Spin Effects in a Quantum Ring

Recent experiments are reviewed that explore the spin states of a ring-shaped many-electron quantum dot. Coulomb-blockade spectroscopy is used to access the spin degree of freedom. The Zeeman effect observed for states with successive electron number allows to select possible sequences of spin ground states of the ring. Spin-paired orbital levels can be identified by probing their response to magnetic fields normal to the plane of the ring and electric fields caused by suitable gate voltages. This narrows down the choice of ground-state spin sequences. A gate-controlled singlet--triplet transition is identified and the size of the exchange interaction matrix element is determined.Comment: 13 pages, 3 figures, Proceedings of the QD2004 conference in Banf

Signatures of dynamically polarized nuclear spins in all-electrical lateral spin transport devices

The effect of nuclear spins in Fe/GaAs all-electrical spin-injection devices is investigated. At temperatures below 50 K, strong modifications of the non-local spin signal are found that are characteristic for hyperfine coupling between conduction electrons and dynamically polarized nuclear spins. The perpendicular component of the nuclear Overhauser field depolarizes electron spins near zero in-plane external magnetic field, and can suppress such dephasing when antialigned with the external field, leading to satellite peaks in a Hanle measurement. The features observed agree well with a Monte Carlo simulation of the spin diffusion equation including hyperfine interaction, and are used to study the nuclear spin dynamics and relate it to the spin polarization of injected electrons.Comment: 6 pages, 4 figure

Spin-injection spectra of CoFe/GaAs contacts: dependence on Fe concentration, interface and annealing conditions

Spin injection from Co70Fe30 and Fe contacts into bulk GaAs(001) epilayers is studied experimentally. Using nonlocal measurements, the spin polarization of the differential conductance is determined as a function of the bias voltage applied across the injection interface. The spectra reveal an interface-related minority-spin peak at forward bias and a majority-spin peak at reverse bias, and are very similar, but shifted in energy, for Co70Fe30 and for Fe contacts. An increase of the spin-injection efficiency and a shift of the spectrum correlate with the Ga-to-As ratio at the interface between CoFe and GaAs.Comment: 4 pages, 4 figure

Regulation of nicotinic acetylcholine receptors by tyrosine kinases in the peripheral and central nervous system: same players, different roles

Abstract.: Nicotinic acetylcholine receptors (nAChRs) exist in many subtypes and are found in the peripheral and central nervous system where they mediate or modulate synaptic transmission. We review how tyrosine phosphorylation and kinases regulate muscle and neuronal nAChRs. Interestingly, although some of the same kinase players interact with the various receptor subtypes, the functional consequences are different. While concerted action of MuSK, Abl- and Src-family kinases (SFKs) regulates the synaptic distribution of nAChRs at the neuromuscular junction, SFKs activate heteromeric neuronal nAChRs in adrenal chromaffin cells, thereby enhancing catecholamine secretion. In contrast, the activity of homomeric neuronal nAChRs, as found in the hippocampus, is negatively regulated by tyrosine phosphorylation and SFKs. It appears that tyrosine kinases provide the means to regulate all nAChRs; but the functional consequences, even those caused by the same kinase family, are specific for each receptor subtype and locatio

Transport properties of quantum dots with hard walls

Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate steep walls at the confining edges and small lateral depletion lengths. The confinement is characterized by low-temperature magnetotransport measurements, from which the dots' energy spectrum is reconstructed. We find that in small dots, the addition spectrum can qualitatively be described within a Fock-Darwin model. For a quantitative analysis, however, a hard-wall confinement has to be considered. In large dots, the energy level spectrum deviates even qualitatively from a Fock-Darwin model. The maximum wall steepness achieved is of the order of 0.4 meV/nm.Comment: 9 pages, 5 figure

Temperature dependence of the nonlocal voltage in an Fe/GaAs electrical spin injection device

The nonlocal spin resistance is measured as a function of temperature in a Fe/GaAs spin-injection device. For nonannealed samples that show minority-spin injection, the spin resistance is observed up to room temperature and decays exponentially with temperature at a rate of 0.018\,K$^{-1}$. Post-growth annealing at 440\,K increases the spin signal at low temperatures, but the decay rate also increases to 0.030\,K$^{-1}$. From measurements of the diffusion constant and the spin lifetime in the GaAs channel, we conclude that sample annealing modifies the temperature dependence of the spin transfer efficiency at injection and detection contacts. Surprisingly, the spin transfer efficiency increases in samples that exhibit minority-spin injection.Comment: 10 pages, 4 figure

Atomic structure of Mn wires on Si(001) resolved by scanning tunneling microscopy

At submonolayer coverage, Mn forms atomic wires on the Si(001) surface oriented perpendicular to the underlying Si dimer rows. While many other elements form symmetric dimer wires at room temperature, we show that Mn wires have an asymmetric appearance and pin the Si dimers nearby. We find that an atomic configuration with a Mn trimer unit cell can explain these observations due to the interplay between the Si dimer buckling phase near the wire and the orientation of the Mn trimer. We study the resulting four wire configurations in detail using high-resolution scanning tunneling microscopy (STM) imaging and compare our findings with STM images simulated by density functional theory.Comment: 4 pages, 4 figure

Tunable effective g-factor in InAs nanowire quantum dots

We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown by chemical beam epitaxy. The values of the electron g-factors of the first few electrons entering the dot are found to strongly depend on dot size and range from close to the InAs bulk value in large dots |g^*|=13 down to |g^*|=2.3 for the smallest dots. These findings are discussed in view of a simple model.Comment: 4 pages, 3 figure