Magnetotransport in p-type Ge quantum well narrow wire arrays

We report magnetotransport measurements of a SiGe heterostructure containing a 20 nm p-Ge quantum well with a mobility of 800 000 cm2 V−1 s−1. By dry etching arrays of wires with widths between 1.0 μm and 3.0 μm, we were able to measure the lateral depletion thickness, built-in potential, and the phase coherence length of the quantum well. Fourier analysis does not show any Rashba related spin-splitting despite clearly defined Shubnikov-de Haas oscillations being observed up to a filling factor of ν = 22. Exchange-enhanced spin-splitting is observed for filling factors below ν = 9. An analysis of boundary scattering effects indicates lateral depletion of the hole gas by 0.5 ± 0.1 μm from the etched germanium surface. The built-in potential is found to be 0.25 ± 0.04 V, presenting an energy barrier for lateral transport greater than the hole confinement energy. A large phase coherence length of 3.5 ± 0.5 μm is obtained in these wires at 1.7 K.This work was supported by the EPSRC funded “Spintronic device physics in Si/Ge heterostructures” EP/J003263/1 and EP/J003638/1 projects and a Platform Grant No. EP/J001074/1.This is the author accepted manuscript. The final version is available from AIP via http://dx.doi.org/10.1063/1.4919053

Spin-splitting in p-type Ge devices

Compressively strained Ge quantum well devices have a spin-splitting in applied magnetic field that is entirely consistent with a Zeeman effect in the heavy hole valence band. The spin orientation is determined by the biaxial strain in the quantum well with the relaxed SiGe buffer layers and is quantized in the growth direction perpendicular to the conducting channel. The measured spin-splitting in the resistivity ρxx agrees with the predictions of the Zeeman Hamiltonian where the Shubnikov-deHaas effect exhibits a loss of even filling factor minima in the resistivity ρxx with hole depletion from a gate field, increasing disorder or increasing temperature. There is no measurable Rashba spin-orbit coupling irrespective of the structural inversion asymmetry of the confining potential in low p-doped or undoped Ge quantum wells from a density of 6 × 1010 cm−2 in depletion mode to 1.7 × 1011 cm−2 in enhancement

A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs systems

We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers as narrow as 5 nm or 7.5 nm. With such narrow barriers, in the h-h configuration we observe signs of magnetic-field-induced exciton condensation in the quantum Hall bilayer regime. In the same devices we can study the zero-magnetic-field e-h and h-h bilayer states using Coulomb drag. Very strong e-h Coulomb drag resistivity (up to 10% of the single layer resistivity) is observed at liquid helium temperatures, but no definite signs of exciton condensation are seen in this case. Self-consistent calculations of the electron and hole wavefunctions show this might be because the average interlayer separation is larger in the e-h case than the h-h case.This work was funded by EPSRC EP/H017720/1 and EP/J003417/1 and European Union Grant INDEX 289968. A.F.C. acknowledges funding from Trinity College, Cambridge, and D.T. from St. Catherine's College, Cambridge. I.F. acknowledges funding from Toshiba Research Europe Limited

Determining the proximity effect-induced magnetic moment in graphene by polarized neutron reflectivity and x-ray magnetic circular dichroism

We report the magnitude of the induced magnetic moment in CVD-grown epitaxial and rotated-domain graphene in proximity with a ferromagnetic Ni film, using polarized neutron reflectivity (PNR) and X-ray magnetic circular dichroism (XMCD). The XMCD spectra at the C K-edge confirm the presence of a magnetic signal in the graphene layer, and the sum rules give a magnetic moment of up to ∼0.47 μB/C atom induced in the graphene layer. For a more precise estimation, we conducted PNR measurements. The PNR results indicate an induced magnetic moment of ∼0.41 μB/C atom at 10 K for epitaxial and rotated-domain graphene. Additional PNR measurements on graphene grown on a nonmagnetic Ni9Mo1 substrate, where no magnetic moment in graphene is measured, suggest that the origin of the induced magnetic moment is due to the opening of the graphene’s Dirac cone as a result of the strong C pz-Ni 3d hybridization

