Self-assembly of 3D fennel-like Co3O4 with thirty-six surfaces for high performance supercapacitor

Three-dimensional (3D) fennel-like cobalt oxide (II,III) (Co3O4) particles with thirty-six surfaces on nickel foams were prepared via a simple hydrothermal synthesis method and its growth process was also researched. The crystalline structure and morphology were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy. The Brunauer-Emmett Teller (BET) analysis revealed that 3D fennel-like Co3O4 particles have high specific surface area. Therefore, the special structure with thirty-six surfaces indicates the good electrochemical performance of the micron-nanometer material as electrode material for supercapacitors. The cyclic voltammetry (CV), galvanostatic charge-discharge, and electrochemical impedance spectroscopy (EIS) were conducted to evaluate the electrochemical performances. Compared with other morphological materials of the similar sizes, the Co3O4 particles on nickel foam exhibit a high specific capacitance of 384.375 F.g(-1) at the current density of 3A.g(-1) and excellent cycling stability of a capacitance retention of 96.54% after 1500 galvanostatic charge-discharge cycles in 6M potassium hydroxide (KOH) electrolyte

Effect of zinc acetate concentration on optimization of photocatalytic activity of p-Co3O4/n-ZnO heterostructures

In this work, p-Co3O4/n-ZnO heterostructures were fabricated on Ni substrate by hydrothermal-decomposition method using cobaltous nitrate hexahydrate (Co(NO3)(2)center dot 6H(2)O) and zinc acetate dihydrate (Zn(CH3COO)(2)center dot 2H(2)O) as precursors with zinc acetate concentration varying from 5.0 to 55.0 mM. Structure and morphology of the developed samples were characterized by X-ray diffraction (XRD), Raman spectroscopy, and scanning electron microscopy (SEM). Effect of zinc acetate concentration on the photocatalytic activity of p-Co3O4/n-ZnO heterostructures was investigated by degradation of methyl orange (MO) under the UV light irradiation. The fabricated p-Co3O4/n-ZnO heterostructures exhibited higher photocatalytic activity than pure Co3O4 particles. In order to obtain the maximum photocatalytic activity, zinc acetate concentration was optimized. Specifically, at 35 mM of zinc acetate, the p-Co3O4/n-ZnO showed the highest photocatalytic activity with the degradation efficiency of MO reaching 89.38% after 72 h irradiation. The improvement of photocatalytic performance of p-Co3O4/n-ZnO heterostructures is due to the increased concentration of photo-generated holes on Co3O4 surface and the higher surface-to-volume ratio in the hierarchical structure formed by nano-lamellas

Nanostructure-induced performance degradation of WO3·nH2O for energy conversion and storage devices

Although 2D layered nanomaterials have been intensively investigated towards their application in energy conversion and storage devices, their disadvantages have rarely been explored so far especially compared to their 3D counterparts. Herein, WO3 center dot nH(2)O (n = 0, 1, 2), as the most common and important electrochemical and electrochromic active nanomaterial, is synthesized in 3D and 2D structures through a facile hydrothermal method, and the disadvantages of the corresponding 2D structures are examined. The weakness of 2D WO3 center dot nH(2)O originates from its layered structure. X-ray diffraction and scanning electron microscopy analyses of as-grown WO3 center dot nH(2)O samples suggest a structural transition from 2D to 3D upon temperature increase. 2D WO3 center dot nH(2)O easily generates structural instabilities by 2D intercalation, resulting in a faster performance degradation, due to its weak interlayer van der Waals forces, even though it outranks the 3D network structure in terms of improved electronic properties. The structural transformation of 2D layered WO3 center dot nH(2)O into 3D nanostructures is observed via ex situ Raman measurements under electrochemical cycling experiments. The proposed degradation mechanism is confirmed by the morphology changes. The work provides strong evidence for and in-depth understanding of the weakness of 2D layered nanomaterials and paves the way for further interlayer reinforcement, especially for 2D layered transition metal oxides

Functionalizing new intercalation chemistry for sub-nanometer-scaled interlayer engineering of 2D transition metal oxides and chalcogenides

Intercalation in bulk layered materials has been investigated intensively in the last 60 years. However, the rise of 2D few-layered nanomaterials such as transition metal oxides and chalcogenides opened up thrilling opportunities for the new era of intercalation as it is almost guaranteed that new phenomena will be observed with the intercalation of ions and molecules into few-layered nanomaterials due to the quantum confinement effect at the 2D scale. In this progress report, the advances of the 2D intercalation chemistry in the few-layered oxides and chalcogenides of molybdenum and tungsten are highlighted with respect to its concept, structure, implementation, identification, property modulation, and applications. The perspective and outlook concerning its current obstacles and future opportunities are addressed. The 2D intercalation chemistry in few-layered nanomaterials is still under its infant stage. The new intercalation phenomena behind the interlayer engineering of few-layered nanomaterials need to be discovered and further comprehensively exploited. It is strongly believed that with more attentions and efforts put into this spring field, the few-layered 2D nanomaterials will make great impact on the nanoscience and nanotechnology, enabling them more profound than their microstructural counterparts and even their monolayers

Development of single layer of WO3 on large spatial resolution by atomic layer deposition technique

Unique and distinctive properties could be obtained on such two-dimensional (2D) semiconductor as tungsten trioxide (WO3) when the reduction from multi-layer to one fundamental layer thickness takes place. This transition without damaging single-layer on a large spatial resolution remained elusive until the atomic layer deposition (ALD) technique was utilized. Here we report the ALD-enabled atomic-layer-precision development of a single layer WO3 with thickness of 0.77±0.07 nm on a large spatial resolution by using (tBuN)2W(NMe2)2 as tungsten precursor and H2O as oxygen precursor, without affecting the underlying SiO2/Si substrate. Versatility of ALD is in tuning recipe in order to achieve the complete WO3 with desired number of WO3 layers including monolayer. Governed by self-limiting surface reactions, the ALD-enabled approach is versatile, scalable and applicable for a broader range of 2D semiconductors and various device applications