Superconducting single photon detectors integrated with diamond nanophotonic circuits

Photonic quantum technologies promise to repeat the success of integrated nanophotonic circuits in non-classical applications. Using linear optical elements, quantum optical computations can be performed with integrated optical circuits and thus allow for overcoming existing limitations in terms of scalability. Besides passive optical devices for realizing photonic quantum gates, active elements such as single photon sources and single photon detectors are essential ingredients for future optical quantum circuits. Material systems which allow for the monolithic integration of all components are particularly attractive, including III-V semiconductors, silicon and also diamond. Here we demonstrate nanophotonic integrated circuits made from high quality polycrystalline diamond thin films in combination with on-chip single photon detectors. Using superconducting nanowires coupled evanescently to travelling waves we achieve high detection efficiencies up to 66 % combined with low dark count rates and timing resolution of 190 ps. Our devices are fully scalable and hold promise for functional diamond photonic quantum devices.Comment: 28 pages, 5 figure

Dynamics of Hotspot Formation in Nanostructured Superconducting Stripes Excited with Single Photons

Dynamics of a resistive hotspot formation by near-infrared-wavelength single photons in nanowire-type superconducting NbN stripes was investigated. Numerical simulations of ultrafast thermalization of photon-excited nonequilibrium quasiparticles, their multiplication and out-diffusion from a site of the photon absorption demonstrate that 1.55 μm wavelength photons create in an ultrathin, two-dimensional superconducting film a resistive hotspot with the diameter which depends on the photon energy, and the nanowire temperature and biasing conditions. Our hotspot model indicates that under the subcritical current bias of the 2D stripe, the electric field penetrates the superconductor at the hotspot boundary, leading to suppression of the stripe superconducting properties and accelerated development of a voltage transient across the stripe

Dynamics of Hotspot Formation in Nanostructured Superconducting Stripes Excited with Single Photons

Dynamics of a resistive hotspot formation by near-infrared-wavelength single photons in nanowire-type superconducting NbN stripes was investigated. Numerical simulations of ultrafast thermalization of photon-excited nonequilibrium quasiparticles, their multiplication and out-diffusion from a site of the photon absorption demonstrate that 1.55 μm wavelength photons create in an ultrathin, two-dimensional superconducting film a resistive hotspot with the diameter which depends on the photon energy, and the nanowire temperature and biasing conditions. Our hotspot model indicates that under the subcritical current bias of the 2D stripe, the electric field penetrates the superconductor at the hotspot boundary, leading to suppression of the stripe superconducting properties and accelerated development of a voltage transient across the stripe

Superconducting thermal neutron detectors

A neutron detection concept is presented that is based on superconductive niobium nitride (NbN) strips coated by a boron (B) layer. The working principle is well described by a hot spot mechanism: upon the occurrence of the nuclear reactions n + (10) B -> alpha + (7) Li + 2.8 MeV, the energy released by the secondary particles into the strip induces a superconducting-normal state transition. The latter is recognized as a voltage signal which is the evidence of the incident neutron. The above described detection principle has been experimentally assessed and verified by irradiating the samples with a pulsed neutron beam at the ISIS spallation neutron source (UK). It is found that the boron coated superconducting strips, kept at a temperature T below 11K and current-biased below the critical current IC, are driven into the normal state upon thermal neutron irradiation. Measurements on the counting rate of the device are presented and the basic physical features of the detector are discussed and compared to those of a borated Nb superconducting strip