Electrical isolation of GaN by MeV ion irradiation

The evolution of sheet resistance of n-type GaN epilayers exposed to irradiation with MeV H, Li, C, and O ions is studied in situ. Results show that the threshold dose necessary for complete isolation linearly depends on the original free electron concentration and reciprocally depends on the number of atomic displacements produced by ion irradiation. Furthermore, such isolation is stable to rapid thermal annealing at temperatures up to 900 °C. In addition to providing a better understanding of the physical mechanisms responsible for electrical isolation, these results can be used for choosing implant conditions necessary for an effective electrical isolation of GaN-based devices.This work was partly supported by Conselho Nacional de Pesquisas (CNPq, Brazil) under Contract No. 200541/ 99-4

Hidden Order in Crackling Noise during Peeling of an Adhesive Tape

We address the long standing problem of recovering dynamical information from noisy acoustic emission signals arising from peeling of an adhesive tape subject to constant traction velocity. Using phase space reconstruction procedure we demonstrate the deterministic chaotic dynamics by establishing the existence of correlation dimension as also a positive Lyapunov exponent in a mid range of traction velocities. The results are explained on the basis of the model that also emphasizes the deterministic origin of acoustic emission by clarifying its connection to sticks-slip dynamics.Comment: 5 pages, 10 figure

Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si

Evolution of extended defects during annealing of MeV ion-implanted p-type Si has been characterized using deep level transient spectroscopy and transmission electron microscopy. The p-type Si was implanted with Si, Ge, and Sn ions with varying energies and doses from 5×10¹² to 1×10¹⁴ cm⁻² then annealed at 800 °C for 15 min. For all implanted species, the critical dose for transformation from point to extended defects has been determined. The type of extended defects formed depends upon the mass of the implanted species even though the dose was adjusted to create a similar damage distribution for all implanted species.Australian Research Council supported J. W. L

Design and fabrication of silicon nanowires towards efficient solar cells

The recent rise of semiconductor nanowires opens new opportunities for realizing high efficiency photovoltaic devices at low cost due to the unique one-dimensional structure with remarkable electrical and optical properties. Particularly, silicon nanowires (SiNWs), as one of the most earth-abundant materials, have been investigated worldwide to develop cost-effective solar cells. Great efforts have been devoted to fabricating ordered/disordered SiNWs using cost-effective approaches and achieving optimized structural parameters, such as array periodicity, nanowire morphology, length and diameter. Systematic theoretical investigations along with experimental studies on optical and electrical properties of SiNWs have been carried out. These efforts have led to obtaining remarkable improvement of the power conversion efficiency of SiNW solar cells from 10% in the last few years. However, till now, the power conversion efficiency of these SiNW solar cells is far from satisfactory for any commercial applications compared with the traditional bulk silicon solar cells. Further development of SiNW solar cells requires better understanding of the optical and electrical properties of the nanowire solar cells. Improvement in fabrication of high quality nanowires in a controlled fashion also plays a significant role in nanowire solar cell design and fabrication. To guide future development of SiNW solar cells, the recent work on SiNWs is reviewed. Following that, various techniques aiming to achieve high quality nanowires at low cost are introduced. Both bottom-up and top-down techniques are discussed. Then, electrical properties and various types of solar cells based on SiNWs are discussed. Finally challenges and prospects of SiNW solar cells are presented

Effect of irradiation temperature and ion flux on electrical isolation of GaN

We study the evolution of sheet resistance of n-type GaN epilayers irradiated with MeV ¹H and ¹²C ions. Results show that both implantation temperature (varied from 77 up to 423 K) and ion beam flux affect the process of electrical isolation in the case of irradiation with ¹²C ions. This behavior is consistent with significant dynamic annealing occurring in GaN during MeV light-ion bombardment, which suggests a scenario where the centers responsible for electrical isolation are defect clusters or anti-site-related defects. Dynamic annealing causes simple ion-beam-generated Frenkel pairs to annihilate (or cluster) during irradiation at liquid nitrogen temperature and above. These beam-flux and irradiation-temperatureeffects are not observed during bombardment with lighter ¹H ions, which produce very dilute collision cascades. A qualitative model is proposed to explain temperature and flux effects in GaN in the MeV light-ion bombardment regime used for electrical isolation

