerned with some critical problems during fabrication of low threshold voltage CMOS circuits for digital watch applications. Paper E shows the influence of a narrow channel width on the threshold voltage in MOS transistors when modulated by the substrate-source voltage

The Effectiveness of Changing Negative Self-Talk

The Effectiveness of Changing Negative Self-Talk by T. Jeppson - Instructional Design Support Specialist This paper explores how teaching individuals struggling with negative self-talk or negative self-statements how to change them to be positive statements can help them become more aware of their self-talk and inner critic, as well as help them understand that by changing their self-talk they will increase and boost their self-confidence, assisting in finding their value and worth thus increasing their ability to be more effective personally and professionally