231 research outputs found
Spin-orbit coupling and phase-coherence in InAs nanowires
We investigated the magnetotransport of InAs nanowires grown by selective
area metal-organic vapor phase epitaxy. In the temperature range between 0.5
and 30 K reproducible fluctuations in the conductance upon variation of the
magnetic field or the back-gate voltage are observed, which are attributed to
electron interference effects in small disordered conductors. From the
correlation field of the magnetoconductance fluctuations the phase-coherence
length l_phi is determined. At the lowest temperatures l_phi is found to be at
least 300 nm, while for temperatures exceeding 2 K a monotonous decrease of
l_phi with temperature is observed. A direct observation of the weak
antilocalization effect indicating the presence of spin-orbit coupling is
masked by the strong magnetoconductance fluctuations. However, by averaging the
magnetoconductance over a range of gate voltages a clear peak in the
magnetoconductance due to the weak antilocalization effect was resolved. By
comparison of the experimental data to simulations based on a recursive
two-dimensional Green's function approach a spin-orbit scattering length of
approximately 70 nm was extracted, indicating the presence of strong spin-orbit
coupling.Comment: 8 pages, 7 figure
The distance between P680 and QA in Photosystem II determined by ESEEM spectroscopy
AbstractLight induced spin-polarized P680+Q−A radical pairs were studied by two pulse electron spin echo envelope modulation (ESEEM) spectroscopy in the cyanide-treated and Zn-substituted Photosystem II core complexes and in the isolated D1-D2-cyt b559 reaction center complexes reconstituted with dibromoisopropyl-p-benzoquinone. The observed strong out-of phase ESEEM signals were identified as those of the P680+Q−A radical pairs based on the time variation of the transient CW EPR spectra. The shapes of ESEEM spectra were attributed to dipolar D and spin exchange J interactions in the radical pairs. The values of D and J were derived from a sine Fourier transformation and the center-to-center distance between P680 and QA was determined to be 27.2±1.0Å for all three preparations
Low-field magnetoresistance in GaAs 2D holes
We report low-field magnetotransport data in two-dimensional hole systems in
GaAs/AlGaAs heterostructures and quantum wells, in a large density range, cm, with primary focus on
samples grown on (311)A GaAs substrates. At high densities, cm, we observe a remarkably strong positive magnetoresistance.
It appears in samples with an anisotropic in-plane mobility and predominantly
along the low-mobility direction, and is strongly dependent on the
perpendicular electric field and the resulting spin-orbit interaction induced
spin-subband population difference. A careful examination of the data reveals
that the magnetoresistance must result from a combination of factors including
the presence of two spin-subbands, a corrugated quantum well interface which
leads to the mobility anisotropy, and possibly weak anti-localization. None of
these factors can alone account for the observed positive magnetoresistance. We
also present the evolution of the data with density: the magnitude of the
positive magnetoresistance decreases with decreasing density until, at the
lowest density studied ( cm), it vanishes and is
replaced by a weak negative magnetoresistance.Comment: 8 pages, 8 figure
Tensile Fracture of Welded Polymer Interfaces: Miscibility, Entanglements and Crazing
Large-scale molecular simulations are performed to investigate tensile
failure of polymer interfaces as a function of welding time . Changes in the
tensile stress, mode of failure and interfacial fracture energy are
correlated to changes in the interfacial entanglements as determined from
Primitive Path Analysis. Bulk polymers fail through craze formation, followed
by craze breakdown through chain scission. At small welded interfaces are
not strong enough to support craze formation and fail at small strains through
chain pullout at the interface. Once chains have formed an average of about one
entanglement across the interface, a stable craze is formed throughout the
sample. The failure stress of the craze rises with welding time and the mode of
craze breakdown changes from chain pullout to chain scission as the interface
approaches bulk strength. The interfacial fracture energy is calculated
by coupling the simulation results to a continuum fracture mechanics model. As
in experiment, increases as before saturating at the average
bulk fracture energy . As in previous simulations of shear strength,
saturation coincides with the recovery of the bulk entanglement density. Before
saturation, is proportional to the areal density of interfacial
entanglements. Immiscibiltiy limits interdiffusion and thus suppresses
entanglements at the interface. Even small degrees of immisciblity reduce
interfacial entanglements enough that failure occurs by chain pullout and
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