High Curie temperature Mn 5 Ge 3 thin films produced by non-diffusive reaction

Polycrystalline Mn 5 Ge 3 thin films were produced on SiO 2 using magnetron sputtering and reactive diffusion (RD) or non-diffusive reaction (NDR). In situ X-ray diffraction and atomic force microscopy were used to determine the layer structures, and magnetic force microscopy, superconducting quantum interference device and ferromagnetic resonance were used to determine their magnetic properties. RD-mediated layers exhibit similar magnetic properties as MBE-grown monocrystalline Mn 5 Ge 3 thin films, while NDR-mediated layers show magnetic properties similar to monocrystalline C-doped Mn 5 Ge 3 C x thin films with $0.1 \leq x \leq 0.2.$ NDR appears as a CMOS-compatible efficient method to produce good magnetic quality high-curie temperature Mn 5 Ge 3 thin films

Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography

Superconducting boron-doped silicon films prepared by gas immersion laser doping (GILD) technique are analyzed by atom probe tomography. The resulting three-dimensional chemical composition reveals that boron atoms are incorporated into crystalline silicon in the atomic percent concentration range, well above their solubility limit, without creating clusters or precipitates at the atomic scale. The boron spatial distribution is found to be compatible with local density of states measurements performed by scanning tunneling spectroscopy. These results, combined with the observations of very low impurity level and of a sharp two-dimensional interface between doped and undoped regions show, that the Si:B material obtained by GILD is a well-defined random substitutional alloy endowed with promising superconducting properties.Comment: 4 page

VACANCY-MEDIATED ATOMIC TRANSPORT IN NANO-CRYSTALS

International audienceAtomic transport in nano-crystals is still poorly studied experimentally. However, the knowledge of atomic transport kinetic and of the mechanisms allowing atoms to move in a volume exhibiting nano-scale dimensions (< 100 nm) is important for i) improving our fundamental knowledge concerning point defects' formation and migration energies, and atom-point defect interactions in nano-structures, as well as for ii) predicting mass transport in nano-structures, allowing the design of nano-structure fabrication processes to be developed at lower cost. In this article, atom probe tomography measurements were used to investigate the Ge distribution in 40 nm-wide Si nano-crystals in which the Ge flux was found to be ten times faster than in the bulk of a Si mono-crystal. The Ge atoms were found to be randomly distributed in the nano-crystals. No extended defect was found being able to explain an increase of Ge transport kinetic in the nano-crystals. Consequently, a scenario based on a higher equilibrium vacancy concentration at the nano-crystal surface (or interface) is proposed in order to explain the faster atomic kinetic measured in Si nano-crystals

Te homogeneous precipitation in Ge dislocation loop vicinity

International audienceHigh resolution microscopies were used to study the interactions of Te atoms with Ge dislocation loops, after a standard n-type doping process in Ge. Te atoms neither segregate nor precipitate on dislocation loops, but form Te-Ge clusters at the same depth as dislocation loops, in contradiction with usual dopant behavior and thermodynamic expectations. Atomistic kinetic Monte Carlo simulations show that Te atoms are repulsed from dislocation loops due to elastic interactions, promoting homogeneous Te-Ge nucleation between dislocation loops. This phenomenon is enhanced by coulombic interactions between activated Te2þ or Te1þ ions

Effect of external stress on the Fe–Cr phase separation in 15-5 PH and Fe–15Cr–5Ni alloys

The effect on Fe–Cr phase separation of a uniaxial stress during thermal ageing at 4251C is investigated on a Fe–15Cr–5Ni steel, a model alloy of commercial 15-5 PH steel. The applied stress is shown to accelerate the ageing kinetics, and influence the morphology of Cr rich domains. A dependence of the phase separation decomposition kinetics on the relative orientations of the load and the crystal local orientation has also been observed

