High temperature thermoelectric efficiency in Ba8Ga16Ge30

The high thermoelectric figure of merit (zT) of Ba8Ga16Ge30 makes it one of the best n-type materials for thermoelectric power generation. Here, we describe the synthesis and characterization of a Czochralski pulled single crystal of Ba8Ga16Ge30 and polycrystalline disks. Measurements of the electrical conductivity, Hall effect, specific heat, coefficient of thermal expansion, thermal conductivity, and Seebeck coefficient were performed up to 1173 K and compared with literature results. Dilatometry measurements give a coefficient of thermal expansion of 16×10^−6 K^−1 up to 1175 K. The trend in electronic properties with composition is typical of a heavily doped semiconductor. The maximum in the thermoelectric figure of merit is found at 1050 K with a value of 0.8. The correction of zT due to thermal expansion is not significant compared to the measurement uncertainties involved. Comparing the thermoelectric efficiency of segmented materials, the effect of compatibility makes Ba8Ga16Ge30 more efficient than the higher zT n-type materials SiGe or skutterudite CoSb3

Protein Mobility in the Cytoplasm of Escherichia coli

The rate of protein diffusion in bacterial cytoplasm may constrain a variety of cellular functions and limit the rates of many biochemical reactions in vivo. In this paper, we report noninvasive measurements of the apparent diffusion coefficient of green fluorescent protein (GFP) in the cytoplasm of Escherichia coli. These measurements were made in two ways: by photobleaching of GFP fluorescence and by photoactivation of a red-emitting fluorescent state of GFP (M. B. Elowitz, M. G. Surette, P. E. Wolf, J. Stock, and S. Leibler, Curr. Biol. 7:809-812, 1997). The apparent diffusion coefficient, Da, of GFP in E. coli DH5alpha was found to be 7.7 ± 2.5 µm^2/s. A 72-kDa fusion protein composed of GFP and a cytoplasmically localized maltose binding protein domain moves more slowly, with Da of 2.5 ± 0.6 µm^2/s. In addition, GFP mobility can depend strongly on at least two factors: first, Da is reduced to 3.6 ± 0.7 µm^2/s at high levels of GFP expression; second, the addition to GFP of a small tag consisting of six histidine residues reduces Da to 4.0 ± 2.0 µm^2/s. Thus, a single effective cytoplasmic viscosity cannot explain all values of Da reported here. These measurements have implications for the understanding of intracellular biochemical networks

Defect-induced modification of low-lying excitons and valley selectivity in monolayer transition metal dichalcogenides

We study the effect of point-defect chalcogen vacancies on the optical properties of monolayer transition metal dichalcogenides using ab initio GW and Bethe-Salpeter equation calculations. We find that chalcogen vacancies introduce unoccupied in-gap states and occupied resonant defect states within the quasiparticle continuum of the valence band. These defect states give rise to a number of strongly-bound defect excitons and hybridize with excitons of the pristine system, reducing the valley-selective circular dichroism. Our results suggest a pathway to tune spin-valley polarization and other optical properties through defect engineering