1,155 research outputs found

    Scanning tunneling microscopy and spectroscopy of the electronic local density of states of graphite surfaces near monoatomic step edges

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    We measured the electronic local density of states (LDOS) of graphite surfaces near monoatomic step edges, which consist of either the zigzag or armchair edge, with the scanning tunneling microscopy (STM) and spectroscopy (STS) techniques. The STM data reveal that the (3×3)R30∘(\sqrt{3} \times \sqrt{3}) R 30^{\circ} and honeycomb superstructures coexist over a length scale of 3-4 nm from both the edges. By comparing with density-functional derived nonorthogonal tight-binding calculations, we show that the coexistence is due to a slight admixing of the two types of edges at the graphite surfaces. In the STS measurements, a clear peak in the LDOS at negative bias voltages from -100 to -20 mV was observed near the zigzag edges, while such a peak was not observed near the armchair edges. We concluded that this peak corresponds to the graphite "edge state" theoretically predicted by Fujita \textit{et al.} [J. Phys. Soc. Jpn. {\bf 65}, 1920 (1996)] with a tight-binding model for graphene ribbons. The existence of the edge state only at the zigzag type edge was also confirmed by our first-principles calculations with different edge terminations.Comment: 20 pages, 11 figure

    Micropropagation of Vitis amurensis Rupr.: An improved protocol

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    Research NoteAn efficient micropropagation procedure of V. amurensis cv. Zuoshan 1 was established. NAA combined with BA resulted in callus formation and inhibition of shoot growth, whereas a combination of 0.3 M IAA and 4.4 M BA gave highest shoot growth and multiplication. IAA at 2.8 and 5.7 M led to high root formation of shoots. 30 g l-1 sucrose was needed for high shoot growth, while high rooting was achieved with 0-20 g l-1 sucrose. Intact leaves are required for a high level of shoot rooting.

    Photoemission study of poly(dA)-poly(dT) DNA : Experimental and theoretical approach to the electronic density of states

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    We present results of an ultraviolet photoemission spectroscopy study of artificially synthesized poly(dA)-poly(dT) DNA molecules on pp-type Si substrates. For comparison, we also present the electronic density of states (DOS) calculated using an \emph{ab initio} tight-binding method based on density-functional theory (DFT). Good agreement was obtained between experiment and theory. The spectra of DNA networks on the Si substrate showed that the Fermi level of the substrate is located in the middle of the band gap of DNA. The spectra of thick (∼70\sim 70 nm) DNA films showed a downward shift of ∼2\sim 2 eV compared to the network samples.Comment: 4 pages, 4 figure

    Room-temperature ferromagnetism in graphite driven by 2D networks of point defects

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    Ferromagnetism in carbon-based materials is appealing for both applications and fundamental science purposes because carbon is a light and bio-compatible material that contains only s and p electrons in contrast to traditional ferromagnets based on 3d or 4f electrons. Here we demonstrate direct evidence for ferromagnetic order locally at defect structures in highly oriented pyrolytic graphite (HOPG) with magnetic force microscopy and in bulk magnetization measurements at room temperature. Magnetic impurities have been excluded as the origin of the magnetic signal after careful analysis supporting an intrinsic magnetic behavior of carbon. The observed ferromagnetism has been attributed to originate from unpaired electron spins localized at grain boundaries of HOPG. Grain boundaries form two-dimensional arrays of point defects, where their spacing depends on the mutual orientation of two grains. Depending on the distance between these point defects, scanning tunneling spectroscopy of grain boundaries showed two intense split localized states for small distances between defects (< 4 nm) and one localized state at the Fermi level for large distances between defects (> 4 nm).Comment: 19 pages, 5 figure

    Mass flow rate measurement of thermal creep flow from transitional to slip flow regime

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    Measurements of the thermal creep flow through a single rectangular microchannel connected to two tanks maintained initially at the same pressure, but at different temperatures, are carried out for five noble gas species, over a large range of pressure and for two temperature differences between the tanks. The time-dependent pressure variations in both cold and hot tanks are investigated, and the temperature-driven (thermal creep) mass flow rate between two tanks is calculated from these data for the rarefaction parameter ranging from the transitional to slip flow regime. The measured mass flow rate is compared with the numerical solution of the S-model kinetic equation, and they show good agreement. A novel approximate expression to calculate the temperature-driven mass flow rate in the transitional and slip flow regimes is proposed. This expression provides results in good agreement with the measured values of the mass flow rate. In the slip flow regime, the thermal slip coefficient is calculated by employing the previously reported methodology, and the influence of the nature of the gas on this coefficient is investigated. The measured values of the thermal slip coefficient agree well with the values available in the literature, indicating that this coefficient is independent of the shape of a channel

    Gauge field for edge state in graphene

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    By considering the continuous model for graphene, we analytically study a special gauge field for the edge state. The gauge field explains the properties of the edge state such as the existence only on the zigzag edge, the partial appearance in the kk-space, and the energy position around the Fermi energy. It is demonstrated utilizing the gauge field that the edge state is robust for surface reconstruction, and the next nearest-neighbor interaction which breaks the particle-hole symmetry stabilizes the edge state.Comment: 9 pages, 5 figure

    Graphene Nano-Ribbon Electronics

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    We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases, indicating the impact of edge states. Analysis of temperature dependent measurements suggests a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the graphene ribbon devices at low frequency is found to be dominated by the 1/f noise.Comment: 6 pages, 7 figure

    Magnetism as a mass term of the edge states in graphene

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    The magnetism by the edge states in graphene is investigated theoretically. An instability of the pseudo-spin order of the edge states induces ferrimagnetic order in the presence of the Coulomb interaction. Although the next nearest-neighbor hopping can stabilize the pseudo-spin order, a strong Coulomb interaction makes the pseudo-spin unpolarized and real spin polarized. The magnetism of the edge states makes two peaks of the density of states in the conduction and valence energy bands near the Fermi point. Using a continuous model of the Weyl equation, we show that the edge-induced gauge field and the spin dependent mass terms are keys to make the magnetism of the edge states. A relationship between the magnetism of the edge states and the parity anomaly is discussed.Comment: 7 pages, 5 figure
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