Probabilistic seismic hazard map for Bulgaria as a basis for a new building code

A seismic hazard map proposed as part of a new building code for Bulgaria is presented here on basis of the recommendations in EUROCODE 8. <P> Seismic source zones within an area of about 200 km around Bulgaria were constructed considering seismicity, neotectonic and geological development. The most time consuming work was to establish a homogeneous earthquake catalogue out of different catalogues. <P> The probabilistic seismic hazard assessment in terms of intensities is performed following Cornell (1968) with the program EQRISK (see McGuire, 1976), modified by us for use of intensities. To cope with the irregular isoseismals of the Vrancea intermediate depth earthquakes a special attenuation factor is introduced (Ardeleanu et al., 2005), using detailed macroseismic maps of three major earthquakes. <P> The final seismic hazard is the combination of both contributions, of zones with crustal earthquakes and of the Vrancea intermediate depth earthquakes zone. Calculations are done for recurrence periods of 95, 475 and 10 000 years

Graphene exfoliation in the presence of semiconducting polymers for improved film homogeneity and electrical performances

We report on the production of hybrid graphene/semiconducting polymer films in one step procedure by making use of ultrasound-assisted liquid-phase exfoliation of graphite powder in the presence of π-conjugated polymers, i.e. poly(3-hexylthiophene) (P3HT) or poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-alt-[1,2,5]thiadiazolo-[3,4-c]pyridine] (PCDTPT). The polymers were chosen in view of their different propensity to form crystalline structures, their decoration with alkyl chains that are known to possess high affinity for the basal plane of graphene, the energy levels of their frontier orbitals which are extremely similar to the work function of graphene, and their high electrical performance when integrated in field-effect transistors (FETs). The polymers act as a dispersion-stabilizing agent and prevent the re-aggregation of the exfoliated graphene flakes, ultimately enabling the production of homogeneous bi-component dispersions. The electrical characterization of few-layer graphene/PCDTPT hybrids, when integrated as active layer in bottom-contact bottom-gate FETs, revealed an increase of the field-effect mobility compared to the π-conjugated-based pristine devices, a result which can be attributed to the joint effect of the few-layer graphene sheets and semiconducting polymers improving the charge-transport in the channel of the field-effect transistor. In particular, few-layer graphene/PCDTPT films displayed a 30-fold increase of PCDTPT's mobility if compared to pristine polymer samples. Such findings represent a step forward towards the optimization of graphene exfoliation and processing into electronic devices, as well as towards improved electrical performance in organic-based field-effect transistors

Morphology and Electronic Properties of Electrochemically Exfoliated Graphene

Electrochemically exfoliated graphene (EEG) possesses optical and electronic properties that are markedly different from those of the more explored graphene oxide in both its pristine and reduced forms. EEG also holds a unique advantage compared to other graphenes produced by exfoliation in liquid media: it can be obtained in large quantities in a short time. However, an in-depth understanding of the structure–properties relationship of this material is still lacking. In this work, we report physicochemical characterization of EEG combined with an investigation of the electronic properties of this material carried out both at the single flake level and on the films. Additionally, we use for the first time microwave irradiation to reduce the EEG and demonstrate that the oxygen functionalities are not the bottleneck for charge transport in EEG, which is rather hindered by the presence of structural defects within the basal plane

Improving the electrical performance of solution processed oligothiophene thin-film transistors via structural similarity blending

Here we show that the blending of structurally similar oligothiophene molecules is an effective approach to improve the field-effect mobility and Ion/Ioff as compared to single component based transistors. The effect of addition of each component is studied extensively using a wide array of methods such as X-ray diffraction, ToF-SIMS, and ambient UPS correlated with the electrical characterization

Abscisic-acid in triazine-resistant and susceptible Poa annua

International audienc

Erdbeben in Deutschland 1993 Berichte der deutschen seismologischen Observatorien mit einem Katalog wichtiger Weltbeben

Available from TIB Hannover: ZB 3937(1993) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEDEGerman

Erdbeben in der Bundesrepublik Deutschland 1987 Berichte der seismologischen Observatorien in der Bundesrepublik Deutschland mit einem Katalog wichtiger Weltbeben

With 11 figs., 4 tabs.SIGLECopy held by FIZ Karlsruhe; available from UB/TIB Hannover / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman

Erdbeben in der Bundesrepublik Deutschland 1983 Berichte der seismologischen Observatorien in der Bundesrepublik Deutschland mit einem Katalog wichtiger Weltbeben

Copy held by FIZ Karlsruhe; available from UB/TIB Hannover / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEDEGerman

Erdbeben in Deutschland 1994 Berichte der deutschen seismologischen Observatorien mit einem Katalog wichtiger Weltbeben

Available from TIB Hannover: ZB 3937(1994) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEDEGerman