158 research outputs found
Application of the modified Dubinin-Astakhov equation for a better understanding of high-pressure hydrogen adsorption on activated carbons
International audienc
Application of the modified Dubinin-Astakhov equation for a better understanding of high-pressure hydrogen adsorption on activated carbons
International audienc
Study of coupled heat and water transfer in proton exchange membrane fuel cells by the way of internal measurements
Abstract. Measurements of electrode temperatures within a proton exchange membrane fuel cell were performed using platinum wires. A temperature difference of 7°C between the electrodes and the bipolar plates was observed for a cell operating at a current density of 1.5 A.cm -2 . These measurements show a strong non-uniformity of the temperature profile through membrane electrode assembly (MEA) that future phenomenological models must take into account. In addition, the simultaneous measurements of heat and water flux through the MEA leads to the conclusion that produced water crosses the diffusion layer in vapor phase. A very simple heat transfer model is proposed
Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature
The Hall resistivity rho_{xy} of a La_{2/3}(Ca,Pb)_{1/3}MnO_3 single crystal
has been measured as a function of temperature and field. The overall behavior
is similar to that observed previously in thin-films. At 5 K, rho_{xy} is
positive and linear in field, indicating that the anomalous contribution
is negligible. However, the effective carrier density in a free electron model
is n_{eff}=2.4 holes/Mn, even larger than the 0.85-1.9 holes/Mn reported for
thin-films and far larger than the 0.33 holes/Mn expected from the doping
level. As temperature increases, a strong, negative contribution to rho_{xy}
appears, that we ascribe to R_S. Using detailed magnetization data, we separate
the ordinary (\propto B) and anomalous (\propto M) contributions. Below T_C,
R_S \propto rho_{xx}, indicating that magnetic skew scattering is the dominant
mechanism in the metallic ferromagnetic regime. At and above the
resistivity-peak temperature, we find that rho_{xy}/rho_{xx}M is a constant,
independent of temperature and field. This implies that the anomalous Hall
coefficient is proportional to the magnetoresistance. A different explanation
based on two fluid model is also presented.Comment: revtex, 11 pages, 4 figure
Reaction of dialkyl carbonates with alcohols:Defining a scale of the best leaving and entering groups
A series of dialkyl and methyl alkyl carbonates has been synthesized and their reactivity investigated. The behavior of preferential leaving and entering groups for the newly synthesized carbonates has been accurately investigated. Both experimental and computational studies agreed that the scale of leaving groups follows the trend: PhCH2O–, MeO– ≥ EtO–, CH3(CH2)2O–, CH3(CH2)7O– > (CH3)2CHO– > (CH3)3CO–. Accordingly, the scale of the entering group has the same trend, with t-butoxide being the worst entering group. A preliminary attempt to rationalize the nucleofugality trends, limited to the (CH3)3CO– and CH3O– groups, has indicated that a likely origin of the observed trends lies in the different entropic contributions and solvation effects
Chirality driven anomalous Hall effect in weak coupling regime
Anomalous Hall effect arising from non-trivial spin configuration (chirality)
is studied based on the - model. Considering a weak coupling case, the
interaction is treated perturbatively. Scattering by normal impurities is
included. Chirality is shown to drive locally Hall current and leads to overall
Hall effect if there is a finite uniform chirality. This contribution is
independent of the conventional spin-orbit contribution and shows distinct low
temperature behavior. In mesoscopic spin glasses, chirality-induced anomalous
Hall effect is expected below the spin-glass transition temperature.
Measurement of Hall coefficient would be useful in experimentally confirming
the chirality ordering
Electronic transport in EuB
EuB is a magnetic semiconductor in which defects introduce charge
carriers into the conduction band with the Fermi energy varying with
temperature and magnetic field. We present experimental and theoretical work on
the electronic magnetotransport in single-crystalline EuB. Magnetization,
magnetoresistance and Hall effect data were recorded at temperatures between 2
and 300 K and in magnetic fields up to 5.5 T. The negative magnetoresistance is
well reproduced by a model in which the spin disorder scattering is reduced by
the applied magnetic field. The Hall effect can be separated into an ordinary
and an anomalous part. At 20 K the latter accounts for half of the observed
Hall voltage, and its importance decreases rapidly with increasing temperature.
As for Gd and its compounds, where the rare-earth ion adopts the same Hund's
rule ground state as Eu in EuB, the standard antisymmetric
scattering mechanisms underestimate the of this contribution by several
orders of magnitude, while reproducing its almost perfectly. Well below
the bulk ferromagnetic ordering at = 12.5 K, a two-band model
successfully describes the magnetotransport. Our description is consistent with
published de Haas van Alphen, optical reflectivity, angular-resolved
photoemission, and soft X-ray emission as well as absorption data, but requires
a new interpretation for the gap feature deduced from the latter two
experiments.Comment: 35 pages, 12 figures, submitted to PR
Charge Transport in Manganites: Hopping Conduction, the Anomalous Hall Effect and Universal Scaling
The low-temperature Hall resistivity \rho_{xy} of La_{2/3}A_{1/3}MnO_3 single
crystals (where A stands for Ca, Pb and Ca, or Sr) can be separated into
Ordinary and Anomalous contributions, giving rise to Ordinary and Anomalous
Hall effects, respectively. However, no such decomposition is possible near the
Curie temperature which, in these systems, is close to metal-to-insulator
transition. Rather, for all of these compounds and to a good approximation, the
\rho_{xy} data at various temperatures and magnetic fields collapse (up to an
overall scale), on to a single function of the reduced magnetization
m=M/M_{sat}, the extremum of this function lying at m~0.4. A new mechanism for
the Anomalous Hall Effect in the inelastic hopping regime, which reproduces
these scaling curves, is identified. This mechanism, which is an extension of
Holstein's model for the Ordinary Hall effect in the hopping regime, arises
from the combined effects of the double-exchange-induced quantal phase in
triads of Mn ions and spin-orbit interactions. We identify processes that lead
to the Anomalous Hall Effect for localized carriers and, along the way, analyze
issues of quantum interference in the presence of phonon-assisted hopping. Our
results suggest that, near the ferromagnet-to-paramagnet transition, it is
appropriate to describe transport in manganites in terms of carrier hopping
between states that are localized due to combined effect of magnetic and
non-magnetic disorder. We attribute the qualitative variations in resistivity
characteristics across manganite compounds to the differing strengths of their
carrier self-trapping, and conclude that both disorder-induced localization and
self-trapping effects are important for transport.Comment: 29 pages, 20 figure
Large Anomalous Hall effect in a silicon-based magnetic semiconductor
Magnetic semiconductors are attracting high interest because of their
potential use for spintronics, a new technology which merges electronics and
manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently
emerged as the most popular materials for this new technology. While Curie
temperatures are rising towards room temperature, these materials can only be
fabricated in thin film form, are heavily defective, and are not obviously
compatible with Si. We show here that it is productive to consider transition
metal monosilicides as potential alternatives. In particular, we report the
discovery that the bulk metallic magnets derived from doping the narrow gap
insulator FeSi with Co share the very high anomalous Hall conductance of
(GaMn)As, while displaying Curie temperatures as high as 53 K. Our work opens
up a new arena for spintronics, involving a bulk material based only on
transition metals and Si, and which we have proven to display a variety of
large magnetic field effects on easily measured electrical properties.Comment: 19 pages with 5 figure
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