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

International audienceIn this work a novel process allowing for the production of nanoporous Ge thin films is presented. This process uses the combination of two techniques: Ge sputtering on SiO 2 and dopant ion implantation. The process entails four successive steps: (i) Ge sputtering on SiO 2 , (ii) implantation preannealing, (iii) high-dose dopant implantation, and (iv) implantation postannealing. Scanning electron microscopy and transmission electron microscopy were used to characterize the morphology of the Ge film at different process steps under different postannealing conditions. For the same postannealing conditions, the Ge film topology was shown to be similar for different implantation doses and different dopants. However, the film topology can be controlled by adjusting the postannealing conditions

SEARCH FOR NEUTRINO OSCILLATION AT BUGEY

The high flux of low energy [MATH]e produced by the core of a PWR reactor of Bugey power plant has been used to search for evidence of neutrino oscillations through the inverse beta decay reaction [MATH]e + p → e+ + n. Measurements have been performed at two distances (13.5 and 18.5m). About 50 000 [MATH]e events have been collected at the first position and 25 000 [MATH]e events at the second one. Data analysis is almost completed

Room-temperature magnetoelectric effect in lead-free multiferroic (1−x)(1-x) Ba0.95_{0.95}Ca0.05_{0.05}Ti0.89_{0.89}Sn0.11_{0.11}O3_3-(x)(x)CoFe2_2O4_4 particulate composites

Multiferroic particulate composites $(1-x)$ Ba$_{0.95}$Ca$_{0.05}$Ti$_{0.89}$Sn$_{0.11}$O$_3$-$(x)$CoFe$_2$O$_4$ with ($x$ = 0.1, 0.2, 0.3, 0.4 and 0.5) have been prepared by mechanical mixing of the calcined and milled individual ferroic phases. X-ray diffraction and Raman spectroscopy analysis confirmed the formation of both perovskite Ba$_{0.95}$Ca$_{0.05}$Ti$_{0.89}$Sn$_{0.11}$O$_3$ (BCTSn) and spinel CoFe$_2$O$_4$ (CFO) phases without the presence of additional phases. The morphological properties of the composites were provided by using Field Emission Scanning Electron Microscopy. The BCTSn-CFO composites exhibit multiferroic behavior at room temperature, as evidenced by ferroelectric and ferromagnetic hysteresis loops. The magnetoelectric (ME) coupling was measured under a magnetic field up to 10 kOe and the maximum ME response found to be 0.1 mV /cm/ Oe for the composition 0.7 BCTSn-0.3 CFO exhibiting a high degree of pseudo-cubicity and large density

Nanogeochronology of discordant zircon measured by atom probe microscopy of Pb-enriched dislocation loops

Isotopic discordance is a common feature in zircon that can lead to an erroneous age determination, and it is attributed to the mobilization and escape of radiogenic Pb during its post-crystallization geological evolution. The degree of isotopic discordance measured at analytical scales of ~10 µm often differs among adjacent analysis locations, indicating heterogeneous distributions of Pb at shorter length scales. We use atom probe microscopy to establish the nature of these sites and the mechanisms by which they form. We show that the nanoscale distribution of Pb in a ~2.1 billion year old discordant zircon that was metamorphosed c. 150 million years ago is defined by two distinct Pb reservoirs. Despite overall Pb loss during peak metamorphic conditions, the atom probe data indicate that a component of radiogenic Pb was trapped in 10-nm dislocation loops that formed during the annealing of radiation damage associated with the metamorphic event. A second Pb component, found outside the dislocation loops, represents homogeneous accumulation of radiogenic Pb in the zircon matrix after metamorphism. The (207)Pb/(206)Pb ratios measured from eight dislocation loops are equivalent within uncertainty and yield an age consistent with the original crystallization age of the zircon, as determined by laser ablation spot analysis. Our results provide a specific mechanism for the trapping and retention of radiogenic Pb during metamorphism and confirm that isotopic discordance in this zircon is characterized by discrete nanoscale reservoirs of Pb that record different isotopic compositions and yield age data consistent with distinct geological events. These data may provide a framework for interpreting discordance in zircon as the heterogeneous distribution of discrete radiogenic Pb populations, each yielding geologically meaningful ages