Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics

Gate capacitance of metal-oxide-semiconductor devices with ultra-thin high-K gate-dielectric materials is calculated taking into account the penetration of wave functions into the gate-dielectric. When penetration effects are neglected, the gate capacitance is independent of the dielectric material for a given equivalent oxide thickness (EOT). Our selfconsistent numerical results show that in the presence of wave function penetration, even for the same EOT, gate capacitance depends on the gate-dielectric material. Calculated gate capacitance is higher for materials with lower conduction band offsets with silicon. We have investigated the effects of substrate doping density on the relative error in gate capacitance due to neglecting wave function penetration. It is found that the error decreases with increasing doping density. We also show that accurate calculation of the gate capacitance including wave function penetration is not critically dependent on the value of the electron effective mass in the gate-dielectric region

Edge-locking and quantum control in highly polarized spin chains

For an open-boundary spin chain with anisotropic Heisenberg (XXZ) interactions, we present states in which a connected block near the edge is polarized oppositely to the rest of the chain. We show that such blocks can be `locked' to the edge of the spin chain, and that there is a hierarchy of edge-locking effects at various orders of the anisotropy. The phenomenon enables dramatic control of quantum state transmission: the locked block can be freed by flipping a single spin or a few spins.Comment: 4 pages, 4 figure

Modeling of the excited modes in inverted embedded microstrip lines using the finite-difference time-domain (FDTD) technique

This thesis investigates the presence of multiple (quasi-TEM) modes in inverted embedded microstrip lines. It has already been shown that parasitic modes do exist in inverted embedded microstrips due to field leakage inside the dielectric substrate, especially for high dielectric constants (like Silicon). This thesis expands upon that work and characterizes those modes for a variety of geometrical dimensions. Chapter 1 focuses on the theory behind the different transmission line modes, which may be present in inverted embedded microstrips. Based on the structure of the inverted embedded microstrip, the conventional microstrip mode, the quasi-conventional microstrip mode, and the stripline mode are expected. Chapter 2 discusses in detail the techniques used to decompose the total probed field into the various modes present in the inverted embedded microstrip lines. Firstly, a short explanation of the finite-difference time-domain method, that is used for the simulation and modeling of inverted microstrips up to 50 GHz is provided. Next, a flowchart of the process involved in decomposing the modes is laid out. Lastly, the challenges of this approach are also highlighted to give an appreciation of the difficulty in obtaining accurate results. Chapter 3 shows the results (dispersion diagrams, values/percentage of the individual mode energies ) obtained after running time-domain simulations for a variety of geometrical dimensions. Chapter 4 concludes the thesis by explaining the results in terms of the transmission line theory presented in Chapter 1. Next, possible future work is mentioned.M.S.Committee Chair: Tentzeris, Emmanouil; Committee Member: Andrew Peterson; Committee Member: Laskar, Joy; Committee Member: Papapolymerou, Ioanni

Parting, Praying: Three Poems

Three poems: 'Friends and Lovers', 'A Stanza on Linguistic Communalism' and 'A Prayer for my Teacher