Quantitative two-dimensional dopant profile measurement and inverse modeling by scanning capacitance microscopy

Journal ArticleQuantitative dopant profile measurements are performed on a nanometer scale by scanning capacitance microscopy (SCM). An atomic force microscope is used to position a nanometer scale tip at a semiconductor surface, and local capacitance change is measured as a function of sample bias. A new feedback method has been demonstrated in which the magnitude of the ac bias voltage applied to the sample is adjusted to maintain a constant capacitance change as the tip is scanned across the sample surface

Lateral dopant profiling with 200 nm resolution by scanning capacitance microscopy

Journal ArticleMeasurement of dopant density in silicon with lateral resolution on the 200 nm scale has been demonstrated with a near-field capacitance technique. The technique is based upon the measurement of local capacitance between a 100 nm tip and a semiconducting surface. Lateral dopant imaging is achieved by the measurement of the voltage-dependent capacitance between tip and sample due to the depletion of carriers in the semiconductor, as the tip is scanned laterally over the surface

Lateral dopant profiling in MOS structures on a 100 nm scale using scanning capacitance microscopy

Journal ArticleScanning capacitance microscopy and atomic force microscopy have been used to image the extent of lateral dopant diffusion in MOS structures. The data are capacitance vs. voltage measurements made on a submicron scale. The technique is non-destructive when imaging uncleaved samples. New experimental data are presented here on actual, cleaved device structures which clearly indicate the two-dimensional dopant profile in terms of a spatially varying modulated capacitance signal. First-order deconvolution indicates the technique has much promise for the quantitative characterization of dopant profiles. The potential of the technique to illuminate important device-related phenomena on a local scale is also discussed

Tunnelling Studies of Two-Dimensional States in Semiconductors with Inverted Band Structure: Spin-orbit Splitting, Resonant Broadening

The results of tunnelling studies of the energy spectrum of two-dimensional (2D) states in a surface quantum well in a semiconductor with inverted band structure are presented. The energy dependence of quasimomentum of the 2D states over a wide energy range is obtained from the analysis of tunnelling conductivity oscillations in a quantizing magnetic field. The spin-orbit splitting of the energy spectrum of 2D states, due to inversion asymmetry of the surface quantum well, and the broadening of 2D states at the energies, when they are in resonance with the heavy hole valence band, are investigated in structures with different strength of the surface quantum well. A quantitative analysis is carried out within the framework of the Kane model of the energy spectrum. The theoretical results are in good agreement with the tunnelling spectroscopy data.Comment: 29 pages, RevTeX, submitted in Phys.Rev.B. Figures available on request from [email protected]

Aeroelastic design and LPV modelling of an experimental wind turbine blade equipped with free-floating flaps

Trailing edge aps located outboard on wind turbine blades have recently shown considerable potential in the alleviation of turbine lifetime dynamic loads. The concept of the free-oating ap is speci_cally interesting for wind turbines, on account of its modularity and enhanced control authority. Such a ap is free to rotate about its axis; camberline control of the free-oating ap allows for aeroelastic control of blade loads. This paper describes the design of a scaled wind turbine blade instrumented with free-oating aps, intended for use in wind tunnel experiments. The nature of the ap introduces a coupled form of utter due to the aeroelastic coupling of ap rigid-body and blade out-of-plane modes; for maximal control authority it is desired to operate close to the utter limit. Analytical and numerical methods are used to perform a utter analysis of the turbine blade. It is shown that the potential ow aeroelastic model can be recast as a continuous-time Linear-Parameter-Varying (LPV) state space model of a low order, for which formal controller design methodologies are readily available

Aeroelastic design and LPV modelling of an experimental wind turbine blade equipped with free-floating flaps

Trailing edge aps located outboard on wind turbine blades have recently shown considerable potential in the alleviation of turbine lifetime dynamic loads. The concept of the free-oating ap is speci_cally interesting for wind turbines, on account of its modularity and enhanced control authority. Such a ap is free to rotate about its axis; camberline control of the free-oating ap allows for aeroelastic control of blade loads. This paper describes the design of a scaled wind turbine blade instrumented with free-oating aps, intended for use in wind tunnel experiments. The nature of the ap introduces a coupled form of utter due to the aeroelastic coupling of ap rigid-body and blade out-of-plane modes; for maximal control authority it is desired to operate close to the utter limit. Analytical and numerical methods are used to perform a utter analysis of the turbine blade. It is shown that the potential ow aeroelastic model can be recast as a continuous-time Linear-Parameter-Varying (LPV) state space model of a low order, for which formal controller design methodologies are readily available.Team Raf Van de PlasAerospace Structures & Computational MechanicsWind EnergyDelft Center for Systems and Contro