Microstructural characterization of the heat-affected zones in grade 92 steel welds: Double-pass and multipass welds

The microstructure in the heat affected zone (HAZ) of multipass welds typical of those used in power plant made from 9 wt.% chromium martensitic Grade 92 steel is complex. There is therefore a need for systematic microstructural investigations to define the different regions of the microstructure across the HAZ of Grade 92 steel welds manufactured using traditional arc welding processes in order to understand possible failure mechanisms after long term service. In this study, the microstructure in the HAZ of an as-fabricated two-pass bead-on-plate weld on a parent metal of Grade 92 steel has been systematically investigated and compared to a complex, multi-pass thick section weldment using an extensive range of electron and ion-microscopy based techniques. A dilatometer has been used to apply controlled thermal cycles to simulate the microstructures in distinctly different regions in a multi-pass HAZ using sequential thermal cycles. A wide range of microstructural properties in the simulated materials were characterised and compared with the experimental observations from the weld HAZ. It has been found that the microstructure in the HAZ can be categorized by a combination of sequential thermal cycles experienced by the different zones within the complex weld metal, using the terminology developed for these regions based on a simpler, single pass bead on plate weld, which have been systematically categorised as Complete Transformation (CT), Partial Transformation (PT) and Over Tempered (OT)

Modelling of Nb influence on phase transformation behaviours from austenite to ferrite in low carbon steels

In this paper, a new model has been developed to predict the phase transformation behaviours from austenite to ferrite in Nb-containing low carbon steels. The new model is based on some previous work and incorporates the effects of Nb on phase transformation behaviours, in order to make it applicable for Nb-containing steels. Dissolved Nb atoms segregated at prior austenite grain boundaries increase the critical energy for ferrite nucleation, and thus the ferrite nucleation rate is decreased. Dissolved Nb atoms also apply a solute drag effect to the moving transformation interface, and the ferrite grain growth rate is also decreased. The overall transformation kinetics is then calculated according to the classic Johnson–Mehl–Avrami–Kolmogorov (JMAK) theory. The new model predictions are quite consistent with experimental results for various steels during isothermal transformations or continuous cooling

Cadmium chloride assisted re-crystallisation of CdTe: The effect on the CdS window layer

© 2015 Materials Research Society. The cadmium chloride annealing treatment is an essential step in the manufacture of efficient thin film CdTe solar cells. In previous work we have shown that the primary effect of the treatment is to remove high densities of stacking faults from the as-deposited material. Use of density functional theory has shown that some of the higher energy stacking faults are hole traps. Removal of these defects dramatically improves cell efficiency. In this study we focus on the effect of the activation treatment on the underlying n-type cadmium sulphide layer. A range of techniques has been used to observe the changes to the microstructure as well as the chemical and crystallographic changes as a function of treatment parameters. Electrical tests that link the device performance with the micro-structural properties of the cells have also been undertaken. Techniques used include High Resolution Transmission Electron Microscopy (HRTEM) for subgrain analysis, EDX for chemical analysis and XPS and SIMS for composition-depth profiling. By studying the effect of increasing the treatment time and temperature, we will show that the cadmium sulphide layer depletes to the point of complete dissolution into the absorber layer. We will also show that chlorine penetrates and decorates the grain boundaries in the cadmium sulphide. In addition we will show that chlorine builds up at the heterojunction and concentrates in voids at the cadmium telluride/cadmium sulphide interface. A combination of these effects damages the electrical performance of the solar cell

The effect of a post-activation annealing treatment on thin film CdTe device performance

The cadmium chloride activation treatment of cadmium telluride solar cells is essential for producing high efficiency devices. The treatment has many effects but the most significant is the complete removal of stacking faults in the cadmium telluride grains and the diffusion of Chlorine along the grain boundaries of the device. Chlorine decorates all cadmium telluride and cadmium sulphide grain boundaries and also builds up along the CdTe/CdS junction. . This paper reveals that by annealing devices to temperatures of 400ºC to 480 ºC for times ranging from 30 to 600 seconds in moderate vacuum results in the re-appearance of stacking faults and the removal of Choline from the grain boundaries. STEM analysis confirms the re-appearance of the stacking faults and SIMS and EDX confirm the removal of chlorine from the grain boundaries. This directly corresponds to a lowering in cell efficiency. The study provides further evidence that CdCl2 diffusion and certain microstructural defects directly affect the performance of cadmium telluride photovoltaic devices

The effect of a post-activation annealing treatment on thin film cdte device performance

The cadmium chloride activation treatment of cadmium telluride solar cells is essential for producing high efficiency devices. The treatment has many effects but the most significant is the complete removal of stacking faults in the cadmium telluride grains and the diffusion of Chlorine along the grain boundaries of the device. Chlorine decorates all cadmium telluride and cadmium sulphide grain boundaries and also builds up along the CdTe/CdS junction. . This paper reveals that by annealing devices to temperatures of 400ºC to 480 ºC for times ranging from 30 to 600 seconds in moderate vacuum results in the re-appearance of stacking faults and the removal of Choline from the grain boundaries. STEM analysis confirms the re-appearance of the stacking faults and SIMS and EDX confirm the removal of chlorine from the grain boundaries. This directly corresponds to a lowering in cell efficiency. The study provides further evidence that CdCl2 diffusion and certain microstructural defects directly affect the performance of cadmium telluride photovoltaic devices