Deep Level Saturation Spectroscopy

We review the “Deep Level Saturation Spectroscopy” (DLSS) as the nonlinear method to study the deep local defects in semiconductors. The essence of a method is determined by the processes of sufficiently strong laser modulation (up to saturation) of quasistationar two-step absorption of the probe light via deep levels (DLs). DLSS is based on nonequilibrium processes of the optically induced population changes for deep levels which lead to the changes in an impurity absorption. This method allows us the separation of the spectral contributions from different deep centers (even in the case of their full spectral overlap), on the basis of the difference of their optical activity (photon capture cross-sections) and of their electroactivity difference (carriers capture coefficients). As shown, DLSS is allowed to determine directly the main set of phenomenological parameters (cross-sections, concentration, bound energy, etc.) for deep local defects, their content and energy position in the band gap. Some important aspects of DLSS were shown also: the possibility to connect directly the measured data to the local centers which are participating in radiative recombination, and also the possibility to study directly the phonon relaxation processes in the localized states of deep defects

Chiral Diphosphine Ligands and New Reactions of Organozinc Compounds

Using the [2,3]-sigmatropic rearrangement of chiral allylic diarylphosphinites, a number of new enantiopure 1,3-diphoshine ligands were prepared. Enzymatic kinetic rezolution of allylic alcohols was used for the preparation of enantiopure starting materials. Several new reactions of organozinc compounds, i. e. new thiolation method, Ni-catalyzed cross-coupling reactions and a method of preparation of alkylzinc bromides from the corresponding alkylbromides were developed

Summarize the Past to Predict the Future: Natural Language Descriptions of Context Boost Multimodal Object Interaction

We study the task of object interaction anticipation in egocentric videos. Successful prediction of future actions and objects requires an understanding of the spatio-temporal context formed by past actions and object relationships. We propose TransFusion, a multimodal transformer-based architecture, that effectively makes use of the representational power of language by summarizing past actions concisely. TransFusion leverages pre-trained image captioning models and summarizes the caption, focusing on past actions and objects. This action context together with a single input frame is processed by a multimodal fusion module to forecast the next object interactions. Our model enables more efficient end-to-end learning by replacing dense video features with language representations, allowing us to benefit from knowledge encoded in large pre-trained models. Experiments on Ego4D and EPIC-KITCHENS-100 show the effectiveness of our multimodal fusion model and the benefits of using language-based context summaries. Our method outperforms state-of-the-art approaches by 40.4% in overall mAP on the Ego4D test set. We show the generality of TransFusion via experiments on EPIC-KITCHENS-100. Video and code are available at: https://eth-ait.github.io/transfusion-proj/

Modeling and simulation of polycrystalline ZnO thin-film transistors

Thin film transistors (TFTs) made of transparent channel semiconductors such as ZnO are of great technological importance, because their insensitivity to visible light makes device structures simple. In fact, several demonstrations are made on ZnO TFT achieving reasonably good field effect mobilities of 1-10 cm2/Vs, but reveal insufficient device performances probably due to the presence of dense grain boundaries. We have modeled grain boundaries in ZnO thin film transistors (TFTs) and performed device simulation using a two-dimensional device simulator for understanding the grain boundary effects on the device performance. Actual polycrystalline ZnO TFT modeling is commenced with considering a single grain boundary in the middle of the TFT channel formulating with a Gaussian defect distribution localized in the grain boundary. A double Shottky barrier is formed in the grain boundary and its barrier height are analyzed as functions of defect density and gate bias. The simulation is extended to the TFTs with many grain boundaries to quantitatively analyze the potential profiles developed along the channel. One of the big contrasts of polycrystalline ZnO TFT compared with a polycrystalline Si TFT is that much smaller nanoscaled grain size induces heavy overlap of double Shottky barriers. Through the simulation, we can estimate the total trap state density localized in the grain boundaries for a polycrystalline ZnO by knowing apparent mobility and grain size in the device.Comment: Submitted to Journal of Applied Physic

Surface passivation effect by fluorine plasma treatment on ZnO for efficiency and lifetime improvement of inverted polymer solar cells

Zinc oxide (ZnO) is an important material for polymer solar cells (PSCs) where the characteristics of the interface can dominate both the efficiency and lifetime of the device. In this work we study the effect of fluorine (SF6) plasma surface treatment of ZnO films on the performance of PSCs with an inverted structure. The interaction between fluorine species present in the SF6 plasma and the ZnO surface is also investigated in detail. We provide fundamental insights into the passivation effect of fluorine by analyzing our experimental results and theoretical calculations and we propose a mechanism according to which a fluorine atom substitutes an oxygen atom or occupies an oxygen vacancy site eliminating an electron trap while it may also attract hydrogen atoms thus favoring hydrogen doping. These multiple fluorine roles can reduce both the recombination losses and the electron extraction barrier at the ZnO/fullerene interface improving the selectivity of the cathode contact. Therefore, the fabricated devices using the fluorine plasma treated ZnO show high efficiency and stable characteristics, irrespective of the donor : acceptor combinations in the photoactive blend. Inverted polymer solar cells, consisting of the P3HT:PC71BM blend, exhibited increased lifetime and high power conversion efficiency (PCE) of 4.6%, while the ones with the PCDTBT:PC71BM blend exhibited a PCE of 6.9%. Our champion devices with the PTB7:PC71BM blends reached a high PCE of 8.0% and simultaneously showed exceptional environmental stability when using the fluorine passivated ZnO cathode interlayers

Avoiding ambient air and light induced degradation in high-efficiency polymer solar cells by the use of hydrogen-doped zinc oxide as electron extraction material

Polymer solar cells have undergone rapid development in recent years. Their limited stability to environmental influence and during illumination, however, still remains a major stumbling block to the commercial application of this technology. Several attempts have been made to address the instability issue, mostly concentrated on the insertion of charge transport interlayers in the device stack. Although zinc oxide (ZnO) is one of the most common electron transport materials in those cells, the presence of defects at the surface and grain boundaries significantly affects the efficiency and stability of the working devices. To address these issues, we herein employ hydrogen-doping of ZnO electron extraction material. It is found that devices based on photoactive layers composed of blends of poly(3-hexylthiophene) (P3HT) with electron acceptors possessing different energy levels, such as [6,6]-phenyl-C70butyric acid methyl ester (PC70BM) or indene-C60 bisadduct (IC60BA) essentially enhanced their photovoltaic performance when using the hydrogen-doped ZnO with maximum power conversion efficiency (PCE) reaching values of 4.62% and 6.65%, respectively, which are much higher than those of the cells with the pristine ZnO (3.08% and 4.51%). Most significantly, the degradation of non-encapsulated solar cells when exposed to ambient or under prolonged illumination is studied and it is found that devices based on un-doped ZnO showed poor environmental stability and significant photo-degradation while those using hydrogen-doped ZnO interlayers exhibited high long-term ambient stability and maintained nearly 80–90% of their initial PCE values after 40 h of 1.5 AM illumination. All mechanisms responsible for this enhanced stability are elucidated and corresponding models are proposed. This work successfully addresses and tackles the instability problem of polymer solar cells and the key findings pave the way for the upscaling of these and, perhaps, of related devices such as perovskite solar cells