MODELING DIFFERENTIATED TREATMENT EFFECTS FOR MULTIPLE OUTCOMES DATA

Multiple outcomes data are commonly used to characterize treatment effects in medical research, for instance, multiple symptoms to characterize potential remission of a psychiatric disorder. Often either a global, i.e. symptom-invariant, treatment effect is evaluated. Such a treatment effect may over generalize the effect across the outcomes. On the other hand individual treatment effects, varying across all outcomes, are complicated to interpret, and their estimation may lose precision relative to a global summary. An effective compromise to summarize the treatment effect may be through patterns of the treatment effects, i.e. differentiated effects. In this paper we propose a two-category model to differentiate treatment effects into two groups. A model fitting algorithm and simulation study are presented, and several methods are developed to analyze heterogeneity presenting in the treatment effects. The method is illustrated using an analysis of schizophrenia symptom data

AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels

AlN and Al oxy-nitride dielectric layers are proposed instead of Al$_2$O$_3$ as a component of the gate dielectric stacks on higher mobility channels in metal oxide field effect transistors to improve their positive bias stress instability reliability. It is calculated that the gap states of nitrogen vacancies in AlN lie further away in energy from the semiconductor band gap than those of oxygen vacancies in Al$_2$O$_3$, and thus AlN might be less susceptible to charge trapping and have a better reliability performance. The unfavourable defect energy level distribution in amorphous Al$_2$O$_3$ is attributed to its larger coordination disorder compared to the more symmetrically bonded AlN. Al oxy-nitride is also predicted to have less tendency for charge trapping.EPSRCThis is the author accepted manuscript. The final version is available from the American Institute of Physics via http://dx.doi.org/10.1063/1.495100

Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge.

Density functional supercell calculations of the Schottky barrier heights (SBH) of metal germanides and silicides on Si or Ge find that these vary with the facet, unlike those of elemental metals. In addition, silicides and germanides show a stronger dependence of their SBHs on the work function than those of elemental metals, as seen experimentally. Both effects are beyond the standard metal induced gap states model. NiSi2 is found to have a much lower SBH on n-Si(100) than on n-Si(111), as seen experimentally. It is shown how such results can be used to design lower SBH contacts for n-Ge, which are needed technologically. The SBHs of the better behaved Si/silicide interfaces can be used to benchmark the behavior of the less well behaved Ge-germanide interfaces for this purpose. The dependence of the SBH of epitaxial Pb-Si(111) on its reconstruction is also covered

Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors.

Hydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. Using amorphous ZnO as a simplified model system, we show that the hydrogens pair up at oxygen vacancies in the amorphous network, where they form metal-H-metal bridge bonds. These bonds are shown to create filled defect gap states lying just above the valence band edge and they are shown to give a consistent mechanism to explain the negative bias illumination stress instability found in oxide semiconductors like In-Ga-Zn-O (IGZO)

Compromiso con el trabajo y rendimiento en el trabajo: el papel moderador del apoyo organizacional percibido.

The present research was aim to examine whether the relationship between work engagement and objective task performance is moderated by perceived organizational support (POS). Based on the existing literature, perceived organizational support is hypothesized to strengthen the positive association between employees’ work engagement and their objective task performance. The hypotheses were tested on a sample of 1049 employees. Results of hierarchical regression analysis show that: (1) work engagement is positively related to objective task performance, and (2) the relationship between work engagement and objective task performance is moderated by POS, such that the positive relationship is more significant when POS higher than lower. In the end, theoretical and practical implications, and suggestions for future research are discussed.La presente investigación tuvo el objetivo de examinar si la relación entre compromiso con el trabajo y el rendimiento en los objetivos de las tareas está moderada por el apoyo perceptivo de la organización (APO). En base a la literatura existente, el apoyo percibido de la organización se hipotetiza que fortalece la asociación positiva entre el compromiso laboral de los empleados y su rendimiento en los objetivos de las tareas. Las hipótesis fueron comprobadas en una muestra de 1049 empleados. Los resultados del análisis de regresión jerárquico muestran que: (1) el compromiso en el trabajo está positivamente relacionado con el rendimiento en los objetivos de las tareas, y (2) la relación entre compromiso en el trabajo y el rendimiento en los objetivos de las tareas está moderado por el APO, de modo que la relación positiva es más significativa cuando el APO es mayor. Al final se discuten las implicaciones teóricas y prácticas, y las sugerencias para futuras investigaciones