Metallic phase in the metal-intercalated higher fullerene Rb8.8(7)C84

A new material of higher fullerene, RbxC84, was synthesized by intercalating Rb metal into C-84 crystals. The RbxC(84) crystals showed a simple cubic (sc) structure with lattice constant, a, of 16.82 (2) angstrom at 6.5 K, and 16.87 (2) angstrom at 295 K. The Rietveld refinements were achieved with the space group, Pa (3) over bar, based on a model that the C-2 axis of D2d-C84 aligned along [111]. The sample composition was determined to be Rb-8.8(7) C-84. The ESR spectrum at 303 K was composed of a broad peak with peak-to-peak linewidth Delta H-pp of 220 G, and a narrow peak with Delta H-pp of 24 G. Temperature dependence of the broad peak clearly showed a metallic behavior. The metallic behavior was discussed based on a theoretical calculation. This finding of new metallic phase in a higher fullerene is the first step for a development of new types of fullerene materials with novel physical properties such as superconductivity.</p

A Nuclear Magnetic Resonance Study on Rubrene-cobalt Nano-composites

We implemented a nuclear magnetic resonance (NMR) study on rubrene(C42H28)-Co nano-composites that exhibit an enhanced magnetoresistance (MR) ratio of 80%. The 59Co NMR spin echo experiment enabled clarification of the hyperfine field of Co at the interface between the ferromagnet and the molecules, which has not been investigated for molecular spintronics. An enhanced hyperfine field of the Co was observed in the rubrene-Co nano-composites, which may be related to the enhancement of the MR ratio. This study demonstrates the importance of microscopic investigation of the interface between molecules and ferromagnets that governs spin-dependent transport in molecular spin devices.Comment: 12pages, 3 figures, 1 tabl

Fabrication of field-effect transistor device with higher fullerene, C₈₈

A fullerene field-effect transistor (FET) device has been fabricated with thin films of C88, and n-channel normally-on depletion-type FET properties have been found in this FET device. The C88 FET exhibited a high mobility, &#956;, of 2.5 x 10-3 cm2 V-1 s-1 at 300 K, in fullerene FETs. The carrier transport showed a thermally-activated hopping transport. The n-channel normally-on FET properties and the hopping transport reflect the small mobility gap and low carrier concentration in the channel region of C88 thin-films.</p

Fabrication of a logic gate circuit based on ambipolar field-effect transistors with thin films of C₆₀ and pentacene

Ambipolar field-effect transistor (FET) devices were fabricated with a heterostructure of C60 and pentacene, and their p- and n-channel field-effect mobilities were studied as a function of thickness of pentacene thin-films. The observed dependences of the μ values were interpreted in terms of the morphology of the thin films and the band structure of C60/pentacene heterostructure. A complementary metal-oxide-semiconductor (CMOS) circuit was fabricated by integration of two ambipolar FETs, aiming at realization of a new CMOS inverter circuit composed of FETs with the same device structure. The gain of 4, the threshold voltage of 85 V, and the complex output characteristics were explained on the basis of the properties of the component FET devices.</p