16 research outputs found
Observations de structures à puits quantiques AlGaAs/GaAs par microscopie électronique sous incidence rasante (REM)
No full textMicroscopie electronique en transmission des coins de clivage application a l'etude du systeme GaAlAs/GaAs
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Characterisation of zinc diffusion induced disordering in GaAs/AlGaAs multiquantum well structures by transmission electron microscopy
No full textNatural and etched surfaces in para- and ferroelectric KTa (1-x)Nb(x) O3 : a study by scanning electron microscopy and X-ray topography
No full textSEM observations of zinc diffusion induced disordering in GaAs/AlGaAs multiquantum well structures
No full textCharacterization of impurety diffusion induced disordering in GaAs/AlGaAs multiquantum well structures, grown by molecular beam epitaxy, has been carried out by scanning electron microscopy
Characterization of GaAs/(GaAs)n(AlAs)m surface-emitting laser structures through reflectivity and high-resolution electron microscopy measurements
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Characterization of semi-conductor materials by WTEM and SIMS
No full textThe observation of a wedge-shaped semiconductor specimen by transmission electron microscopy (WTEM) is an interesting alternative to conventional TEM. Information on chemical composition, layer thickness down to atomic resolution, spatial extension of the interfaces can be obtained. Secondary ion mass spectrometry (SIMS) is a complementary technique used to gain information on impurity concentration present in the semiconductor material
