Wafer-scale, epitaxial growth of single layer hexagonal boron nitride on Pt(111)

Single-layer hexagonal boron nitride is produced on 2 inch Pt(111)/sapphire wafers. The growth with borazine vapor deposition at process temperatures between 1000 and 1300 K is in situ investigated by photoelectron yield measurements. The growth kinetics is slower at higher temperatures and follows a tanh2 law which better fits for higher temperatures. The crystal-quality of hexagonal boron nitride (h-BN)/Pt(111) is inferred from scanning low energy electron diffraction (x-y LEED). The data indicate a strong dependence of the epitaxy on the growth temperature. The dominant structure is an aligned coincidence lattice with 10 h-BN on 9 Pt(1 × 1) unit cells and follows the substrate twinning at the millimeter scale

4-Channel C-band WDM transmitter based on 10 GHz graphene-silicon electro-absorption modulators

We demonstrate three 4-channelWDMtransmitters, each based on four graphenesilicon electro-absorption modulators with passivated graphene, achieving similar to 2.6dB insertion loss, similar to 5.5dB extinction ratio for 8V voltage swing and similar to 10GHz 3dB-bandwidth at 0V DC bias

Capacitive actuation and switching of add\u2013drop graphene-silicon micro-ring filters

We propose and experimentally demonstrate capacitive actuation of a graphene\u2013silicon micro-ring add/drop filter. The mechanism is based on a silicon\u2013SiO2\u2013graphene capacitor on top of the ring waveguide. We show the capacitive actuation of the add/drop functionality by a voltage-driven change of the graphene optical absorption. The proposed capacitive solution overcomes the need for continuous heating to keep tuned the filter\u2019s in/out resonance and therefore eliminates \u201cin operation\u201d energy consumption

Enhanced Thermal Conductivity of Free-Standing Double-Walled Carbon Nanotube Networks

Nanomaterials are driving advances in technology due to their oftentimes superior properties over bulk materials. In particular, their thermal properties become increasingly important as efficient heat dissipation is required to realize high-performance electronic devices, reduce energy consumption, and prevent thermal damage. One application where nanomaterials can play a crucial role is extreme ultraviolet (EUV) lithography, where pellicles that protect the photomask from particle contamination have to be transparent to EUV light, mechanically strong, and thermally conductive in order to withstand the heat associated with high-power EUV radiation. Free-standing carbon nanotube (CNT) films have emerged as candidates due to their high EUV transparency and ability to withstand heat. However, the thermal transport properties of these films are not well understood beyond bulk emissivity measurements. Here, we measure the thermal conductivity of free-standing CNT films using all-optical Raman thermometry at temperatures between 300 and 700 K. We find thermal conductivities up to 50 W m-1 K-1 for films composed of double-walled CNTs, which rises to 257 W m-1 K-1 when considering the CNT network alone. These values are remarkably high for randomly oriented CNT networks, roughly seven times that of single-walled CNT films. The enhanced thermal conduction is due to the additional wall, which likely gives rise to additional heat-carrying phonon modes and provides a certain resilience to defects. Our results demonstrate that free-standing double-walled CNT films efficiently dissipate heat, enhancing our understanding of these promising films and how they are suited to applications in EUV lithography.</p

Enhanced Thermal Conductivity of Free-Standing Double-Walled Carbon Nanotube Networks

Nanomaterials are driving advances in technology due to their oftentimes superior properties over bulk materials. In particular, their thermal properties become increasingly important as efficient heat dissipation is required to realize high-performance electronic devices, reduce energy consumption, and prevent thermal damage. One application where nanomaterials can play a crucial role is extreme ultraviolet (EUV) lithography, where pellicles that protect the photomask from particle contamination have to be transparent to EUV light, mechanically strong, and thermally conductive in order to withstand the heat associated with high-power EUV radiation. Free-standing carbon nanotube (CNT) films have emerged as candidates due to their high EUV transparency and ability to withstand heat. However, the thermal transport properties of these films are not well understood beyond bulk emissivity measurements. Here, we measure the thermal conductivity of free-standing CNT films using all-optical Raman thermometry at temperatures between 300 and 700 K. We find thermal conductivities up to 50 W m-1 K-1 for films composed of double-walled CNTs, which rises to 257 W m-1 K-1 when considering the CNT network alone. These values are remarkably high for randomly oriented CNT networks, roughly seven times that of single-walled CNT films. The enhanced thermal conduction is due to the additional wall, which likely gives rise to additional heat-carrying phonon modes and provides a certain resilience to defects. Our results demonstrate that free-standing double-walled CNT films efficiently dissipate heat, enhancing our understanding of these promising films and how they are suited to applications in EUV lithography.</p

New materials for modulators and switches in silicon photonics

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Case studies of electrical characterisation of graphene by terahertz time-domain spectroscopy

Graphene metrology needs to keep up with the fast pace of developments in graphene growth and transfer. Terahertz time-domain spectroscopy (THz-TDS) is a non-contact, fast, and non-destructive characterization technique for mapping the electrical properties of graphene. Here we show several case studies of graphene characterization on a range of different substrates that highlight the versatility of THz-TDS measurements and its relevance for process optimization in graphene production scenarios

Taking 2D materials from lab to tab, and to technology

status: publishe

Graphene delamination using ‘electrochemical methods’: An ion intercalation effect

The mechanism of graphene delamination from a Pt catalyst growth surface with electrochemical methods is studied. After a water intercalation step, an electrochemical graphene delamination process is done with a variety of different electrolytes. It is shown that (hydrogen or oxygen) bubble formation is not the main driving force to decouple graphene from its catalyst growth substrate. Ion intercalation is identified as the primary component for a fast graphene delamination process from its catalytic growth substrate. When the Pt/graphene sample is negatively charged, cations will intercalate, assuming they do not reduce within the electrochemical window of the solvent. This cation intercalation does result in graphene delamination. In the same way, anions intercalate in positively charged Pt/graphene samples when they do not react within the electrochemical window of the solvent. Furthermore, it is shown that applying a potential is sufficient (current is not needed) to induce ion intercalation and, as a result, graphene delamination. These findings open the door to avoid Na+ or K+ contamination introduced during currently described electrochemical graphene delamination. Alternative electrolytes (i.e. ammonium hydroxide and tetraethylammonium hydroxide) are proposed, due to the absence of alkali contaminants and rapid cation intercalation to delaminate graphene.The journal details (volume, issue and pagenumbers) are not known yet.status: publishe