Mechanical deformation of single-crystal ZnO

The deformation behavior of bulk ZnO single crystals is studied by a combination of spherical nanoindentation and atomic force microscopy. Results show that ZnO exhibits plastic deformation for relatively low loads (>~4–13 mN with an ~4.2 mm radius spherical indenter). Interestingly, the elastic–plastic deformation transition threshold depends on the loading rate, with faster loading resulting, on average, in larger threshold values. Multiple discontinuities (so called ‘‘pop-in’’ events) in force–displacement curves are observed during indentation loading. No discontinuities are observed on unloading. Slip is identified as the major mode of plastic deformation in ZnO, and pop-in events are attributed to the initiation of slip. An analysis of partial load–unload data reveals values of the hardness and Young’s modulus of 5.060.1 and 111.264.7 GPa, respectively, for a plastic penetration depth of 300 nm. Physical processes determining deformation behavior of ZnO are discussed

Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs

The carrier dynamics of photoexcited electrons in the vicinity of the surface of (NH4)2S-passivated GaAs were studied via terahertz (THz) emission spectroscopy and optical-pump THz-probe spectroscopy. THz emission spectroscopy measurements, coupled with Monte Carlo simulations of THz emission, revealed that the surface electric field of GaAs reverses after passivation. The conductivity of photoexcited electrons was determined via optical-pump THz-probe spectroscopy, and was found to double after passivation. These experiments demonstrate that passivation significantly reduces the surface state density and surface recombination velocity of GaAs. Finally, we have demonstrated that passivation leads to an enhancement in the power radiated by photoconductive switch THz emitters, thereby showing the important influence of surface chemistry on the performance of ultrafast THz photonic devices.Comment: 4 pages, 3 figures, to appear in Applied Physics Letter

A prototype ASIC for APD array readout of scintillating plastic fibers

We report on the development of custom front-end electronics for use with avalanche photodiode (APD) arrays as part of a NASA technology study for the readout of scintillating plastic fibers. APD arrays featuring 64 1 mm square pixels are used. We demonstrate that a pixel of these APD arrays coupled to relatively thin (0.25 mm) and short (15 cm) scintillating plastic fibers can be used to detect and measure the tracks of even minimum ionizing particles (MIPs). An applicationspecific integrated circuit (ASIC) implementation of the electronics is required to produce a detector sufficiently compact for practical use in a flight experiment featuring many thousands of channels. This paper briefly describes the detector concept and performance and presents the design and performance of a four-channel prototype ASIC fabricated using the 0.35 micron TSMC process

Effects of excitation density on cathodoluminescence from GaN

Wurtzite GaN epilayers are studied by cathodoluminescence(CL)spectroscopy. Results show that the intensities of donor–acceptor pair (DAP) and yellow luminescence (YL) peaks sublinearly depend on excitation density, presumably, due to saturation effects. The intensity of near-gap emission, however, exhibits a superlinear dependence on electron-beam excitation. In contrast to photoluminescence measurements, CL studies of GaN are usually performed in a regime with a strongly nonlinear dependence of luminescence intensities on excitation due to a large difference in carrier generation rates for these two techniques. As a result, the ratios of near-gap to YL and DAP emission intensities strongly depend on electron-beam current. Moreover, electron-beam spot size (i.e., beam focusing) dramatically affects CL intensity. An understanding of such saturation effects is necessary for a correct interpretation of CL spectra from GaN

Effect of the density of collision cascades on implantation damage in GaN

Damage accumulation in wurtzite GaN films bombarded with 0.5 MeV Bi₁ and 1 MeV Bi₂ ions (the so-called molecular effect) is studied by Rutherford backscattering/channeling spectrometry. Results show that an increase in the density of collision cascades dramatically enhances the level of implantation-produced lattice disorder in GaN. This effect is attributed to (i) an increase in the defect clustering efficiency with increasing density of ion-beam-generated point defects and/or (ii) to collective nonlinear energy spike processes. Such a strong influence of the density of collision cascades is important to take into account for a correct estimation of implantation-produced lattice disorder in GaN