Magnetic nanoparticles in biosensing and medicine

Drawing together topics from a wide range of disciplines, this text provides a comprehensive insight into the fundamentals of magnetic biosensors and the applications of magnetic nanoparticles in medicine. Internationally renowned researchers showcase topics ranging from the basic physical principles of magnetism to the detection and manipulation, synthesis protocols and natural occurrence of magnetic nanoparticles. Up-to-date examples of their clinical usage and research applications in the biomedical fields of sensing by diverse magnetic detection methods, in imaging by MRI and in therapeutic strategies such as hyperthermia, are also discussed, providing a thorough introduction to this rapidly developing field. Each chapter features questions with answers, highlighted definition boxes, and numerous illustrations which help readers grasp key concepts. Mathematical tools, together with key literature references, provide a strong underpinning for the material, making it ideal for graduate students, lecturers, medical researchers and industrial scientific strategists

A composite element bit design for magnetically encoded microcarriers for future combinatorial chemistry applications

A composite element (CE) bit design for magnetically encoded microcarriers provides an increased coercivity range for longer bit codes as well as significant improvements to encoding density, reliability and read-out.The authors gratefully acknowledge the EPSRC for financial support and thank Dr Andrew Thompson for valuable discussions. DL, TM and CHWB acknowledge the Cambridge Philosophical Society, the Lundgren Research Award, the Development of Prototype Grant (Innovate UK), the Brian Mercer Feasibility Award (Royal Society) and Cambridge Bio- Magnetics Ltd. AFP acknowledges the Winton Programme for the Physics of Sustainability.This is the final published version. It first appeared at http://pubs.rsc.org/en/Content/ArticleLanding/RA/2015/C4RA16991C#!divAbstract

Data set accompanying the letter "A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs ambipolar bilayers"

Coulomb drag and magnetotransport data from the ambipolar GaAs/AlGaAs 2D bilayer devices described in the associated publication, measured by the authors at the Cavendish Laboratory, University of Cambridge UK, in the period October 2013 to April 2016. The data were measured at low temperature (90 mK to 4 K). The experimental methods are described in the associated publication

A low-temperature Kerr effect microscope for the simultaneous magneto-optic and magneto-transport study of magnetic topological insulators

Magneto-optical Kerr effect (MOKE) microscopy is a surface-sensitive probe of magnetisation with micron-sized lateral resolution. Here, we present a low-temperature, focused polar MOKE microscope for the simultaneous magnetooptical and magneto-transport measurements, which has a temperature range of 1.6-300 K and is equipped with a magnet capable of delivering a field of up to 9 T. In this microscope, all optical components are integrated in a free-standing probe, allowing for the straightforward incorporation into many non-optical cryostat systems. Two-dimensional magnetisation scans on patterned ferromagnetic [CoFeB/Pt]n films demonstrate a magnetisation sensitivity of 10 µrad (Kerr angle) and a spatial resolution of 2.2 µm. The combination of optical and electrical measurements provides complementary temperature-dependent information, as demonstrated by the study of magnetic topological insulator thin films with out-of-plane magnetic anisotropy. Using this complementary approach, we study the effects of a secondary phase in Cr and V co-doped Sb2Te3 thin films, which show a combination of weak antilocalization and anisotropic magnetoresistance effects above 70 K. Our results highlight the virtue of MOKE and electrical transport to optimise exotic topological magnetic materials, paving the way for energy-efficient spintronic devices

A low-temperature Kerr effect microscope for the simultaneous magneto-optic and magneto-transport study of magnetic topological insulators

Magneto-optical Kerr effect (MOKE) microscopy is a surface-sensitive probe of magnetisation with micron-sized lateral resolution. Here, we present a low-temperature, focused polar MOKE microscope for the simultaneous magnetooptical and magneto-transport measurements, which has a temperature range of 1.6-300 K and is equipped with a magnet capable of delivering a field of up to 9 T. In this microscope, all optical components are integrated in a free-standing probe, allowing for the straightforward incorporation into many non-optical cryostat systems. Two-dimensional magnetisation scans on patterned ferromagnetic [CoFeB/Pt]n films demonstrate a magnetisation sensitivity of 10 µrad (Kerr angle) and a spatial resolution of 2.2 µm. The combination of optical and electrical measurements provides complementary temperature-dependent information, as demonstrated by the study of magnetic topological insulator thin films with out-of-plane magnetic anisotropy. Using this complementary approach, we study the effects of a secondary phase in Cr and V co-doped Sb2Te3 thin films, which show a combination of weak antilocalization and anisotropic magnetoresistance effects above 70 K. Our results highlight the virtue of MOKE and electrical transport to optimise exotic topological magnetic materials, paving the way for energy-efficient spintronic devices