Development of superconducting conductors for Large Helical Device

The superconducting helical coils of the Large Helical Device (LHD) require superconducting conductors with large current capacities (from 20 kA to 30 kA) and high current densities (55 A/mm2 at 8 T). An NbTi superconductor/bin with pool boiling is being used because of the large electromagnetic force and the complicated helical windings. Several conductors are designed to show how the difference of the position of pure aluminum in the conductors affects the stability and the mechanical properties. Scaled-down R&D conductors with operational currents from 7 kA to 10 kA were made on an experimental basis. The superconducting characteristics, stability, and mechanical properties of these scaled-down conductors were tested. The design and the test results concerning the superconducting characteristics are describe

Molecular Clock on a Neutral Network

The number of fixed mutations accumulated in an evolving population often displays a variance that is significantly larger than the mean (the overdispersed molecular clock). By examining a generic evolutionary process on a neutral network of high-fitness genotypes, we establish a formalism for computing all cumulants of the full probability distribution of accumulated mutations in terms of graph properties of the neutral network, and use the formalism to prove overdispersion of the molecular clock. We further show that significant overdispersion arises naturally in evolution when the neutral network is highly sparse, exhibits large global fluctuations in neutrality, and small local fluctuations in neutrality. The results are also relevant for elucidating the topological structure of a neutral network from empirical measurements of the substitution process.Comment: 10 page

Integration techniques of pHEMTs and planar Gunn diodes on GaAs substrates

This work presents two different approaches for the implementation of pseudomorphic high electron mobility transistors (pHEMTs) and planar Gunn diodes on the same gallium arsenide substrate. In the first approach, a combined wafer is used where a buffer layer separates the active layers of the two devices. A second approach was also examined using a single wafer where the AlGaAs/InGaAs/GaAs heterostructures were designed for the realisation of pHEMTs. The comparison between the two techniques showed that the devices fabricated on the single pHEMT wafer presented superior performance over the combined wafer technique. The DC and small-signal characteristics of the pHEMTs on the single wafer were enhanced after the use of T-gates with 70 nm length. The maximum transconductance of the transistors was equal to 780 mS/mm with 200 GHz maximum frequency of oscillation (fmax). Planar Gunn diodes fabricated in the pHEMT wafer, with 1.3 μm anode-to-cathode separation (LAC) presented oscillations at 87.6 GHz with maximum power of oscillation equal to -40 dBm