The effect of minority carrier mobility variations on the performance of high voltage silicon solar cells

A multistep diffusion processing schedule is described which allows the attainment of high open circuit voltages in 0.1 ohm/cm silicon cells. The schedule consists of a deep primary diffusion, followed by an acid etch of emmitter surface which is then followed by a shallow secondary diffusion. A correlation is made between the observed voltage increases and the time of primary diffusion. Results indicate that as the primary diffusion time increases, the voltage rises monotonically

Gallium arsenide solar cell efficiency: Problems and potential

Under ideal conditions the GaAs solar cell should be able to operate at an AMO efficiency exceeding 27 percent, whereas to date the best measured efficiencies barely exceed 19 percent. Of more concern is the fact that there has been no improvement in the past half decade, despite the expenditure of considerable effort. State-of-the-art GaAs efficiency is analyzed in an attempt to determine the feasibility of improving on the status quo. The possible gains to be had in the planar cell. An attempt is also made to predict the efficiency levels that could be achieved with a grating geometry. Both the N-base and the P-base BaAs cells in their planar configurations have the potential to operate at AMO efficiencies between 23 and 24 percent. For the former the enabling technology is essentially in hand, while for the latter the problem of passivating the emitter surface remains to be solved. In the dot grating configuration, P-base efficiencies approaching 26 percent are possible with minor improvements in existing technology. N-base grating cell efficiencies comparable to those predicted for the P-base cell are achievable if the N surface can be sufficiently passivated

The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cells

It is demonstrated that diffusion induced stresses in low resistivity silicon solar cells can significantly reduce both the open-circuit voltage and collection efficiency. The degradation mechanism involves stress induced changes in both the minority carrier mobility and the diffusion length. Thermal recovery characteristics indicate that the stresses are relieved at higher temperatures by divacancy flow (silicon self diffusion). The level of residual stress in as-fabricated cells was found to be negligible in the cells tested

The effect of minority carrier mobility variations on solar cell spectral response

Analysis of multistep diffused, high voltage 0.1 ohm-cm solar cells suggests that the increased voltage capability of these cells is correlated with localized variations in the base minority carrier mobility. An attempt to calculate the behavior of those cells revealed unexpected results. It is shown, contrary to what was expected, that spatial variations in the mobility effects severe changes in the short-circuit current and the spectral response. Variations in cell output as a result of imposing abrupt, linear, and exponential mobility variations are presented

Voltage controlling mechanisms in low resistivity silicon solar cells: A unified approach

An experimental technique capable of resolving the dark saturation current into its base and emitter components is used as the basis of an analysis in which the voltage limiting mechanisms were determined for a variety of high voltage, low resistivity silicon solar cells. The cells studied include the University of Florida hi-low emitter cell, the NASA and the COMSAT multi-step diffused cells, the Spire Corporation ion-implanted emitter cell, and the University of New South Wales MINMIS and MINP cells. The results proved to be, in general, at variance with prior expectations. Most surprising was the finding that the MINP and the MINMIS voltage improvements are due, to a considerable extent, to a previously unrecognized optimization of the base component of the saturation current. This result is substantiated by an independent analysis of the material used to fabricate these devices

Properties and characterization of ALD grown dielectric oxides for MIS structures

We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate the ALD growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the Metal-Insulator-Semiconductor structure. Our best devices survive energizing up to ~3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 \times 1013 cm-2, what promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.Comment: 8 pages, 5 figures, 14 reference

Poly(ADP-ribose)polymerase inhibition decreases angiogenesis

Inhibitors of poly(ADP-ribose)polymerase (PARP), a nuclear enzyme involved in regulating cell death and cellular responses to DNA repair, show considerable promise in the treatment of cancer both in monotherapy as well as in combination with chemotherapeutic agents and radiation. We have recently demonstrated that PARP inhibition with 3-aminobenzamide or PJ-34 reduced vascular endothelial growth factor (VEGF)-induced proliferation, migration, and tube formation of human umbilical vein endothelial cells (HUVECs) in vitro. Here, we show dose-dependent reduction of VEGF- and basic fibroblast growth factor (bFGF)-induced proliferation, migration, and tube formation of HUVECs in vitro by two potent PARP inhibitors 5-aminoisoquinolinone-hydrochloride (5-AIQ) and 1,5-isoquinolinediol (IQD). Moreover, PARP inhibitors prevented the sprouting of rat aortic ring explants in an ex vivo assay of angiogenesis. These results establish the novel concept that PARP inhibitors have antiangiogenic effects, which may have tremendous clinical implications for the treatment of various cancers, tumor metastases, and certain retinopathies

Pharmacological inhibition of poly(ADP-ribose) polymerase inhibits angiogenesis

Poly(ADP-ribose) polymerase (PARP) is a nuclear enzyme which plays an important role in regulating cell death and cellular responses to DNA repair. Pharmacological inhibitors of PARP are being considered as treatment for cancer both in monotherapy as well as in combination with chemotherapeutic agents and radiation, and were also reported to be protective against untoward effects exerted by certain anticancer drugs. Here we show that pharmacological inhibition of PARP with 3-aminobenzamide or PJ-34 dose-dependently reduces VEGF-induced proliferation, migration, and tube formation of human umbilical vein endothelial cells in vitro. These results suggest that treatment with PARP inhibitors may exert additional benefits in various cancers and retinopathies by decreasing angiogenesis

Numerical simulation of strongly nonlinear and dispersive waves using a Green-Naghdi model

We investigate here the ability of a Green-Naghdi model to reproduce strongly nonlinear and dispersive wave propagation. We test in particular the behavior of the new hybrid finite-volume and finite-difference splitting approach recently developed by the authors and collaborators on the challenging benchmark of waves propagating over a submerged bar. Such a configuration requires a model with very good dispersive properties, because of the high-order harmonics generated by topography-induced nonlinear interactions. We thus depart from the aforementioned work and choose to use a new Green-Naghdi system with improved frequency dispersion characteristics. The absence of dry areas also allows us to improve the treatment of the hyperbolic part of the equations. This leads to very satisfying results for the demanding benchmarks under consideration