162 research outputs found

    Hysteresis in the electronic transport of V2O3 thin films: non-exponential kinetics and range scale of phase coexistence

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    The thermal hysteresis of the electronic transport properties were studied for V2O3 thin films. The temporal evolution of the resistance shows the out-of-equilibrium nature of this hysteresis with a very slow relaxation. Partial cycles reveal not only a behavior consistent with phase coexistence, but also the presence of spinodal temperatures which are largely separated. The temperature spreading of phase coexistence is consistent with the bulk phase diagram in the pressure-temperature plane, confirming that the film is effectively under an effective pressure induced by the substrate.Comment: Accepted for publication in Europhysics Letter

    Structure determination of a brownmillerite Ca2Co2O5 thin film by Precession Electron Diffraction

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    Calcium cobaltite thin films with a ratio Ca/Co=1 were grown on (101)-NdGaO3 substrate by the pulsed laser deposition technique. The structure of the deposited metastable phase is solved using a precession electron diffraction 3D dataset recorded from a cross-sectional sample. It is shown that an ordered oxygen-deficient Ca2Co2O5+d perovskite of the brownmillerite-type with lattice parameters a= 0.546nm, b=1.488nm and c=0.546nm (SG: Ibm2) has been stabilized using the substrate induced strain. The structure and microstructure of this metastable cobaltite is further discussed and compared to related bulk materials based on our transmission electron microscopy investigationsComment: 13 pages, 10 figures, 2 tables, accepted in Phys. Rev.

    SPORT: A new sub-nanosecond time-resolved instrument to study swift heavy ion-beam induced luminescence - Application to luminescence degradation of a fast plastic scintillator

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    We developed a new sub-nanosecond time-resolved instrument to study the dynamics of UV-visible luminescence under high stopping power heavy ion irradiation. We applied our instrument, called SPORT, on a fast plastic scintillator (BC-400) irradiated with 27-MeV Ar ions having high mean electronic stopping power of 2.6 MeV/\mu m. As a consequence of increasing permanent radiation damages with increasing ion fluence, our investigations reveal a degradation of scintillation intensity together with, thanks to the time-resolved measurement, a decrease in the decay constant of the scintillator. This combination indicates that luminescence degradation processes by both dynamic and static quenching, the latter mechanism being predominant. Under such high density excitation, the scintillation deterioration of BC-400 is significantly enhanced compared to that observed in previous investigations, mainly performed using light ions. The observed non-linear behaviour implies that the dose at which luminescence starts deteriorating is not independent on particles' stopping power, thus illustrating that the radiation hardness of plastic scintillators can be strongly weakened under high excitation density in heavy ion environments.Comment: 5 figures, accepted in Nucl. Instrum. Methods

    Thickness-dependence of the electronic properties in V2O3 thin films

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    High quality vanadium sesquioxide V2O3 films (170-1100 {\AA}) were grown using the pulsed laser deposition technique on (0001)-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties were examined. X-ray diffraction indicates that there is an in-plane compressive lattice parameter (a), close to -3.5% with respect to the substrate and an out-of-plane tensile lattice parameter (c) . The thin film samples display metallic character between 2-300 K, and no metal-to-insulator transition is observed. At low temperature, the V2O3 films behave as a strongly correlated metal, and the resistivity (\rho) follows the equation \rho =\rho_0 + A T^2, where A is the transport coefficient in a Fermi liquid. Typical values of A have been calculated to be 0.14 \mu\Omega cm K^{-2}, which is in agreement with the coefficient reported for V2O3 single crystals under high pressure. Moreover, a strong temperature-dependence of the Hall resistance confirms the electronic correlations of these V2O3 thin films samples.Comment: 4 pages, 4 figure

    Absence of long-range Ni/Mn ordering in ferromagnetic La2NiMnO6 thin films

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    Epitaxial La2NiMnO6 thin films have been grown on (001)-oriented SrTiO3 using the PLD technique. The thin films are semiconducting and FM with a TC close to 270K, a coercive field of 920Oe, and a saturation magnetization of 5muB per f.u. TEM, conducted at RT, reveals a majority phase having "I-centered" structure with a=c=1.4asub and b=2asub along with a minority phase-domains having "P-type" structure (asub being the lattice parameter of the perovskite structure). A discusion on the presence of Ni/Mn long-range ordering, in light of recent literature on double perovskites La2NiMnO6 is presented.Comment: To be published in Applied Physics Letter

    Energy deposition by heavy ions: Additivity of kinetic and potential energy contributions in hillock formation on CaF2

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    The formation of nano-hillocks on CaF2 crystal surfaces by individual ion impact has been studied using medium energy (3 and 5 MeV) highly charged ions (Xe19+ to Xe30+) as well as swift (kinetic energies between 12 and 58 MeV) heavy ions. For very slow highly charged ions the appearance of hillocks is known to be linked to a threshold in potential energy while for swift heavy ions a minimum electronic energy loss is necessary. With our results we bridge the gap between these two extreme cases and demonstrate, that with increasing energy deposition via electronic energy loss the potential energy threshold for hillock production can be substantially lowered. Surprisingly, both mechanisms of energy deposition in the target surface seem to contribute in an additive way, as demonstrated when plotting the results in a phase diagram. We show that the inelastic thermal spike model, originally developed to describe such material modifications for swift heavy ions, can be extended to case where kinetic and potential energies are deposited into the surface.Comment: 12 pages, 4 figure

    Swift heavy ion-irradiated multi-phase calcium borosilicates: implications to molybdenum incorporation, microstructure, and network topology

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    Abstract: A series of calcium borosilicate glasses with varying [B2O3], [MoO3], and [CaO] were prepared and subjected to 92 MeV Xe ions used to simulate the damage from long-term α-decay in nuclear waste glasses. Modifications to the solubility of molybdenum, the microstructure of separated phases, and the Si–O–B network topology were investigated following five irradiation experiments that achieved doses between 5 × 1012 and 1.8 × 1014 Xe ions/cm2 in order to test the hypotheses of whether irradiation would induce, propagate, or anneal phase separation. Using electron microscopy, EDS analysis, Raman spectroscopy, and XRD, irradiation was observed to increase the integration of MoO42− by increasing the structural disorder within and between heterogeneous amorphous phases. This occurred through Si/B-O-Si/B bond breakage and reformation of boroxyl and 3/4-membered SiO4 rings. De-mixing of the Si–O–B network concurrently enabled cross directional Ca and Mo diffusion along defect created pathways, which were prevalent along the interface between phases. The initiation and extent of these changes was dependent primarily on the [SiO2]/[B2O3] ratio, with [MoO3] having a secondary effect on influencing the defect population with increasing dose. Microstructurally, these changes to bonding caused a reduction in heterogeneities between amorphous phases by reducing the size and increasing the spatial distribution of immiscible droplets. This general increase in structural disorder prevented crystallization in most cases, but where precipitation was initiated by radiation, it was re-amorphized with increasing dose. These outcomes suggest that internal radiation can alter phase separation tie lines, and can therefore be used as a tool to design certain structural environments for long-term encapsulation of radioisotopes
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