GaN-based HEMTs on Low Resistivity Silicon Technology for Microwave Applications

This paper investigates the effect of insertion AlN spacer between the GaN channel and buffer in a sub-micron gate (0.3 μm) AlGaN/GaN HEMTs on a low-resistivity (LR) (σ < 10 Ω.cm) silicon substrates on RF performance. Enhancement in short circuit current gain (fT) and maximum frequency of oscillation (fMAX) was observed in the HEMT with a 1 nm AlN spacer, where (fT) and (fMAX) were increased from 47 GHz to 55 GHz and 79 GHz to 121 GHz, respectively. Small-signal-modelling analysis was carried out to study this improvement in performance. We found that the AlN interlayer played a crucial role in reducing the gate-source capacitance, Cgs, by 36 % and delay, τ, by 20 % under the gate, as a result of an increase in mobility and a reduction in trap-related effects

Effect Of AlN Spacer In The Layer Structure On High Rf Performance GaN-Based HEMTs On Low Resistivity Silicon At K-Band Application

AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown on Si substrate are emerging as an attractive devices for many RF applications. This is due to lower circuits realization cost and multifunction chips integration. In this study we investigate the effect of AlN spacer between AlGaN and GaN of a sub-micron gate (0.3 μm) AlGaN/GaN and AlGaN/AlN/GaN HEMTs on a Low Resistivity LR Si substrates on RF performance. We have observed an enhancement in RF performance fT and fMAX in the HEMT with of AlN spacer; (fT) was increased from 47 GHz to 55 GHz and (fMAX) was increased from 79 GHz to 121 GHz. This enhancement in performance is mainly due to the increase in the mobility in the channel and confinement of the carriers reducing Cgs, and delay τ under the gate. We believe this is the first RF study of this type as previous studies were based on the effects of the DC characteristic of the devices [1]

Passive Components Technology for THz-Monolithic Integrated Circuits (THz-MIC)

In this work, a viable passive components and transmission media technology is presented for THz-Monolithic Integrated Circuits (THz-MIC). The developed technology is based on shielded microstrip (S-MS) employing a standard monolithic microwave integrated circuit compatible process. The S-MS transmission media uses a 5-μm layer of benzocyclobutene (BCB) on shielded metalized ground plates avoiding any substrate coupling effects. An insertion loss of less than 3 dB/mm was achieved for frequencies up to 750 GHz. To prove the effectiveness of the technology, a variety of test structures, passive components and antennas have been design, fabricated and characterized. High Q performance was demonstrated making such technology a strong candidate for future THz-MIC technology for many applications such as radar, communications, imaging and sensing

Terahertz Monolithic Integrated Circuits (TMICs) Array Antenna Technology On GaN-on-Low Resistivity Silicon Substrates

In this paper, we have demonstrated a viable microstrip array patch antenna technology for the first time on GaN-on-low resistivity silicon (LR-Si) substrates (ρ <; 40 Ω.cm) at H-band frequencies (220-325 GHz). The developed technology is compatible with standard MMIC technology with no requirement for high temperature processes. To mitigate the losses presented by the substrate and to enhance the performance of the integrated array antenna at THz frequencies, the driven patch is shielded by silicon nitride and gold layer in addition to a layer of benzocyclobutene (BCB). The demonstrated 4×1 array integrated antenna showed a measured resonance frequency in agreement with our simulation at 0.27 THz; a measured S11 as low as -41 dB was obtained. A directivity, gain and radiation efficiency of 11.2 dB, 5.2 dB, and 20% respectively was observed from the 3D EM model for a 5 μm BCB inset. To the authors' knowledge, this is the first demonstration of a THz integrated microstrip array antenna for TMIC technology; this developed technology is promising for high performance III-V electronic material on low resistivity/high dielectric substrates

Effect Of AlN Spacer In The Layer Structure On High Rf Performance GaN-Based HEMTs On Low Resistivity Silicon At K-Band Application

AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown on Si substrate are emerging as an attractive devices for many RF applications. This is due to lower circuits realization cost and multifunction chips integration. In this study we investigate the effect of AlN spacer between AlGaN and GaN of a sub-micron gate (0.3 μm) AlGaN/GaN and AlGaN/AlN/GaN HEMTs on a Low Resistivity LR Si substrates on RF performance. We have observed an enhancement in RF performance fT and fMAX in the HEMT with of AlN spacer; (fT) was increased from 47 GHz to 55 GHz and (fMAX) was increased from 79 GHz to 121 GHz. This enhancement in performance is mainly due to the increase in the mobility in the channel and confinement of the carriers reducing Cgs, and delay τ under the gate. We believe this is the first RF study of this type as previous studies were based on the effects of the DC characteristic of the devices [1]

Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt and Ni based gate stacks

In this work, we report the performance of 3 μm gate length "dual barrier„ InAlN/AlGaN/GaN HEMTs on Si substrates with gate-drain contact separations in the range 4-26 μm. Devices with Pt and Ni based gates were studied and their leakage characteristics are compared. Maximum drain current IDS of 1 A/mm, maximum extrinsic transconductance gm ~203 mS/mm and on-resistance Ron 4.07 Ω mm for gate to drain distance LGD = 4 μm were achieved. Nearly ideal sub-threshold swing of 65.6 mV/dec was obtained for LGD = 14 μm. The use of Pt based gate metal stacks led to a two to three orders of magnitude gate leakage current decrease compared to Ni based gates. The influence of InAlN layer thickness on the transistor transfer characteristics is also discussed

Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

We investigate the impact of a fluorine plasma treatment used to obtain enhancement-mode operation on the structure and chemistry at the nanometer and atomic scales of an InAlN/GaN field effect transistor. The fluorine plasma treatment is successful in that enhancement mode operation is achieved with a +2.8 V threshold voltage. However, the InAlN barrier layers are observed to have been damaged by the fluorine treatment with their thickness being reduced by up to 50%. The treatment also led to oxygen incorporation within the InAlN barrier layers. Furthermore, even in the as-grown structure, Ga was unintentionally incorporated during the growth of the InAlN barrier. The impact of both the reduced barrier thickness and the incorporated Ga within the barrier on the transistor properties has been evaluated theoretically and compared to the experimentally determined two-dimensional electron gas density and threshold voltage of the transistor. For devices without fluorine treatment, the two-dimensional electron gas density is better predicted if the quaternary nature of the barrier is taken into account. For the fluorine treated device, not only the changes to the barrier layer thickness and composition, but also the fluorine doping needs to be considered to predict device performance. These studies reveal the factors influencing the performance of these specific transistor structures and highlight the strengths of the applied nanoscale characterisation techniques in revealing information relevant to device performance.</jats:p

Ozone modeling within plasmas for ozone sensor applications

Ozone (03) is potentially hazardous to human health and accurate prediction and measurement of this gas is essential in addressing its associated health risks. This paper presents theory to predict the levels of ozone concentration emittedfrom a dielectric barrier discharge (DBD) plasma for ozone sensing applications. This is done by postulating the kinetic model for ozone generation, with a DBD plasma at atmospheric pressure in air, in the form of a set of rate equations. Rate constants are taken from the literature and previously unconsidered ozone producing hydroxyl reactions are incorporated into the work, yielding more accurate results for the concentration of ozone for sensing applications. An application of this work is that knowing levels of ozone produced within an atmospheric DBD plasma allows for ozone sensors to be more accurately tuned to the particular requirements of the plasma system

Investigation of recombination effects in dielectric barrier dischanrges : a model

This paper outlines specific variations in recombination coefficients for charged particles (electrons and ions) and how these variations affect the onset of saturation of atmospheric pressure dielectric barrier discharges (DBDs). By solving continuity equations for electrons and ions, with the application of dielectric dependent boundary conditions, in conjunction with the Boltzmann equation, the effect of different recombination processes was modeled numerically. Incorporation of previously unconsidered atmospheric reactions into the continuity equations make this model unique for atmospheric air DBDs. The dependence of the recombination processes on kinetic temperature, field drift and autoionization were investigated and each pulse of the applied AC electric field was considered up to a saturation threshold2. Results show a strong dependence of the kinetic temperature of electrons on the recombination coefficient and it was additionally found that the plasma approached saturation more quickly when autoionization was considered. Figure 1 shows the evolution of electrons as they approach saturation when autoionization is considered

Development of an Atomic Layer Etch Process Via Repeated Cycling of Chloride Formation in Chlorine Gas and its Argon Plasma Removal for Precision Nanometer Scale Thin Layer Etch in GaN-Based Power Device Fabrications

No abstract available