Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission

It is demonstrated that it is possible to investigate details of the electronic structure of an internal atomic monolayer using soft-x-ray-emission spectroscopy. The local and partial density of states of one monolayer and three monolayers of Si, embedded deep below a GaAs(001) surface, was extracted. Clear differences to the density of states for bulk Si were observed.Original Publication:P. O. Nilsson, J. Kanski, J. V. Thordson, T. G. Andersson, J. Nordgren, J. Guo and Martin Magnuson, Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission, 1995, Physical Review B. Condensed Matter and Materials Physics, (52), R8643-R8645.http://dx.doi.org/10.1103/PhysRevB.52.R8643Copyright: American Physical Societyhttp://www.aps.org

Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime

We report results for Si layers embedded in GaAs, extending from the delta-doped (δ-doped) range up to 6 monolayers derived by means of variable temperature resistivity and Hall effect measurements, secondary ion mass spectrometry and high resolution X-ray diffractometry techniques. The conductivity transition from free carrier transport in ordered δ-layers (4 ML) is clearly observed. This observation is in good agreement with the secondary ion mass spectrometry and high resolution X-ray diffractometry data. Results from the intermediate case with 2-3 MLs are also discussed